ZHCSOH8F July 2021 – August 2024 TPS7H5001-SP , TPS7H5002-SP , TPS7H5003-SP , TPS7H5004-SP
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Device Comparison Table
- 5 Device Options
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 Recommended Operating Conditions
- 7.4 Thermal Information
- 7.5 Electrical Characteristics: All Devices
- 7.6 Electrical Characteristics: TPS7H5001-SP
- 7.7 Electrical Characteristics: TPS7H5002-SP
- 7.8 Electrical Characteristics: TPS7H5003-SP
- 7.9 Electrical Characteristics: TPS7H5004-SP
- 7.10 Typical Characteristics
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 VIN and VLDO
- 8.3.2 Start-Up
- 8.3.3 Enable and Undervoltage Lockout (UVLO)
- 8.3.4 Voltage Reference
- 8.3.5 Error Amplifier
- 8.3.6 Output Voltage Programming
- 8.3.7 Soft Start (SS)
- 8.3.8 Switching Frequency and External Synchronization
- 8.3.9 Primary Switching Outputs (OUTA/OUTB)
- 8.3.10 Synchronous Rectifier Outputs (SRA and SRB)
- 8.3.11 Dead Time and Leading Edge Blank Time Programmability (PS, SP, and LEB)
- 8.3.12 Pulse Skipping
- 8.3.13 Duty Cycle Programmability
- 8.3.14 Current Sense and PWM Generation (CS_ILIM)
- 8.3.15 Hiccup Mode Operation (HICC)
- 8.3.16 External Fault Protection (FAULT)
- 8.3.17 Slope Compensation (RSC)
- 8.3.18 Frequency Compensation
- 8.3.19 Thermal Shutdown
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Switching Frequency
- 9.2.2.2 Output Voltage Programming Resistors
- 9.2.2.3 Dead Time
- 9.2.2.4 Leading Edge Blank Time
- 9.2.2.5 Soft-Start Capacitor
- 9.2.2.6 Transformer
- 9.2.2.7 Main Switching FETs
- 9.2.2.8 Synchronous Rectificier FETs
- 9.2.2.9 RCD Clamp
- 9.2.2.10 Output Inductor
- 9.2.2.11 Output Capacitance and Filter
- 9.2.2.12 Sense Resistor
- 9.2.2.13 Hiccup Capacitor
- 9.2.2.14 Frequency Compensation Components
- 9.2.2.15 Slope Compensation Resistor
- 9.2.3 Application Curves
- 9.3 Power Supply Recommendations
- 9.4 Layout
- 10Device and Documentation Support
- 11Revision History
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- HFT|22
- KGD|0
- PW|24
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
9.2.2.8 Synchronous Rectificier FETs
The maximum voltage stress that will be seen by the synchronous rectifier switch on the secondary side can be calculated using Equation 55.
Note that the maximum expected voltage is approximately 20 V, but a higher rating should be selected to allow for transient spikes. For the design, an 80-V rated GaN FET was conservatively chosen for the synchronous rectifier. The current rating should be sufficient to handle the maximum secondary current as calculated in Section 9.2.2.6. In order to reduce the current through GaN FET during the soft-start period, when the controller SRA and SRB signals are off, a Schottky diode can be used in parallel with the synchronous rectifier GaN FETs. This diode would also mitigate the reverse conduction losses attributed to the GaN FET during the dead time and boost the overall efficiency of the system.