SLVK174 September 2024 TPS7H1121-SP
- 1
- TPS7H1121-SP Single-Event Effects (SEE)
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 Depth, Range, and LETEFF Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- A Total Ionizing Dose from SEE Experiments
- B References
5 Depth, Range, and LETEFF Calculation
![Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H1121-SP [Top] and Key Ion Parameters [Bottom]](/ods/images/SLVK174/GUID-20240812-SS0I-74M6-6FJY-US1KAIQ81OMK-low.svg "Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H1121-SP [Top] and Key Ion Parameters [Bottom]")
Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H1121-SP [Top] and Key Ion Parameters [Bottom]The TPS7H1121-SP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of 4 levels of standard thickness aluminum. The total stack height from the surface of the passivation to the silicon surface is 10.885-μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 70-mm air gap, and the BEOL stack over the TPS7H1121-SP, the effective LET (LETEFF) at the surface of the silicon substrate and the depth was determined with information provided by the MSU FRIB. The results are shown in Ion LETEFF, Depth, and Range in Silicon.
| ION TYPE | Beam Energy (MeV/nucleon) | ANGLE OF INCIDENCE | DEGRADER STEPS (#) | DEGRADER ANGLE | RANGE IN SILICON (μm) | LETEFF (MeV·cm2/mg) |
|---|---|---|---|---|---|---|
169Tm | 20.3 | 0 | 0 | 0 | 90 | 75 |
165Ho | 15 | 0 | 0 | 0 | 97.2 | 75 |