ZHCSDP3A December 2014 – May 2015 UCC27528-Q1
PRODUCTION DATA.
7 Specifications
7.1 Absolute Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage range | VDD | –0.3 | 20 | V |
| INA, INB, voltage(3) | –6.5 | 20 | V | |
| ENA, ENB voltage(3) | –0.3 | 20 | V | |
| OUTA, OUTB voltage | DC | –0.3 | VDD + 0.3 | V |
| Repetitive pulse < 200 ns(4) | –2 | VDD + 0.3 | ||
| Output continuous source and sink current | IOUT_DC | 0.3 | A | |
| Output pulsed source and sink current (0.5 µs) | IOUT_pulsed | 5 | A | |
| Operating virtual junction temperature, TJ | –40 | 150 | °C | |
| Lead temperature | Soldering, 10 s | 300 | °C | |
| Reflow | 260 | |||
| Storage temperature, Tstg | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See Packaging Section of the datasheet for thermal limitations and considerations of packages.
(3) The maximum voltage on the Input and Enable pins is not restricted by the voltage on the VDD pin.
(4) Values are verified by characterization on bench.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
| Charged-device model (CDM), per AEC Q100-011 | ±1000 | |||
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| VDD | Supply voltage | 4.5 | 12 | 18 | V | |
| Input voltage | INA, INB | –5 | 18 | V | ||
| Enable voltage | ENA and ENB | 0 | 18 | V | ||
| Operating junction temperature | –40 | 140 | °C | |||
7.4 Thermal Information
| THERMAL METRIC(1) | D | UNIT | |
|---|---|---|---|
| 8 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 128 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 77.7 | |
| RθJB | Junction-to-board thermal resistance | 68.5 | |
| ψJT | Junction-to-top characterization parameter | 20.7 | |
| ψJB | Junction-to-board characterization parameter | 68 | |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | |
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
7.5 Electrical Characteristics
VDD = 12 V, TA = TJ = –40 °C to 140 °C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified terminal (unless otherwise noted,)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| BIAS CURRENTS | |||||||
| IDD(off) | Startup current | VDD = 3.4 V, INA = VDD, INB = VDD | 55 | 125 | 225 | μA | |
| VDD = 3.4 V, INA = GND, INB = GND | 25 | 125 | 225 | ||||
| UNDERVOLTAGE LOCKOUT (UVLO) | |||||||
| VON | Supply start threshold | TJ = 25°C | 3.91 | 4.2 | 4.5 | V | |
| TJ = –40°C to 140°C | 3.75 | 4.2 | 4.65 | ||||
| VOFF | Minimum operating voltage after supply start | 3.6 | 3.9 | 4.4 | |||
| VDD_H | Supply voltage hysteresis | 0.2 | 0.3 | 0.5 | |||
| INPUTS (INA, INB) | |||||||
| VIN_H | Input signal high threshold | Output high for non-inverting input pins Output low for inverting input pins |
55 | 70 | %VDD | ||
| VIN_L | Input signal low threshold | Output low for non-inverting input pins Output high for inverting input pins |
30 | 38 | |||
| VIN_HYS | Input hysteresis | 17 | |||||
| ENABLE (ENA, ENB) | |||||||
| VEN_H | Enable signal high threshold | Output enabled | 1.7 | 1.9 | 2.1 | V | |
| VEN_L | Enable signal low threshold | Output disabled | 0.95 | 1.10 | 1.25 | ||
| VEN_HYS | Enable hysteresis | 0.7 | 0.8 | 1.1 | |||
| OUTPUTS (OUTA, OUTB) | |||||||
| ISNK/SRC | Sink and source peak current(1) | CLOAD = 0.22 µF, fSW = 1 kHz | ±5 | A | |||
| VDD–VOH | High output voltage | IOUT = –10 mA | 0.075 | V | |||
| VOL | Low output voltage | IOUT = 10 mA | 0.01 | ||||
| ROH | Output pullup resistance(2) | IOUT = –10 mA | 2.5 | 5 | 7.5 | Ω | |
| ROL | Output pulldown resistance | IOUT = 10 mA | 0.15 | 0.5 | 1 | Ω | |
(1) Ensured by design.
(2) ROH represents on-resistance of only the P-Channel MOSFET device in pullup structure of UCC27528-Q1 output stage.
7.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| tR | Rise time | CLOAD = 1.8 nF, VDD = 10 V | 7 | ns | ||
| tF | Fall time | CLOAD = 1.8 nF, VDD = 10 V | 6 | ns | ||
| tM | Delay matching between 2 channels | INA = INB, OUTA and OUTB at 50% transition point, VDD = 10 V | 1 | 4 | ns | |
| tPW | Minimum input pulse width that changes the output state | VDD = 10 V | 15 | ns | ||
| tD1, tD2 | Input to output propagation delay, See Figure 2. | CLOAD = 1.8 nF, 7-V input pulse, VDD = 10 V |
6 | 17 | 26 | ns |
| tD3, tD4 | EN to output propagation delay, See Figure 1 . |
CLOAD = 1.8 nF, 7-V enable pulse, VDD = 10 V | 6 | 13 | 23 | ns |
Figure 1. Enable Function (Non-Inverting Input Driver Operation)
Figure 2. Non-Inverting Input Driver Operation
7.7 Typical Characteristics
| VDD = 3.4 V | ||
| VDD = 12 V |
| VDD = 12 V |
| VDD = 12 V | IOUT = 10 mA |
| VDD = 10 V | CLOAD = 1.8 nF |
| VDD = 10 V |
| Both Channels Switching | CLOAD = 1.8 nF | |
| CLOAD = 1.8 nF |
| VDD = 4.5 V |
| VDD = 12 V | CLOAD = 500 pF | Both Channels Switching |
| fSW = 500 kHz | ||
| VDD = 12 V |
| VDD = 12 V | IOUT = 10 mA |
| VDD = 10 V | CLOAD = 1.8 nF |
| VDD = 10 V |
| CLOAD = 1.8 nF |
| CLOAD = 1.8 nF |