產品詳情

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 15 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.35 Slew rate (typ) (V/μs) 0.11 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.043 Vn at 1 kHz (typ) (nV√Hz) 42 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (μV/°C) 1.3 Input bias current (max) (pA) 4 CMRR (typ) (dB) 83 Iout (typ) (A) 0.021 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.4 Input common mode headroom (to positive supply) (typ) (V) -1.9 Output swing headroom (to negative supply) (typ) (V) 0.004 Output swing headroom (to positive supply) (typ) (V) -0.013
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 15 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.35 Slew rate (typ) (V/μs) 0.11 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.043 Vn at 1 kHz (typ) (nV√Hz) 42 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (μV/°C) 1.3 Input bias current (max) (pA) 4 CMRR (typ) (dB) 83 Iout (typ) (A) 0.021 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.4 Input common mode headroom (to positive supply) (typ) (V) -1.9 Output swing headroom (to negative supply) (typ) (V) 0.004 Output swing headroom (to positive supply) (typ) (V) -0.013
SOIC (D) 8 29.4 mm2 4.9 x 6

Rail-to-rail output swing

  

Micropower operation (<0.5 mW)

  

Specified for 100 k and 5 k loads

  

High voltage gain

120 dB

Low input offset voltage

3 mV

Low offset voltage drift

1.3 μV/°C

Ultra low input bias current

2 fA

Input common-mode includes GND

  

Operating range from +5V to +15V

  

Low distortion

0.01% at 1 kHz

Slew rate

0.11 V/μs

Full military temperature range available

  

Rail-to-rail output swing

  

Micropower operation (<0.5 mW)

  

Specified for 100 k and 5 k loads

  

High voltage gain

120 dB

Low input offset voltage

3 mV

Low offset voltage drift

1.3 μV/°C

Ultra low input bias current

2 fA

Input common-mode includes GND

  

Operating range from +5V to +15V

  

Low distortion

0.01% at 1 kHz

Slew rate

0.11 V/μs

Full military temperature range available

  

The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.

The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.
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類型 標題 下載最新的英語版本 日期
* 數據表 LPC662 Low Power CMOS Dual Operational Amplifier 數據表 (Rev. B) 2004年 5月 1日

訂購和質量

包含信息：
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續可靠性監測
包含信息：
  • 制造廠地點
  • 封裝廠地點

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