ZHCST52A September 2023 – November 2023 TPS7B4256-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| IQ | Quiescent current | VIN = 5.4 V to 40 V, VADJ/EN = 5 V, IOUT = 100 μA, TJ = 25oC | 50 | 60 | μA | |
| VIN = 5.4 V to 40 V, VADJ/EN = 5 V, IOUT = 100 μA, –40oC < TJ < 85oC | 65 | |||||
| VIN = 5.4 V to 40 V, VADJ/EN = 5 V, IOUT = 100 μA | 70 | |||||
| IGND | Ground current | VIN = 5.4 V to 40 V, VADJ/EN = 5 V, IOUT = 70 mA | 1 | mA | ||
| ISHUTDOWN | Shutdown supply current | VEN = 0 V | 3.5 | μA | ||
| IADJ/EN | ADJ/EN pin current | IOUT = 100 μA to 70 mA | 0.9 | μA | ||
| VUVLO(RISING) | Rising input supply UVLO | VIN rising, IOUT = 5 mA | 2.6 | 2.7 | 2.85 | V |
| VUVLO(FALLING) | Falling input supply UVLO | VIN falling, IOUT = 5 mA | 2.3 | 2.4 | 2.5 | V |
| VUVLO(HYST) | VUVLO(IN) hysteresis | 300 | mV | |||
| VIL | Enable logic input low level | 0.8 | V | |||
| VIH | Enable logic input high level | 1.8 | V | |||
| VOUT | Regulated output | VIN = VOUT + 400 mV to 40 V, IOUT = 100 μA to 70 mA | –6 | 6 | mV | |
| ΔVOUT(ΔVIN) | Line regulation | VIN = VOUT + 400 mV to 40 V, IOUT = 100 μA | –0.4 | 0.4 | mV | |
| ΔVOUT(ΔIOUT) | Load regulation | VIN = VOUT + 400 mV, IOUT = 100 μA to 70 mA (1) | –0.5 | 0.5 | mV | |
| VDO | Dropout voltage | IOUT = 70 mA, VADJ/EN ≥ 3.3 V, VIN = VADJ/EN | 130 | 225 | mV | |
| ICL | Output current limit | VIN = VOUT + 1 V, VOUT short to 90% x VADJ/EN | 85 | 105 | 125 | mA |
| PSRR | Power-supply ripple rejection | VRIPPLE = 1 VPP, frequency = 100 Hz, IOUT ≥ 5 mA | 80 | dB | ||
| Vn | Output noise voltage | VOUT = 3.3 V, IOUT = 1 mA, a 5 μVRMS reference is used for this measurement | 150 | μVRMS | ||
| IREV | Reverse current at VIN | VIN = 0 V, VOUT = 32 V, VADJ/EN = 5 V | –0.6 | 0.6 | μA | |
| IREV-N1 | Reverse current at negative VIN | VIN = –20 V, VOUT = 20 V, VADJ/EN = 5 V | –1.1 | 1.1 | μA | |
| IREV-N2 | Reverse current at negative VIN | VIN = –20 V, VOUT = 0 V, VADJ/EN = 5 V | –0.6 | 0.6 | μA | |
| IFB | Feedback pin current | 0.1 | 0.25 | μA | ||
| TJ | Junction temperature | –40 | 150 | °C | ||
| TSD(SHUTDOWN) | Junction shutdown temperature | 175 | °C | |||
| TSD(HYST) | Hysteresis of thermal shutdown | 15 | °C | |||