ZHCSM92A January 2021 – June 2021 UCC12051-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| INPUT SUPPLY | ||||||
| IVINQ | VINP quiescent current,disabled | EN=LOW | 100 | uA | ||
| IVINO | VINP operating current, no load | EN=HI; SEL shorted to VISO (5.0V output) | 52 | 80 | mA | |
| EN=HI; SEL 100kΩ to VISO (5.4V output) | 48 | 70 | ||||
| EN=HI; SEL shorted to GNDS (3.3V output) | 96 | 140 | ||||
| EN=HI; SEL 100kΩ to GNDS (3.7V output) | 82 | 120 | ||||
| IVIN_SC | DC current from VINP supplyunder short circuit on VISO | VISO short to GNDS | 245 | mA | ||
| VUVPR | VINP under-voltage lockout rising threshold | 4.25 | 4.45 | V | ||
| VUVPF | VINP under-voltage lockout falling threshold | 3.5 | 3.75 | V | ||
| VUVPH | VINP under-voltage lockout hysteresis | 0.5 | V | |||
| EN, SYNC INPUT PINS | ||||||
| VIR | Input voltage threshold, logic HIGH | Rising edge | 2.2 | V | ||
| VIF | Input voltage threshold, logic LOW | Falling edge | 0.8 | V | ||
| IEN | Enable Pin Input Current | VEN = 5.0 V | 5 | 10 | uA | |
| ISYNC | SYNC Pin Input Current | VSYNC = 5.0 V | 0.02 | 1 | uA | |
| SYNC_OK PIN | ||||||
| VOL | SYNC_OK output low voltage | ISYNC_OK = - 2 mA | 0.15 | V | ||
| ILKG_SYNC_OK | SYNC_OK pin leakage current | VSYNC_OK = 5.0 V | 1 | uA | ||
| DC/DC CONVERTER | ||||||
| VISO | Isolated supply output voltage | SEL shorted to VISO (5.0V output); IISO = 55 mA (3) | 4.8 | 5 | 5.2 | V |
| SEL 100kΩ to VISO (5.4 V output); IISO = 45 mA (3) | 5.18 | 5.4 | 5.62 | V | ||
| SEL shorted to GNDS (3.3V output); IISO = 100 mA (3) | 3.17 | 3.3 | 3.43 | V | ||
| SEL 100kΩ to GNDS (3.7 V output); IISO = 90 mA (3) | 3.55 | 3.7 | 3.85 | V | ||
| VISO(RIP) | Voltage ripple on isolated supply output (pk-pk)(1) | 20-MHz bandwidth, CLOAD = 10 uF || 0.1 uF, SEL shorted to VISO (5.0V output); IISO = 100 mA | 50 | mV | ||
| 20-MHz bandwidth, CLOAD = 10 uF || 0.1 uF, SEL 100k? to VISO (5.4V output); IISO = 90 mA | 50 | mV | ||||
| 20-MHz bandwidth, CLOAD = 10 uF || 0.1 uF, SEL shorted to GNDS (3.3V output); IISO = 145 mA | 50 | mV | ||||
| 20-MHz bandwidth, CLOAD = 10 uF || 0.1 uF, SEL shorted to GNDS (3.7V output); IISO = 130 mA | 50 | mV | ||||
| VISO(LINE) | VISO DC line regulation | SEL shorted to VISO (5.0 V output); IISO = 55 mA, VINP = 4.5 V to 5.5 V | 1% | |||
| SEL shorted to GNDS (3.3 V output); IISO = 100 mA, VINP = 4.5 V to 5.5 V | 1% | |||||
| VISO(LOAD) | VISO DC load regulation | SEL shorted to VISO (5.0 V output); IISO = 0 to 100 mA | 1.5% | |||
| SEL shorted to GNDS (3.3 V output); IISO = 0 to 145 mA | 1.5% | |||||
| EFF | Efficiency at maximum recommended load (2) | SEL shorted to VISO (5.0 V output); IISO = 100 mA | 60% | |||
| SEL 100kΩ to VISO (5.4V output); IISO = 90 mA | 60% | |||||
| SEL shorted to GNDS (3.3V output); IISO = 145 mA | 50% | |||||
| SEL 100kΩ to GNDS (3.7V output); IISO = 130 mA | 53% | |||||
| tRISE | VISO rise time, 10% - 90% | EN = change from LO to HI, SEL shorted to VISO (5.0V output); IISO = 1 mA | 750 | 1000 | μs | |
| EN = change from LO to HI, SEL 100kΩ to GNDS (3.3V output); IISO = 1 mA | 300 | 500 | μs | |||
| THERMAL SHUTDOWN | ||||||
| TSDTHR | Thermal shutdown threshold(1) | Junction Temperature, Rising | 165 | °C | ||
| TSDHYST | Thermal shutdown hysteresis(1) | Junction Temperature, Falling | 27 | °C | ||