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ZHCS363L August 2011 – March 2017 TRF7970A

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RHB|32
- MPQF130D

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

RHB|32
- QFND029X

訂購(gòu)信息

5.4 Electrical Characteristics

TYP operating conditions are T_A = 25°C, VIN = 5 V, full-power mode (unless otherwise noted)
MIN and MAX operating conditions are over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_OL	Low-level output voltage			0.2 × V_{DD_I/O}		V
V_OH	High-level output voltage			0.8 × V_{DD_I/O}		V
I_PD1	Supply current in power down mode 1	All building blocks disabled, including supply-voltage regulators; measured after 500-ms settling time (EN = 0, EN2 = 0)		0.5	5	µA
I_PD2	Supply current in power down mode 2 (sleep mode)	The SYS_CLK generator and V_{DD_X} remain active to support external circuitry; measured after 100-ms settling time (EN = 0, EN2 = 1)		120	200	µA
I_STBY	Supply current in stand-by mode	Oscillator running, supply-voltage regulators in low-consumption mode (EN = 1, EN2 = x)		1.9	3.5	mA
I_ON1	Supply current without antenna driver current	Oscillator, regulators, RX and AGC active, TX is off		10.5	14	mA
I_ON2	Supply current, TX (half power)	Oscillator, regulators, RX and AGC and TX active, P_OUT = 100 mW		70	78	mA
I_ON3	Supply current, TX (full power)	Oscillator, regulators, RX and AGC and TX active, P_OUT = 200 mW		130	150	mA
V_POR	Power-on-reset voltage	Input voltage at V_IN	1.4	2	2.6	V
V_BG	Bandgap voltage (pin 11)	Internal analog reference voltage	1.5	1.6	1.7	V
V_{DD_A}	Regulated output voltage for analog circuitry (pin 1)	V_IN = 5 V	3.1	3.4	3.8	V
V_{DD_X}	Regulated supply for external circuitry	Output voltage pin 32, V_IN = 5 V	3.1	3.4	3.8	V
I_{VDD_Xmax}	Maximum output current of V_{DD_X}	Output current pin 32, V_IN = 5 V			20	mA
R_RFOUT	Antenna driver output resistance ⁽³⁾	Half-power mode, V_IN = 2.7 V to 5.5 V		8	12	Ω
R_RFOUT	Antenna driver output resistance ⁽³⁾	Full-power mode, V_IN = 2.7 V to 5.5 V		4	6	Ω
R_RFIN	RX_IN1 and RX_IN2 input resistance		4	10	20	kΩ
V_{RF_INmax}	Maximum RF input voltage at RX_IN1 and RX_IN2	V_{RF_INmax} should not exceed V_IN		3.5		V_pp
V_{RF_INmin}	Minimum RF input voltage at RX_IN1 and RX_IN2 (input sensitivity)⁽¹⁾	f_SUBCARRIER = 424 kHz		1.4	2.5	mV_pp
V_{RF_INmin}		f_SUBCARRIER = 848 kHz		2.1	3	mV_pp
f_{SYS_CLK}	SYS_CLK frequency	In power mode 2, EN = 0, EN2 = 1	25	60	120	kHz
f_C	Carrier frequency	Defined by external crystal		13.56		MHz
t_CRYSTAL	Crystal run-in time	Time until oscillator stable bit is set (register 0x0F)⁽²⁾		3		ms
f_{D_CLKmax}	Maximum DATA_CLK frequency (1)	Depends on capacitive load on the I/O lines, TI recommends 2 MHz⁽¹⁾	2	4	10	MHz
R_OUT	Output resistance I/O_0 to I/O_7			500	800	Ω
R_{SYS_CLK}	Output resistance R_{SYS_CLK}			200	400	Ω

(1) Measured with subcarrier signal at RX_IN1 or RX_IN2 and measured the digital output at MOD pin with register 0x1A bit 6 = 1.

(2) Depends on the crystal parameters and components

(3) Antenna driver output resistance