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ZHCSBQ0B July 2013 – March 2015 TPS7A3501

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DRV|6
- MPDS216E

散熱焊盤機械數據 (封裝 | 引腳)

DRV|6
- QFND087M

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted).⁽¹⁾

		MIN	MAX	UNIT
Voltage	IN, NR, EN	–0.3	7	V
Voltage	OUT, SENSE	–0.3	V_IN + 0.3⁽²⁾	V
Current	OUT	Internally limited
Temperature	Operating junction, T_J	–40	125	°C
Temperature	Storage, T_stg	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Absolute maximum rating is V_IN + 0.3 V or + 7 V, whichever is smaller.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±1000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±250	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted).

		MIN	MAX	UNIT
V_IN	Input voltage	1.71	5	V
I_OUT	Output current	0	1	A
T_J	Operating junction temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		DRV (WSON)	UNIT
THERMAL METRIC⁽¹⁾		6 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	66.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	86.5
R_θJB	Junction-to-board thermal resistance	36.4
ψ_JT	Junction-to-top characterization parameter	1.8
ψ_JB	Junction-to-board characterization parameter	36.6
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	7.3

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At T_J = –40°C to 125°C, V_IN = 3.6 V, R_NR = ∞ (not connected), I_OUT = 10 mA, V_EN = V_IN, and C_IN = C_OUT = 10 µF, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_IN	Input voltage range		1.71		5	V
V_UVLO(in)	Input supply UVLO	V_IN increasing	1.5		1.7	V
V_UVLO(in)	Input supply UVLO	V_IN hysteresis		200		mV
V_OUT	Output voltage range		1.21		4.5	V
	V_IN – V_OUT voltage range		200		500	mV
		V_OUT(nom) = V_IN – 330 mV, I_OUT ≤ 1 A, 1.71 V ≤ V_IN ≤ 4.83 V	297	330	363	mV
		R_{NR_INTERNAL}⁽¹⁾	110	170	210	kΩ
		I_{NR_INTERNAL}⁽²⁾	1.4	1.8	2.4	µA
?V_OUT(?IOUT)	Load regulation	10 mA ≤ I_OUT ≤ 1 A		10		µV/mA
I_CL	Output current limit	V_OUT = 0.85 × V_OUT(nom)	1.1			A
I_GND	GND pin current			2.25	5	mA
I_EN	EN pin input current	V_EN = V_IN		1	50	nA
I_SHUTDOWN	Shutdown current (I_GND)	V_EN ≤ 0.3 V		0.01	3	µA
PSRR	Power-supply rejection ratio	f = 10 kHz, C_NR = 1 µF, I_OUT = 0.5 A		55		dB
		f = 100 kHz, C_NR = 1 µF, I_OUT = 0.5 A		40
		f = 1 MHz, C_NR = 1 µF, I_OUT = 0.5 A		42
V_n	Output noise voltage	BW = 10 Hz to 100 kHz, C_NR = 1 µF, I_OUT = 1 A		3.8		µV_RMS
		BW = 100 Hz to 100 kHz, C_NR = 1 µF, I_OUT = 1 A		3.62
		BW = 10 Hz to 1 MHz, C_NR = 1 µF, I_OUT = 1 A		12.1
V_EN(LO)	EN pin input low (disable)				0.4	V
V_EN(HI)	EN pin input high (enable)		1.1			V
T_sd	Thermal shutdown junction temperature	Shutdown, temperature increasing		165		°C
T_sd	Thermal shutdown junction temperature	Shutdown, temperature hysteresis		20		°C

(1) R_{NR_INTERNAL} refers to the internal resistor used to set (V_IN – V_OUT) for the device when no external R_NR is used. See Adjustable Voltage Drop and 典型應用電路for details.

(2) I_{NR_INTERNAL} refers to the internal current source used to set (V_IN – V_OUT) for the device when no external R_NR is used. See Adjustable Voltage Drop and 典型應用電路 for details.