OPA659
- High Bandwidth: 650 MHz (G = 1 V/V)
- High Slew Rate: 2550 V/μs (4-V Step)
- Excellent THD: –78 dBc at 10 MHz
- Low Input Voltage Noise: 8.9 nV/√Hz
- Fast Overdrive Recovery: 8 ns
- Fast Settling time (1% 4-V Step): 8 ns
- Low Input Offset Voltage: ±1 mV
- Low Input Bias Current: ±10 pA
- High Output Current: 70 mA
The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.
The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.
The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.
Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.
Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.
技術(shù)文檔
| 類型 | 標(biāo)題 | 下載最新的英語版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | OPA659 Wideband, Unity-Gain Stable, JFET-Input Operational Amplifier 數(shù)據(jù)表 (Rev. C) | PDF | HTML | 2015年 11月 23日 |
訂購和質(zhì)量
- RoHS
- REACH
- 器件標(biāo)識
- 引腳鍍層/焊球材料
- MSL 等級/回流焊峰值溫度
- MTBF/時(shí)基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測
- 制造廠地點(diǎn)
- 封裝廠地點(diǎn)