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ZHCSGH9 June 2017 TPS7A90

PRODUCTION DATA.

封裝選項

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range and all voltages with respect to GND (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage	IN, PG, EN	–0.3	7.0	V
	IN, PG, EN (5% duty cycle, pulse duration ≤ 200 µs)	–0.3	7.5
	OUT	–0.3	V_IN + 0.3
	SS_CTRL	–0.3	V_IN + 0.3
	NR/SS, FB	–0.3	3.6
Current	OUT	Internally limited		A
Current	PG (sink current into the device)		5	mA
Temperature	Operating junction, T_J	–55	150	°C
Temperature	Storage, T_stg	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input supply voltage range	1.4	6.5	V
V_OUT	Output voltage range	0.8	5.7	V
I_OUT	Output current	0	0.5	A
C_IN	Input capacitor	10		µF
C_OUT	Output capacitor	10		µF
C_NR/SS	Noise-reduction capacitor	0	10	µF
C_FF	Feedforward capacitor	0	100	nF
R_PG	Power-good pullup resistance	10	100	kΩ
T_J	Junction temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS7A90	UNIT
		DSK (SON)
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	56.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	46.3	°C/W
R_θJB	Junction-to-board thermal resistance	29.1	°C/W
ψ_JT	Junction-to-top characterization parameter	0.8	°C/W
ψ_JB	Junction-to-board characterization parameter	29.4	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	3.2	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating temperature range (T_J = –40°C to +125°C), 1.4 V ≤ V_IN ≤ 6.5 V, V_OUT(NOM) = 0.8 V, I_OUT = 5 mA, V_EN = 1.4 V, C_IN = C_OUT = 10 μF, C_NR/SS = C_FF = 0 nF, SS_CTRL = GND, and PG pin pulled up to V_IN with 100 kΩ (unless otherwise noted); typical values are at T_J = 25°C

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_IN	Input supply voltage range		1.4		6.5	V
V_REF	Reference voltage			0.8		V
V_UVLO	Input supply UVLO	V_IN rising		1.31	1.39	V
V_HYS(UVLO)	Input supply UVLO hysteresis			290		mV
V_OUT	Output voltage range		0.8		5.7	V
V_OUT	Output voltage accuracy⁽¹⁾	1.4 V ≤ V_IN ≤ 6.5 V, 5 mA ≤ I_OUT ≤ 0.5 A	–1.0%		1.0%
ΔV_OUT(ΔVIN)	Line regulation			0.005		%/V
ΔV_OUT(ΔIOUT)	Load regulation⁽²⁾	5 mA ≤ I_OUT ≤ 0.5 A		0.02		%/A
V_DO	Dropout voltage	1.4 V ≤ V_IN ≤ 5.0 V, I_OUT = 0.5 A, V_FB = 0.8 V – 3%			100	mV
V_DO	Dropout voltage	5.0 V < V_IN ≤ 5.7 V, I_OUT = 0.5 A, V_FB = 0.8 V – 3%			200	mV
I_LIM	Output current limit	V_OUT forced at 0.9 × V_OUT(NOM), V_IN = V_OUT(NOM) + 300 mV	0.8	1.1	1.5	A
I_GND	GND pin current	V_IN = 6.5 V, I_OUT = 5 mA		2.1	3.5	mA
I_GND	GND pin current	V_IN = 1.4 V, I_OUT = 0.5 A			4	mA
I_SDN	Shutdown GND pin current	PG = (open), V_IN = 6.5 V, V_EN = 0.4 V		0.1	15	µA
I_EN	EN pin current	V_IN = 6.5 V, 0 V ≤ V_EN ≤ 6.5 V	–0.2		0.2	µA
V_IL(EN)	EN pin low-level input voltage (device disabled)		0		0.4	V
V_IH(EN)	EN pin high-level input voltage (device enabled)		1.1		6.5	V
I_{SS_CTRL}	SS_CTRL pin current	V_IN = 6.5 V, 0 V ≤ V_{SS_CTRL} ≤ 6.5 V	–0.2		0.2	µA
V_IT(PG)	PG pin threshold	For PG transitioning low with falling V_OUT, expressed as a percentage of V_OUT(NOM)	82%	88.9%	93%
V_HYS(PG)	PG pin hysteresis	For PG transitioning high with rising V_OUT, expressed as a percentage of V_OUT(NOM)		1%
V_OL(PG)	PG pin low-level output voltage	V_OUT < V_IT(PG), I_PG = –1 mA (current into device)			0.4	V
I_LKG(PG)	PG pin leakage current	V_OUT > V_IT(PG), V_PG = 6.5 V			1	µA
I_NR/SS	NR/SS pin charging current	V_NR/SS = GND, V_{SS_CTRL} = GND	4.0	6.2	9.0	µA
I_NR/SS	NR/SS pin charging current	V_NR/SS = GND, V_{SS_CTRL} = V_IN	65	100	150	µA
I_FB	FB pin leakage current	V_IN = 6.5 V, V_FB = 0.8 V	–100		100	nA
PSRR	Power-supply ripple rejection	f = 500 kHz, V_IN = 3.8 V, V_OUT(NOM) = 3.3 V, I_OUT = 250mA, C_NR/SS = 10 nF, C_FF = 10 nF		39		dB
V_n	Output noise voltage	BW = 10 Hz to 100 kHz, V_IN = 1.8 V, V_OUT(NOM) = 0.8 V, I_OUT = 0.5 A, C_NR/SS = 10 nF, C_FF = 10 nF		4.7		µV_RMS
	Noise spectral density	f = 10 kHz, V_IN = 1.8 V, V_OUT(NOM) = 0.8 V, I_OUT = 0.5 A, C_NR/SS = 10 nF, C_FF = 10 nF		13		nV/√Hz
R_diss	Output active discharge resistance	V_EN = GND		250		Ω
T_sd	Thermal shutdown temperature	Shutdown, temperature increasing		160		°C
T_sd	Thermal shutdown temperature	Reset, temperature decreasing		140		°C

