ZHCSEO1C March 2012 – February 2016 TPS65177 , TPS65177A
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
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7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3 Feature Description
- 7.4
Device Functional Modes
- 7.4.1 Boost Converter (V(AVDD))
- 7.4.2 Buck 1 Converter (V(IO))
- 7.4.3 BUCK 2 CONVERTER (V(CORE))
- 7.4.4 Buck 3 Converter (V(HAVDD))
- 7.4.5 Positive Charge Pump Controller (V(GH)) with Temperature Compensation
- 7.4.6 Negative Charge Pump Controller (V(GL))
- 7.5 Gate Pulse Modulation (V(GHM))
- 7.6
Programming
- 7.6.1 I2C Serial Interface Description
- 7.6.2 Memory Description
- 7.6.3 Read / Write Description
- 7.6.4 Write Operation
- 7.6.5 READ OPERATION
- 7.6.6 Write Single Data to DAC:
- 7.6.7 Write Multiple Data to DAC (Auto Increment Address):
- 7.6.8 Write all DAC Data to EEPROM:
- 7.6.9 Read Single Data From DAC / EEPROM:
- 7.6.10 Read Multiple Data fFom DAC / EEPROM (Auto Increment Address):
- 7.7
Register Map
- 7.7.1
Registers and DAC Settings
- 7.7.1.1 Channel Register (with factory value) - 00h (00h)
- 7.7.1.2 Boost Output Voltage V(AVDD) Register (with factory value) - 01h (0Fh)
- 7.7.1.3 Boost HVS Offset Voltage Register (with factory value) - 02h (05h)
- 7.7.1.4 Boost Current Limit Negative Offset Current Register (with factory value) - 03h (00h)
- 7.7.1.5 Boost Soft-start Time Register (with factory value) - 04h (00h)
- 7.7.1.6 Buck 1 Output Voltage V(IO) Register (with factory value) - 05h (03h):
- 7.7.1.7 Buck 2 Output Voltage V(CORE) Register (with factory value) - 06h (02h)
- 7.7.1.8 Buck 3 Output Voltage V(HAVDD) Register (with factory value) - 07h (1Bh)
- 7.7.1.9 Pos. Charge Pump Low Output Voltage V(GH_L) Register (with factory value) - 08h (08h):
- 7.7.1.10 Positive Charge Pump Low Output Voltage V(GH_L) to V(GH_H) Positive Offset Voltage V(GH_OFS) Register (with factory value) - 09h (04h):
- 7.7.1.11 Gate Pulse Modulation Limit Voltage Register (with factory value) - 0Ah (00h)
- 7.7.1.12 Negative Charge Pump Output Voltage V(GL) Register (with factory value) - 0Bh (04h)
- 7.7.1.13 Buck 3 HVS Offset Voltage Register (with factory value) - 0Ch (00h):
- 7.7.1.14 Memory Write Remain Time Register (with factory value) - FEh (0Fh):
- 7.7.1
Registers and DAC Settings
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械、封裝和可訂購信息
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
- RHA|40
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
11 器件和文檔支持
11.1 相關(guān)鏈接
以下表格列出了快速訪問鏈接。范圍包括技術(shù)文檔、支持與社區(qū)資源、工具和軟件，并且可以快速訪問樣片或購買鏈接。
11.2 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.3 社區(qū)資源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
11.4 商標
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 靜電放電警告
這些裝置包含有限的內(nèi)置 ESD 保護。 存儲或裝卸時，應(yīng)將導(dǎo)線一起截短或?qū)⒀b置放置于導(dǎo)電泡棉中，以防止 MOS 門極遭受靜電損傷。
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.