ZHCSHR1A September 2017 – February 2018 TPS7A54-Q1
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
-
8 Application and Implementation
- 8.1
Application Information
- 8.1.1 Recommended Capacitor Types
- 8.1.2 Soft Start and Inrush Current
- 8.1.3 Optimizing Noise and PSRR
- 8.1.4 Charge Pump Noise
- 8.1.5 Current Sharing
- 8.1.6 Adjustable Operation
- 8.1.7 Power-Good Operation
- 8.1.8 Undervoltage Lockout (UVLO) Operation
- 8.1.9 Dropout Voltage (VDO)
- 8.1.10 Device Behavior During Transition From Dropout Into Regulation
- 8.1.11 Load Transient Response
- 8.1.12 Reverse Current Protection Considerations
- 8.1.13 Power Dissipation (PD)
- 8.1.14 Estimating Junction Temperature
- 8.2 Typical Application
- 8.1
Application Information
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGR|20
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGR|20
訂購(gòu)信息
11.6 靜電放電警告
ESD 可能會(huì)損壞該集成電路。德州儀器 (TI) 建議通過(guò)適當(dāng)?shù)念A(yù)防措施處理所有集成電路。如果不遵守正確的處理措施和安裝程序 , 可能會(huì)損壞集成電路。
ESD 的損壞小至導(dǎo)致微小的性能降級(jí) , 大至整個(gè)器件故障。 精密的集成電路可能更容易受到損壞 , 這是因?yàn)榉浅＜?xì)微的參數(shù)更改都可能會(huì)導(dǎo)致器件與其發(fā)布的規(guī)格不相符。