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功能與比較器件相同，且具有相同引腳
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產品詳情

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 32 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 0.7 Slew rate (typ) (V/μs) 0.3 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.35 Vn at 1 kHz (typ) (nV√Hz) 40 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Offset drift (typ) (μV/°C) 7 Input bias current (max) (pA) 15000 CMRR (typ) (dB) 80 Iout (typ) (A) 0.03 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.005 Output swing headroom (to positive supply) (typ) (V) -2
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 32 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 0.7 Slew rate (typ) (V/μs) 0.3 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.35 Vn at 1 kHz (typ) (nV√Hz) 40 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125 Offset drift (typ) (μV/°C) 7 Input bias current (max) (pA) 15000 CMRR (typ) (dB) 80 Iout (typ) (A) 0.03 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.005 Output swing headroom (to positive supply) (typ) (V) -2
SOIC (D) 8 29.4 mm2 4.9 x 6
  • Controlled Baseline
    • One Assembly/One Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Wide Supply Range:
    • Single Supply . . . 3 V to 30 V
    • Dual Supplies . . .±1.5 V to ±15 V
  • Low Supply-Current Drain, Independent of Supply Voltage . . . 0.7 mA Typ
  • Common-Mode Input Voltage Range Includes Ground, Allowing Direct Sensing Near Ground
  • Low Input Bias and Offset Parameters:
    • Input Offset Voltage . . . 2 mV Typ
    • Input Offset Current . . . 2 nA Typ
    • Input Bias Current . . . 15 nA Typ
  • Differential Input Voltage Range Equal to Maximum-Rated Supply Voltage . . . 32 V
  • Open-Loop Differential Voltage Amplification . . . 100 V/mV Typ
  • Internal Frequency Compensation

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled Baseline
    • One Assembly/One Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Wide Supply Range:
    • Single Supply . . . 3 V to 30 V
    • Dual Supplies . . .±1.5 V to ±15 V
  • Low Supply-Current Drain, Independent of Supply Voltage . . . 0.7 mA Typ
  • Common-Mode Input Voltage Range Includes Ground, Allowing Direct Sensing Near Ground
  • Low Input Bias and Offset Parameters:
    • Input Offset Voltage . . . 2 mV Typ
    • Input Offset Current . . . 2 nA Typ
    • Input Bias Current . . . 15 nA Typ
  • Differential Input Voltage Range Equal to Maximum-Rated Supply Voltage . . . 32 V
  • Open-Loop Differential Voltage Amplification . . . 100 V/mV Typ
  • Internal Frequency Compensation

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The LM258A consists of two independent, high-gain, frequency-compensated operational amplifiers designed to operate from a single supply over a wide range of voltages. Operation from split supplies also is possible if the difference between the two supplies is 3 V to 30 V, and VCC is at least 1.5 V more positive than the input common-mode voltage. The low supply-current drain is independent of the magnitude of the supply voltage.

Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier circuits that now can be implemented more easily in single-supply-voltage systems. For example, this device can be operated directly from the standard 5-V supply used in digital systems and easily can provide the required interface electronics without additional ±5-V supplies.

The LM258A consists of two independent, high-gain, frequency-compensated operational amplifiers designed to operate from a single supply over a wide range of voltages. Operation from split supplies also is possible if the difference between the two supplies is 3 V to 30 V, and VCC is at least 1.5 V more positive than the input common-mode voltage. The low supply-current drain is independent of the magnitude of the supply voltage.

Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier circuits that now can be implemented more easily in single-supply-voltage systems. For example, this device can be operated directly from the standard 5-V supply used in digital systems and easily can provide the required interface electronics without additional ±5-V supplies.
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類型 標題 下載最新的英語版本 日期
* 數據表 LM258A-EP 數據表 2006年 10月 1日

訂購和質量

包含信息：
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續可靠性監測
包含信息：
  • 制造廠地點
  • 封裝廠地點

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