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ZHCSF63A September 2013 – June 2016 TPS65154

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RSL|48
- MPQF193B

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

RSL|48
- QFND155O

訂購信息

4 Specifications

4.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Pin voltage	VIN, VCC, SCL, SDA, FLK, WP, XAO, COMP1	–0.3	7	V
	AVDD, SW1, VCOM, NEG, BSUP, RST	–0.3	12	V
	EN, PWM	–0.3	20	V
	COMP2, COMP3, ISET	–0.3	3.6	V
	C1A, C1B	–10	12	V
	VGL	–10	0.3	V
	SW3, OVP	–0.3	40	V
	IFB1, IFB2, IFB3, IFB4, IFB5, IFB6, VGH, VGHM, RE, SW2	–0.3	30	V
Pin current	SW2		TBD	A
Ambient temperature, T_A		–40	85	°C
Junction temperature, T_J		–40	150	°C
Storage temperature, T_STG		–65	150	°C

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

4.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	700	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions

			MIN	NOM	MAX	UNIT
V_IN	Input voltage range	Normal operation	2.0		5.5	V
V_IN	Input voltage range	EEPROM programming	2.6		5.5	V
dV_IN/dt	V_IN rise time		0.45		11	ms
V_BSUP	Input voltage range		6.5		9.6	V
V_BAT	Input voltage range		4.5		24	V
dV_BAT/dt	V_BAT rise time		0.45		11	ms
LINEAR REGULATOR (V_CC)
V_CC	Output voltage		1.0		2.5	V
I_ICC	Output current				300	mA
C_OUT	Output capacitance		4.7	10	22	µF
BOOST CONVERTER 1 (AV_DD)
AV_DD	Boost converter 1 output voltage range		6.5		9.6	V
IAV_DD	Boost converter 1 output current at V_IN = 3.7 V				400	mA
L	Inductance		4.7	10	15	µH
C_OUT	Boost converter 1 output capacitance		4.7	10	22	µF
BOOST CONVERTER 2 (V_GH)
AV_DD	Input voltage range		6.5		9.6	V
V_GH	Output voltage range		18		25.5	V
I_GH	Output current				25	mA
L	Inductance		4.7	10	15	µH
C_OUT	Output capacitance		1	4.7	10	µF
NEGATIVE CHARGE PUMP (V_GL)
V_GL	Output voltage		–5		–8	V
I_GL	Output current				25	mA
C_FLY	Flying capacitance			0.5		µF
C_OUT	Output capacitance		0.5		5	µF
BOOST CONVERTER 3 (WLED)
V_OUT	Output voltage				38	V
I_OUT	Output current				250	mA
L	Inductance		4.7	10	15	µH
C_OUT	Output capacitance		2.2	4.7	10	µF
INTERNAL REGULATOR
C_OUT	Capacitance connected to the TCOMP pin		1			µF

4.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS65154	UNIT
		RSL (VQFN)
		48 PIN
R_θJA	Junction-to-ambient thermal resistance	29.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	15.8	°C/W
R_θJB	Junction-to-board thermal resistance	5.2	°C/W
ψ_JT	Junction-to-top characterization parameter	0.2	°C/W
ψ_JB	Junction-to-board characterization parameter	5.1	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	0.8	°C/W

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report.

