Abstract

This report presents the reliability and qualification results for the Texas Instruments DRV8351-SEP. The DRV8351-SEP device is three radiation tolerant half-bridge gate drivers capable of driving high-side and low-side N-channel power MOSFETs in SEP (Space Enhanced Plastic). The DRV8351-SEP is manufactured with a controlled baseline and has the following:

• One assembly and test site
• Product traceability
• An extended product life cycle