ZHCSJ50C December 2018 – December 2022 TPS7A25
PRODUCTION DATA
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Typical Characteristics
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagrams
- 8.3 Feature Description
- 8.4 Device Functional Modes
- 9 Device and Documentation Support
- 10Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數據表獲取器件具體的封裝圖。
機械數據 (封裝 | 引腳)
- DRV|6
散熱焊盤機械數據 (封裝 | 引腳)
- DRV|6
訂購信息
9.1.4 Reverse Current
Excessive reverse current can damage this device. Reverse current flows through the intrinsic body diode of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.
Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT ≤ VIN + 0.3 V.
- If the device has a large COUT and the input supply collapses with little or no load current
- The output is biased when the input supply is not established
- The output is biased above the input supply
If reverse current flow is expected in the application, external protection is recommended to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated.
Figure 9-1 shows one approach for protecting the device.
Figure 9-1 Example
Circuit for Reverse Current Protection Using a Schottky DiodeFigure 9-2 shows another, more commonly used, approach in high input voltage applications.
Figure 9-2 Reverse Current Prevention Using A Diode Before the LDO