產品詳情

Protocols Analog Configuration 1:1 SPST Number of channels 2 Bandwidth (MHz) 20 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5 CON (typ) (pF) 12.5 OFF-state leakage current (max) (μA) 10 Ron (max) (mΩ) 20000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 2 Bandwidth (MHz) 20 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5 CON (typ) (pF) 12.5 OFF-state leakage current (max) (μA) 10 Ron (max) (mΩ) 20000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
SOIC (D) 8 29.4 mm2 4.9 x 6 TSSOP (PW) 8 19.2 mm2 3 x 6.4
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
下載 觀看帶字幕的視頻 視頻

您可能感興趣的相似產品

open-in-new 比較替代產品
功能與比較器件相同，且具有相同引腳
SN74CBT3306C 正在供貨 具有 –2V 下沖保護的 5V、1:1 (SPST)、2 通道 FET 總線開關（低電平有效） Supports I2C and UART

技術文檔

star =有關此產品的 TI 精選熱門文檔
未找到結果。請清除搜索并重試。
查看全部 16
類型 標題 下載最新的英語版本 日期
* 數據表 SN74CBTD3306C 數據表 (Rev. A) 2003年 10月 15日
應用手冊 選擇正確的德州儀器 (TI) 信號開關 (Rev. E) PDF | HTML 英語版 (Rev.E) PDF | HTML 2022年 8月 5日
應用手冊 CBT-C、CB3T 和 CB3Q 信號開關系列 (Rev. C) PDF | HTML 英語版 (Rev.C) PDF | HTML 2022年 3月 11日
應用手冊 多路復用器和信號開關詞匯表 (Rev. B) 英語版 (Rev.B) PDF | HTML 2022年 3月 11日
應用簡報 利用關斷保護信號開關消除電源時序 (Rev. C) 英語版 (Rev.C) PDF | HTML 2021年 10月 21日
選擇指南 Little Logic Guide 2018 (Rev. G) 2018年 7月 6日
選擇指南 Logic Guide (Rev. AB) 2017年 6月 12日
應用手冊 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
選擇指南 邏輯器件指南 2014 (Rev. AA) 最新英語版本 (Rev.AC) PDF | HTML 2014年 11月 17日
選擇指南 小尺寸邏輯器件指南 (Rev. E) 最新英語版本 (Rev.G) 2012年 7月 16日
用戶指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
更多文獻資料 Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
應用手冊 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
用戶指南 Signal Switch Data Book (Rev. A) 2003年 11月 14日
應用手冊 Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日
選擇指南 Logic Guide (Rev. AC) PDF | HTML 1994年 6月 1日

設計和開發

如需其他信息或資源，請點擊以下任一標題進入詳情頁面查看（如有）。

評估板

DIP-ADAPTER-EVM — DIP 適配器評估模塊

借助 DIP-Adapter-EVM 加快運算放大器的原型設計和測試，該 EVM 有助于快速輕松地連接小型表面貼裝 IC 并且價格低廉。您可以使用隨附的 Samtec 端子板連接任何受支持的運算放大器，或者將這些端子板直接連接至現有電路。

DIP-Adapter-EVM 套件支持六種常用的業界通用封裝，包括：

  • D 和 U (SOIC-8)
  • PW (TSSOP-8)
  • DGK（MSOP-8、VSSOP-8）
  • DBV（SOT23-6、SOT23-5 和 SOT23-3）
  • DCK（SC70-6 和 SC70-5）
  • DRL (SOT563-6)
用戶指南: PDF
TI.com 上無現貨
接口適配器

LEADED-ADAPTER1 — 表面貼裝轉 DIP 接頭適配器，用于快速測試 TI 的 5、8、10、16 和 24 引腳引線式封裝。

EVM-LEADED1 電路板可用于對 TI 的常見引線式封裝進行快速測試和電路板試驗。? 該電路板具有足夠的空間，可將 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面貼裝封裝轉換為 100mil DIP 接頭。?????

用戶指南: PDF
TI.com 上無現貨
仿真模型

HSPICE MODEL OF SN74CBTD3306C

SCEJ240.ZIP (94 KB) - HSpice Model
下載
仿真模型

SN74CBTD3306C IBIS Model

SCDM039.ZIP (14 KB) - IBIS Model
下載
封裝 引腳 CAD 符號、封裝和 3D 模型
SOIC (D) 8 Ultra Librarian
TSSOP (PW) 8 Ultra Librarian

訂購和質量

包含信息：
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續可靠性監測
包含信息：
  • 制造廠地點
  • 封裝廠地點

推薦產品可能包含與 TI 此產品相關的參數、評估模塊或參考設計。

支持和培訓

視頻