ZHCSHR1A September 2017 – February 2018 TPS7A54-Q1
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
-
8 Application and Implementation
- 8.1
Application Information
- 8.1.1 Recommended Capacitor Types
- 8.1.2 Soft Start and Inrush Current
- 8.1.3 Optimizing Noise and PSRR
- 8.1.4 Charge Pump Noise
- 8.1.5 Current Sharing
- 8.1.6 Adjustable Operation
- 8.1.7 Power-Good Operation
- 8.1.8 Undervoltage Lockout (UVLO) Operation
- 8.1.9 Dropout Voltage (VDO)
- 8.1.10 Device Behavior During Transition From Dropout Into Regulation
- 8.1.11 Load Transient Response
- 8.1.12 Reverse Current Protection Considerations
- 8.1.13 Power Dissipation (PD)
- 8.1.14 Estimating Junction Temperature
- 8.2 Typical Application
- 8.1
Application Information
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGR|20
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGR|20
訂購(gòu)信息
8.1.12 Reverse Current Protection Considerations
As with most LDOs, this device can be damaged by excessive reverse current.
Conditions where excessive reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT> VIN + 0.3 V:
- If the device has a large COUT, then the input supply collapses quickly and the load current becomes very small
- The output is biased when the input supply is not established
- The output is biased above the input supply
If an excessive reverse current flow is expected in the application, then external protection must be used to protect the device. Figure 46 shows one approach of protecting the device.
Figure 46. Example Circuit for Reverse Current Protection Using a Schottky Diode