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ZHCS447C SEPTEMBER 2011 – April 2018 TPS84210

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

RKG|39
- MPQF254D

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

RKG|39
- QFND291C

訂購信息

6.4 Electrical Characteristics

Over -40°C to 85°C free-air temperature, VIN = 3.3 V, V_OUT = 1.8 V, I_OUT = 2 A,
C_IN1 = 47 µF ceramic, C_IN2 = 220 µF poly-tantalum, C_OUT1 = 47 µF ceramic, C_OUT2 = 100 µF poly-tantalum (unless otherwise noted)

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
I_OUT	Output current	T_A = 85°C, natural convection			0		2	A
VIN	Input voltage range	Over I_OUT range			2.95⁽¹⁾		6	V
UVLO	VIN Undervoltage lockout	VIN = increasing				3.05	3.135	V
UVLO	VIN Undervoltage lockout	VIN = decreasing			2.5	2.75		V
V_OUT(adj)	Output voltage adjust range	Over I_OUT range			0.8		3.6	V
V_OUT	Set-point voltage tolerance	T_A = 25°C, I_OUT = 0A					±1.0% ⁽²⁾
	Temperature variation	-40°C ≤ T_A ≤ +85°C, I_OUT = 0A				±0.3%
	Line regulation	Over VIN range, T_A = 25°C, I_OUT = 0A				±0.1%
	Load regulation	Over I_OUT range, T_A = 25°C				±0.1%
	Total output voltage variation	Includes set-point, line, load, and temperature variation					±1.5% ⁽²⁾
η	Efficiency	VIN = 5 V I_O = 1 A	V_OUT = 3.3V, f_SW = 1.5 MHz			95%
			V_OUT = 2.5V, f_SW = 1.5 MHz			93%
			V_OUT = 1.8V, f_SW = 1 MHz			92%
			V_OUT = 1.5V, f_SW = 1 MHz			91%
			V_OUT = 1.2V, f_SW =750 kHz			90%
			V_OUT = 1.0V, f_SW = 650 kHz			88%
			V_OUT = 0.8V, f_SW = 650 kHz			87%
		VIN = 3.3V I_O = 1 A	V_OUT = 1.8V, f_SW = 1 MHz			93%
			V_OUT = 1.5V, f_SW = 1 MHz			92%
			V_OUT = 1.2V, f_SW = 750 kHz			91%
			V_OUT = 1.0V, f_SW = 650 kHz			89%
			V_OUT = 0.8V, f_SW = 650 kHz			87%
V_OUT ripple	Output voltage ripple	20-MHz bandwith				9		mV_PP
I_LIM	Overcurrent threshold					3.5		A
	Transient response	1.0 A/µs load step from 0.5A to 1.5A		Recovery time		80		µs
	Transient response	1.0 A/µs load step from 0.5A to 1.5A		V_OUT over/undershoot		45		mV
V_INH-H	Inhibit Control	Inhibit High Voltage				1.25	Open ⁽³⁾	V
V_INH-L	Inhibit Control	Inhibit Low Voltage			–0.3		1.0	V
I_I(stby)	Input standby current	INH pin to AGND				70	100	µA
Power Good	PWRGD Thresholds	V_OUT rising		Good		93%
		V_OUT rising		Fault		107%
		V_OUT falling		Fault		91%
		V_OUT falling		Good		105%
	PWRGD Low Voltage	I(PWRGD) = 0.33 mA					0.3	V
	Thermal Shutdown	Shutdown Temperature				175		°C
	Thermal Shutdown	Hysteresis				15		°C
C_IN	External input capacitance	Ceramic			47 ⁽⁵⁾			µF
C_IN	External input capacitance	Non-ceramic				220⁽⁵⁾		µF
C_OUT	External output capacitance	Ceramic			47 ⁽⁶⁾	150	650⁽⁷⁾	µF
		Non-ceramic				100⁽⁶⁾	1000⁽⁷⁾	µF
		Equivalent series resistance (ESR)					25	mΩ

(1) The minimum VIN depends on VOUT and the switching frequency. Please refer to Table 7 for operating limits.

(2) The stated limit of the set-point voltage tolerance includes the tolerance of both the internal voltage reference and the internal adjustment resistor. The overall output voltage tolerance will be affected by the tolerance of the external R_SET resistor.

(3) This control pin has an internal pullup. Do not place an external pull-up resistor on this pin. If this pin is left open circuit, the device operates when input power is applied. A small low-leakage MOSFET is recommended for control. See the application section for further guidance.

(4) The maximum synchronization clock pulse width is dependant on VIN, V_OUT, and the synchronization frequency. See the Synchronization (CLK) section for more information.

(5) A minimum of 47µF of ceramic capacitance is required across the input for proper operation. Locate the capacitor close to the device. An additional 220µF of bulk capacitance is recommended. See Table 5 for more details.

(6) The amount of required output capacitance varies depending on the output voltage (see Table 3 ). The amount of required capacitance must include at least 47µF of ceramic capacitance. Locate the capacitance close to the device. Adding additional capacitance close to the load improves the response of the regulator to load transients. See Table 3 and Table 5 for more details.

(7) When using both ceramic and non-ceramic output capacitance, the combined maximum must not exceed 1200µF.