The ADC168M102R-SEP HDR exposure was performed on biased devices at TI CLAB facility in Dallas, Texas. The dose rate of the exposure was between 170-260 rad(Si)/s. After the exposure, the devices were electrically tested at TI testing facility. The electrical test guard-band limits were set within the data sheet electrical specifications to maintain a minimum Cpk and test error margin based on initial qualification and characterization data.

The ADC168M102R-SEP LDR exposure was performed on biased devices at Radiation Test Solutions, Inc. in Colorado Springs, CO. The dose rate of the exposure was between 10 mrad(Si)/s. After the exposure, the devices were electrically tested at TI testing facility. The electrical test guard-band limits were set within the data sheet electrical specifications to maintain a minimum Cpk and test error margin based on initial qualification and characterization data.