4.5 Electrical Characteristics

V_IN = 3.3 V, V_LED = 12 V, V_CC = 2.5 V, AV_DD = 8 V, V_GL = –6.8 V, V_GH = 20 V, T_A = −40°C to 85°C. Typical values are at 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SUPPLY
I_IN	Supply current into VIN pin	Converters not switching			0.1	1	mA
I_AVDD	Supply current into AVDD pins	Pins 2 and 3 connected together			0.75	2.5	mA
I_BSUP	Supply current into BSUP pin				2.5	5	mA
I_GH	Supply current into VGH pin	No load on VGHM			0.1	1	mA
UNDERVOLTAGE LOCKOUT
V_UVLO	Undervoltage lockout threshold	V_IN falling		1.75			V
	Undervoltage lockout threshold	V_IN rising				2.2	V
	Hysteresis			90			mV
LINEAR REGULATOR (V_CC)
V_CC	Linear regulator output voltage range			1.0		2.5	V
V_CC	Tolerance	I_CC = 10 mA		–3%		+3%
V_UVP	Undervoltage protection threshold	V_CCfalling		60%	70%	75%
V_SCP	Short circuit protection threshold	V_CCfalling		25%	30%	40%
I_LIM	Current limit	V_CC = 5% below value at 10 mA.	T_J = 25°C to 125°C	300			mA
I_LIM	Current limit	V_CC = 5% below value at 10 mA.	T_J = –40°C	250			mA
r_DS(ON)	Active pull-down resistance			10	21	35	Ω
BOOST CONVERTER 1 (AV_DD)
AV_DD	Output voltage range			6.5		9.6	V
AV_DD	Tolerance			–2%		+2%
V_UVP	Undervoltage protection threshold			60%	70%	75%
V_SCP	Short-circuit protection threshold			25%	30%	35%
r_DS(ON)	Switch ON resistance	I_SW = 1 A			0.1	0.25	Ω
I_LIM	Switch current limit			2.4	3.0	3.6	A
r_DS(ON)	Rectifier ON resistance	I_SW = 1 A			0.25	0.4	Ω
f_SW	Switching frequency			400		1000	kHz
f_SW	Tolerance			–20%		+20%
NEGATIVE CHARGE PUMP (V_GL)
V_GL	Output voltage range			–5		–8	V
V_GL	Output voltage tolerance			–3%		3.5%
V_UVP	Undervoltage protection threshold	V_GL rising		65%	70%	75%
V_SCP	Short-circuit protection threshold	V_GL rising		25%	30%	35%
I_DRVN	Maximum drive current	C1B sinking		50		150	mA
I_DRVN	Maximum drive current	C1B sourcing		60		160	mA
V_DO	Dropout voltage	f_SW = 500 kHz, C_FLY = 0.5 µF, I_GL = 10 mA			0.6	1.0	V
f_SW	Switching frequency			400	500	600	kHz
r_DS(ON)	Discharge ON resistance	I_MEAS = 2 mA		2.1	3	3.9	kΩ
BOOST CONVERTER 2 (V_GH)
V_GH	Output voltage range			18		25.5	V
V_GH	Tolerance			–3%		3%
V_UVP	Undervoltage protection threshold	V_GH falling		65%	70%	75%
V_SCP	Short-circuit protection threshold	V_GH falling		25%	30%	35%
r_DS(ON)	Switch ON resistance	I_SW = 1 A			0.3	1.0	Ω
t_ON(MAX)	Maximum t_ON time			1	2	2.5	µs
t_OFF	t_OFF time			2	2.7	4	µs
BOOST CONVERTER 3
V_OUT	Output voltage range			V_LED+2		38	V
I_LIM	Switch current limit			2.0	2.7	3.7	A
r_DS(ON)	Switch ON resistance	I_SW = 1 A			0.2	0.35	Ω
V_OVP	OVP range			30		39	V
V_OVP	Tolerance			-5%		+5%
V_IL	EN low input voltage	EN falling				0.6	V
V_IH	EN high input voltage	EN rising		1.5			V
V_IH – V_IL	EN input hysteresis			0.09	0.16	0.27	V
R_PULL-DOWN	EN pull-down resistance			450	750	1250	kΩ
WLED DIMMING
I_FB	Maximum current			40			mA
I_FB	Channel-to-channel current matching			–3%		+3%
	Output dimming resolution				10		bits
D_MIN	Minimum output duty cycle					1%
D_HYS	Input PWM jitter hysteresis			–0.048%		0.048%
V_SET	ISET regulation voltage			–3%	1.0	+3%	V
K_SET	ISET multiplication constant			1260	1296	1332
V_IL	PWM low input voltage	PWM falling				0.6	V
