TLC2201

正在供貨

低噪聲精密軌至軌輸出運(yùn)算放大器

可提供此產(chǎn)品的更新版本

功能與比較器件相同，且具有相同引腳
OPA196 正在供貨 具有多路復(fù)用器友好型輸入的單路、36V、低功耗通用放大器 Enhanced precision and wider bandwidth at lower power
OPA205 正在供貨 具有低輸入輔助電源電流和低噪聲的單路軌到軌、雙極精密 e-trim? 運(yùn)算放大器 Lower noise 7.2 (nV/√Hz) and lower power (0.22 mA). Upgraded AC and DC precision.

產(chǎn)品詳情

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.5 Offset drift (typ) (μV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/μs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.5 Offset drift (typ) (μV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/μs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Catalog Operating temperature range (°C) 0 to 70 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
PDIP (P) 8 92.5083 mm2 9.81 x 9.43 SOIC (D) 8 29.4 mm2 4.9 x 6
  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 μV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 μV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.
  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 μV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 μV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
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* 數(shù)據(jù)表 Advanced LinCMOS (TM) Low-Noise Precision Operational Amplifiers 數(shù)據(jù)表 (Rev. B) 2008年 1月 11日

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  • MSL 等級(jí)/回流焊峰值溫度
  • MTBF/時(shí)基故障估算
  • 材料成分
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  • 持續(xù)可靠性監(jiān)測(cè)
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