(1) When the device is connected to external feedback resistors at the FB pin, external resistor tolerances are not included.

(2) The device is not tested under conditions where V_IN > V_OUT + 2.5 V and I_OUT = 0.5 A because the power dissipation is higher than the maximum rating of the package. Also, this accuracy specification does not apply on any application condition that exceeds the power dissipation limit of the package under test.

6.6 Typical Characteristics

at T_J = 25°C, 1.4 V ≤ V_IN ≤ 6.5 V, V_IN ≥ V_OUT(NOM) + 0.3 V, V_OUT = 0.8 V, SS_CTRL = GND, I_OUT = 5 mA, V_EN = 1.1 V, C_OUT = 10 μF, C_NR/SS = C_FF = 0 nF, PG pin pulled up to V_OUT with 100 kΩ, and SS_CTRL = GND (unless otherwise noted)

V_OUT = 0.8 V, I_OUT = 500 mA, C_OUT = 10 µF,
C_NR/SS = C_FF = 10 nF

Figure 1. PSRR vs Frequency and Input Voltage

TPS7A90 Figure3-PSRRvsFreqvsVinVout=3.3V.gif

V_OUT = 3.3 V, I_OUT = 500 mA, C_OUT = 10 µF,
C_NR/SS = C_FF = 10 nF

Figure 3. PSRR vs Frequency and Input Voltage

TPS7A90 Figure5-PSRRvsFreqvsIoutVout=1.2V.gif

V_OUT = 1.2 V, V_IN = V_EN = 1.5 V, C_OUT = 10 µF,
C_NR/SS = C_FF = 10 nF

Figure 5. PSRR vs Frequency and Output Current

TPS7A90 Figure7-PSRRvsFreqvsCnrVout=1.2V.gif

V_OUT = 1.2 V, V_IN = V_EN = 1.7 V, I_OUT = 500 mA, C_OUT = 10 µF,
C_FF = 10 nF

Figure 7. PSRR vs Frequency and C_NR/SS

V_IN = 2.2 V, V_OUT = 1.2 V, I_OUT = 500 mA, C_IN = C_OUT = 10 µF,
C_FF = 10 nF, V_RMS BW = 10 Hz to 100 kHz

Figure 9. Spectral Noise Density vs Frequency and C_NR/SS

V_IN = 2.2 V, V_OUT = 1.2 V, I_OUT = 500 mA, C_IN = 10 µF,
C_NR/SS = C_FF = 10 nF, V_RMS BW = 10 Hz to 100 kHz

Figure 11. Spectral Noise Density vs Frequency and C_OUT

V_IN = 1.4 V, V_OUT = 0.8 V

Figure 13. Current Limit vs Temperature

I_OUT = 500 mA

Figure 15. Dropout Voltage vs Input Voltage

I_OUT = 50 mA

Figure 17. Line Regulation

V_IN = 1.4 V

Figure 19. Ground Current vs Output Current

Figure 21. PG Low Level Voltage vs PG Current
(V_IN = 1.4 V)