V_IH	PWM high input voltage	PWM rising		1.2			V
V_IH – V_IL	PWM input voltage hysteresis			0.09	0.16	0.27	V
R_PULL-DOWN	PWM pull-down resistance			450	750	1250	kΩ
RESET (RST)
V_OL	Output voltage	I_RST = 1 mA (sinking)			0.2	0.5	V
I_OH	Leakage current	V_RST = 1.8 V				1	µA
PROGRAMMABLE VCOM
SET_ZSE	VCOM DAC set zero-scale error	V_MIN = 07h, V_MAX = 07h		−7		7	LSB
	VMAX DAC set zero-scale error			–1		1
	VMIN DAC set zero-scale error			–1		1
SET_FSE	VCOM set full-scale error	V_MIN = 07h, V_MAX = 07h		−7		7	LSB
	VMAX set full-scale error			–1		1
	VMIN set full-scale error			−1		1
DNL	Differential nonlinearity	V_COM				1	LSB
		V_MAX				1
		V_MIN				1
BW	Small-signal bandwidth	Closed-loop; A_V = –1; R_F = 1 kΩ, R_IN = 1 kΩ, V_CM = 4 V; V_SIGNAL = 63 mV_pp; R_L = ∞			21		MHz
I_OUT	Peak output current	Open-loop; V_POS = 4 V, V_NEG = 3 V			400		mA
I_OUT	Peak output current	Open-loop; V_POS = 4 V, V_NEG = –5 V			330		mA
SR	Slew rate	Open-loop; V_POS = 4 V, V_NEG = 5 V			36		V/µs
SR	Slew rate	Open-loop; V_POS = 4 V, V_NEG = 3 V			33		V/µs
I_IB–	Input bias current (inverting input)	Closed-loop; A_V = +1; R_F = 1 MΩ; V_POS = 4 V		−1		1	μA
V_DROP	Output voltage drop	Open-loop; V_POS = 4 V; I_MEAS = 10 mA	V_NEG = 3 V		0.06	0.1	V
V_DROP	Output voltage drop	Open-loop; V_POS = 4 V; I_MEAS = 10 mA	V_NEG = 5 V		0.03	0.1	V
GATE VOLTAGE SHAPING
r_DS(ON)H	VGH to VGHM ON resistance	V_GH = 20 V, I_GHM = 10 mA, V_FLK = 1.8 V			13	25	Ω
r_DS(ON)L	VGHM to RE ON resistance	V_GHM = 20 V, I_GHM = 10 mA, V_FLK = 0 V			26	50	Ω
r_DS(ON)L	VGHM to RE ON resistance	V_GHM = 6 V, I_GHM = 10 mA, V_FLK = 0 V			26	50	Ω
V_IL	FLK low input voltage threshold	V_FLK falling		0.6			V
V_IH	FLK high input voltage threshold	V_FLK rising				1.2	V
V_IH – V_IL	FLK input hysteresis			0.09	0.15	0.27	V
I_IL	FLK low input current	V_FLK = 0 V		–100		100	nA
I_IH	FLK high input current	V_FLK = 1.8 V		–100		100	nA
PANEL RESET (XAO)
V_OL(XAO)	Output voltage	I_XAO = 1 mA (sinking)			0.16	0.5	V
I_LK(XAO)	Leakage current	V_XAO = 1.8 V				1	µA
V_DET	XAO Threshold voltage range	V_IN falling		V_UVLO		3.0	V
	Tolerance	V_IN falling		–3%		+3%
	Hysteresis	V_IN rising		0.05		0.3	V
I²C INTERFACE
ADDR	Configuration parameters slave address				74h
ADDR	Programmable VCOM slave address				28h
V_IL	Low level input voltage	SCL or SDA falling, standard and fast modes				0.6	V
V_IH	High level input voltage	SCL or SDA rising, standard and fast modes		1.0			V
V_IH – V_IL	Input hysteresis			0.05			V
V_OL	Low level output voltage	Sinking 3 mA				0.36	V
C_I	Input capacitance					10	pF
C_B	Capacitive load on SDA and SCL	Standard mode				400	pF
C_B	Capacitive load on SDA and SCL	Fast mode				400	pF
EEPROM
V_IL	WP low input voltage threshold	V_WP falling		0.8			V
V_IH	WP high input voltage threshold	V_WP rising				1.2	V
V_IH – V_IL	WP input voltage hysteresis			0.03	0.05	0.1	V
R_PULL-UP	WP internal pull-up resistor			20	60	100	kΩ
N_WRITE	Number of write cycles			1000
	Data retention	Storage temperature = 150 °C		100			1000 hrs
THERMAL SHUTDOWN
T_SD	Thermal shutdown temperature				150		°C
T_SD	Thermal shutdown hysteresis				10		°C

4.6 Timing Requirements