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ZHCSQM2 May 2022 AMC1333M10

PRODUCTION DATA

封裝選項

機械數據 (封裝 | 引腳)

DWV|8
- MPDS382B

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6.9 Electrical Characteristics

minimum and maximum specifications apply from T_A = –40°C to +125°C, AVDD = 3.0 V to 5.5 V, DVDD = 2.7 V to 5.5 V, INP = –1 V to +1 V, and INN = AGND = 0 V; typical specifications are at T_A = 25°C, AVDD = 5 V, DVDD = 3.3 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
ANALOG INPUT
R_IN	Single-ended input resistance	INN = AGND	0.1	2.4		G?
R_IND	Differential input resistance		0.1	3		G?
I_IB	Input bias current	INP = INN = AGND, I_IB = (I_INP + I_INN) / 2	–10	±3	10	nA
TCI_IB	Input bias current temperature drift			–7		pA/°C
I_IO	Input offset current	I_IO = I_INP – I_INN	–5	±1	5	nA
C_IN	Single-ended input capacitance	INN = AGND		2		pF
C_IND	Differential input capacitance			2		pF
CMTI	Common-mode transient immunity	\|AGND – DGND\| = 1 kV	100	150		kV/μs
CMRR	Common-mode rejection ratio	INP = INN, f_IN = 0 Hz, V_{CM min} ≤ V_CM ≤ V_{CM max}		–104		dB
CMRR	Common-mode rejection ratio	INP = INN, f_IN = 10 kHz, –0.5 V ≤ V_IN ≤ 0.5 V		–89		dB
PSRR	Power-supply rejection ratio	PSRR vs AVDD, at DC		–86		dB
PSRR	Power-supply rejection ratio	PSRR vs AVDD, 100-mV and 10-kHz ripple		–86		dB
DC ACCURACY
E_O	Offset error(1)(2)	INP = INN = AGND, T_A = 25°C	–0.5	±0.04	0.5	mV
TCE_O	Offset error temperature drift(3)		–4	±0.6	4	μV/°C
E_G	Gain error(2)	T_A = 25°C	–0.2%	±0.03%	0.2%
TCE_G	Gain error temperature drift(4)		–40	±20	40	ppm/°C
DNL	Differential nonlinearity	Resolution: 16 bits	–0.99		0.99	LSB
INL	Integral nonlinearity⁽³⁾	Resolution: 16 bits	–5	±1.6	5	LSB
AC ACCURACY
THD	Total harmonic distortion⁽⁶⁾	V_IN = 2 V_PP, f_IN = 1 kHz, single-ended input (AINN = AGND)		–91	–82	dB
DIGITAL OUTPUT (CMOS)
C_LOAD	Output load capacitance			15		pF
V_OH	High-level output voltage	I_OH = –20 μA	DVDD – 0.1			V
V_OH	High-level output voltage	I_OH = –4 m	DVDD – 0.4			V
V_OL	Low-level output voltage	I_OL = 20 μA			0.1	V
V_OL	Low-level output voltage	I_OL = 4 m			0.4	V
POWER SUPPLY
AVDD_UV	AVDD undervoltage detection threshold	AVDD rising	2.1		2.65	V
AVDD_UV	AVDD undervoltage detection threshold	AVDD falling	1.95		2.5	V
DVDD_UV	DVDD undervoltage detection threshold	DVDD rising	2.2	2.45	2.65	V
DVDD_UV	DVDD undervoltage detection threshold	DVDD falling	1.8		2.2	V
I_AVDD	High-side supply current	3 V ≤ AVDD ≤ 3.6 V		5.8	7.6	mA
I_AVDD	High-side supply current	4.5 V ≤ AVDD ≤ 5.5 V		6.4	8.4	mA
I_DVDD	Low-side supply current	2.7 V ≤ DVDD ≤ 3.6 V, C_LOAD = 15 pF		4	5.1	mA
I_DVDD	Low-side supply current	4.5 V ≤ DVDD ≤ 5.5 V, C_LOAD = 15 pF		4.4	5.8	mA

(1) This parameter is input referred.

(2) The typical value includes one sigma statistical variation.

(3) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.

(4) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCE_O = (E_O,MAX – E_O,MIN) / TempRange where E_O,MAX and E_O,MIN refer to the maximum and minimum E_O values measured within the temperature range (–40 to 125℃).

(5) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCE_G (ppm) = ((E_G,MAX - E_G,MIN) / TempRange) x 10⁴ where E_G,MAX and E_G,MIN refer to the maximum and minimum E_G values (in %) measured within the temperature range (–40 to 125℃).

(6) THD is the ratio of the rms sum of the amplitudes of first five higher harmonics to the amplitude of the fundamental.