Figure 23. PG Threshold vs Temperature

Figure 25. Soft-Start Current vs Temperature
(SS_CTRL = GND)

Figure 27. Enable Threshold vs Temperature

TPS7A90 Figure29-LoadTransient0.8Vout.gif

V_IN = 1.4 V, I_OUT = 50 mA to 500 mA to 50 mA at 1 A/µs,
C_OUT = 10 µF, V_PG = V_OUT

Figure 29. Load Transient Response (V_OUT = 0.8 V)

V_IN = 1.4 V to 6.5 V to 1.4 V at 2 V/µs, V_OUT = 0.8 V,
I_OUT = 500 mA, C_NR/SS = C_FF = 10 nF, V_PG = V_OUT

Figure 31. Line Transient

V_IN = 1.4 V, V_PG = V_OUT

Figure 33. Start-Up (SS_CTRL = GND, C_NR/SS = 10 nF)

V_IN = 1.4 V, V_PG = V_OUT

Figure 35. Start-Up (SS_CTRL = V_IN, C_NR/SS = 1 µF)

TPS7A90 Figure2-PSRRvsFreqvsVinVout=1.2V.gif

V_OUT = 1.2 V, I_OUT = 500 mA, C_OUT = 10 µF,
C_NR/SS = C_FF = 10 nF

Figure 2. PSRR vs Frequency and Input Voltage

TPS7A90 Figure4-PSRRvsFreqvsVinVout=5.0V.gif

V_OUT = 5 V, I_OUT = 500 mA, C_OUT = 10 µF,
C_NR/SS = C_FF = 10 nF

Figure 4. PSRR vs Frequency and Input Voltage

TPS7A90 Figure6-PSRRvsFreqvsIoutVout=3.3V.gif

V_OUT = 3.3 V, V_IN = V_EN = 3.6 V, C_OUT = 10 µF,
C_NR/SS = C_FF = 10 nF

Figure 6. PSRR vs Frequency and Output Current

V_IN = V_OUT + 1.0 V, I_OUT = 500 mA, C_IN = C_OUT = 10 µF,
C_NR/SS = C_FF = 10 nF, V_RMS BW = 10 Hz to 100 kHz

Figure 8. Spectral Noise Density vs Frequency and
Output Voltage

V_IN = 2.2 V, V_OUT = 1.2 V, I_OUT = 500 mA, C_IN = C_OUT = 10 µF, C_NR/SS = 10 nF, V_RMS BW = 10 Hz to 100 kHz

Figure 10. Spectral Noise Density vs Frequency and C_FF

V_IN = 1.4 V, V_OUT = 0.8 V

Figure 12. Current Limit Foldback

V_IN = 5.5 V

Figure 14. Dropout Voltage vs Output Current

V_IN = 1.4 V

Figure 16. Load Regulation

V_EN = 0.4 V

Figure 18. Shutdown Current vs Input Voltage

Figure 20. Ground Current vs Input Voltage

Figure 22. PG Low Level Voltage vs PG Current
(V_IN = 6.5 V)

V_IN = V_PG = 6.5 V

Figure 24. PG Leakage Current vs Temperature

Figure 26. Soft-Start Current vs Temperature
(SS_CTRL = V_IN)

Figure 28. Input UVLO Threshold vs Temperature

TPS7A90 Figure30-LoadTransient5.0Vout.gif

V_IN = 5.5 V, I_OUT = 50 mA to 500 mA to 50 mA at 1 A/µs,
C_OUT = 10 µF, V_PG = V_OUT

Figure 30. Load Transient Response (V_OUT = 5.0 V)

V_IN = 1.4 V, V_PG = V_OUT

Figure 32. Start-Up (SS_CTRL = GND, C_NR/SS = 0 nF)

V_IN = 1.4 V, V_PG = V_OUT

Figure 34. Start-Up (SS_CTRL = V_IN, C_NR/SS = 10 nF)

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訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

6.2 ESD Ratings

6.3 Recommended Operating Conditions

6.4 Thermal Information

6.5 Electrical Characteristics

6.6 Typical Characteristics