ZHCSQG4E March 2004 – April 2022 TPS65130 , TPS65131
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| DC-DC STAGE (VPOS, VNEG) | |||||||
| VPOS | Adjustable output voltage range | VIN+ 0.5 V | 15 | V | |||
| VNEG | Adjustable output voltage range | –15 | –2 | V | |||
| VREF | Reference voltage | IREF = 10 μA | 1.2 | 1.213 | 1.225 | V | |
| IFBP | Positive feedback input bias current | VFBP = VREF | 50 | nA | |||
| IFBN | Negative feedback input bias current | VFBN = 0.1 VREF | 50 | nA | |||
| VFBP | Positive feedback regulation voltage | VIN = 2.7 V to 5.5 V | 1.189 | 1.213 | 1.237 | V | |
| VFBN | Negative feedback regulation voltage | VIN = 2.7 V to 5.5 V | –0.024 | 0 | 0.024 | V | |
| Total Output DC accuracy | 3% | ||||||
| rDS(ON)(N) | Inverter switch ON-resistance | VIN = 3.6 V | 440 | 620 | m? | ||
| VIN = 5 V | 330 | 530 | |||||
| ILIMN | TPS65130 Inverter switch current limit | 2.7 V < VIN < 5.5 V | 700 | 800 | 900 | mA | |
| ILIMN | TPS65131 Inverter switch current limit | VIN = 3.6 V | 1800 | 1950 | 2200 | mA | |
| rDS(ON)(P) | Boost switch ON-resistance | VPOS = 5 V | 230 | 300 | m? | ||
| VPOS = 10 V | 170 | 200 | |||||
| ILIMP | TPS65130 Boost switch current limit | 2.7 V < VIN < 5.5 V, VPOS = 8 V | 700 | 800 | 900 | mA | |
| ILIMP | TPS65131 Boost switch current limit | VIN = 3.6 V, VPOS = 8 V | 1800 | 1950 | 2200 | mA | |
| CONTROL STAGE | |||||||
| VIH | High level input voltage, ENP, ENN, PSP, PSN | 1.4 | V | ||||
| VIL | Low level input voltage, ENP, ENN, PSP, PSN | 0.4 | V | ||||
| IIN | Input current, ENP, ENN, PSP, PSN | ENP, ENN, PSP, PSN = GND or VIN | 0.01 | 0.1 | μA | ||
| RBSW | Output resistance | 27 | kΩ | ||||
| VIN | Input voltage range | 2.7 | 5.5 | V | |||
| IQ | Quiescent current | VIN | VIN = 3.6 V, IPOS = INEG = 0, ENP = ENN = PSP = PSN = VIN, VPOS = 8 V, VNEG = –5 V | 300 | 500 | μA | |
| VPOS | 100 | 120 | μA | ||||
| VNEG | 100 | 120 | μA | ||||
| ISD | Shutdown supply current | ENN = ENP = GND | 0.2 | 1.5 | μA | ||
| VUVLO | Undervoltage lockout threshold | 2.1 | 2.35 | 2.7 | V | ||
| Thermal shutdown | 150 | °C | |||||
| Thermal shutdown hysteresis | Junction temperature decreasing | 5 | °C | ||||