ZHCSBJ1B August 2013 – August 2015 UCC27517A-Q1
PRODUCTION DATA.
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage | VDD | –0.3 | 20 | V |
| OUT voltage | DC | –0.3 | VDD + 0.3 | V |
| Repetitive pulse less than 200 ns(5) | –2 | VDD + 0.3 | V | |
| Output continuous current | IOUT_DC (source/sink) | 0.3 | A | |
| Output pulsed current (0.5 µs) | IOUT_pulsed (source/sink) | 4 | A | |
| Input voltage | IN+, IN–(4) | –6 | 20 | V |
| Operating virtual junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, TSTG | –65 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2500 | V |
| Charged-device model (CDM), per AEC Q100-011 | ±1500 | |||
| MIN | NOM | MAX | UNIT | |
|---|---|---|---|---|
| Supply voltage, VDD | 4.5 | 12 | 18 | V |
| Operating ambient temperature | –40 | 140 | °C | |
| Input voltage, IN+ and IN– | 0 | 18 | V |
| THERMAL METRIC(1) | UCC27517A-Q1 | UNIT | |
|---|---|---|---|
| DBV (SOT-23) | |||
| 5 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 216 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 136.6 | °C/W |
| RθJB | Junction-to-board thermal resistance | 43.4 | °C/W |
| ψJT | Junction-to-top characterization parameter | 20.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 42.6 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
| PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| BIAS CURRENTS | |||||||
| IDD(off) | Startup current | VDD = 3.4 V | IN+ = VDD, IN– = GND | 40 | 100 | 160 | µA |
| IN+ = IN– = GND or IN+ = IN– = VDD |
25 | 75 | 145 | ||||
| IN+ = GND, IN– = VDD | 20 | 60 | 115 | ||||
| UNDER VOLTAGE LOCKOUT (UVLO) | |||||||
| VON | Supply start threshold | TA = 25°C | 3.91 | 4.20 | 4.5 | V | |
| TA = –40°C to 140°C | 3.70 | 4.20 | 4.65 | ||||
| VOFF | Minimum operating voltage after supply start | 3.45 | 3.9 | 4.35 | V | ||
| VDD_H | Supply voltage hysteresis | 0.2 | 0.3 | 0.5 | V | ||
| INPUTS (IN+, IN–) | |||||||
| VIN_H | Input signal high threshold | Output high for IN+ pin, Output low for IN– pin | 2.2 | 2.4 | V | ||
| VIN_L | Input signal low threshold | Output low for IN+ pin, Output high for IN– pin | 1 | 1.2 | V | ||
| VIN_HYS | Input signal hysteresis | 1 | V | ||||
| SOURCE/SINK CURRENT | |||||||
| ISRC/SNK | Source/sink peak current(1) | CLOAD = 0.22 µF, FSW = 1 kHz | ±4 | A | |||
| OUTPUTS (OUT) | |||||||
| VDD–VOH | High output voltage | VDD = 12 V, IOUT = –10 mA | 50 | 90 | mV | ||
| VDD = 4.5 V, IOUT = –10 mA | 60 | 130 | |||||
| VOL | Low output voltage | VDD = 12, IOUT = 10 mA | 5 | 10 | mV | ||
| VDD = 4.5 V, IOUT = 10 mA | 6 | 12 | |||||
| ROH | Output pullup resistance(1) | VDD = 12 V, IOUT = –10 mA | 5 | 7.5 | Ω | ||
| VDD = 4.5 V, IOUT = –10 mA | 5 | 11 | |||||
| ROL | Output pulldown resistance | VDD = 12 V, IOUT = 10 mA | 0.5 | 1 | Ω | ||
| VDD = 4.5 V, IOUT = 10 mA | 0.6 | 1.2 | |||||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| SWITCHING TIME | |||||||
| tR | Rise time(2) | VDD = 12 V, CLOAD = 1.8 nF | 8 | 12 | ns | ||
| VDD = 4.5 V, CLOAD = 1.8 nF | 16 | 22 | |||||
| tF | Fall time(2) | VDD = 12 V, CLOAD = 1.8 nF | 7 | 11 | ns | ||
| VDD=4.5V, CLOAD = 1.8 nF | 7 | 11 | |||||
| tD1 | IN+ to output propagation delay(2) | VDD = 12 V, 5-V input pulse, CLOAD = 1.8 nF |
4 | 13 | 23 | ns | |
| VDD = 4.5 V, 5-V input pulse, CLOAD = 1.8 nF |
4 | 15 | 26 | ||||
| tD2 | IN– to output propagation delay(2) | VDD = 12 V, CLOAD = 1.8 nF | 4 | 13 | 23 | ns | |
| VDD = 4.5 V, CLOAD = 1.8 nF | 4 | 19 | 30 | ||||