ZHCSL99G September 2019 – January 2025 TPS62860 , TPS62861
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ(VIN) | VIN quiescent current | EN = VIN, IOUT = 0μA, VOUT = 1.2 V device not switching, TJ = -40°C to +85°C |
2.3 | 4 | μA | |
| EN = VIN, IOUT = 0μA, VOUT = 1.2 V, device switching | 2.5 | μA | ||||
| ISD(VIN) | VIN shutdown supply current | EN = GND, shutdown current into VIN VSEL/MODE = GND, TJ = -40°C to +85°C |
120 | 250 | nA | |
| UVLO | ||||||
| VUVLO(R) | VIN UVLO rising threshold | VIN rising | 1.65 | 1.75 | V | |
| VUVLO(F) | VIN UVLO falling threshold | VIN falling | 1.56 | 1.7 | V | |
| VUVLO(H) | VIN UVLO hysteresis | 100 | mV | |||
| LOGIC PINs | ||||||
| VIH | High-level input voltage threshold | 0.8 | V | |||
| VIL | Low-level input voltage threshold | 0.4 | V | |||
| ILKG | Input leakage current into SDA, SCL, VSEL | Pin connected to VIN | 10 | 25 | nA | |
| EN internal pull-down resistance | EN pin to GND | 0.5 | M? | |||
| ILKG | Input Leakage into EN | Pin connected to VIN | 10 | 25 | nA | |
| VOUT VOLTAGE | ||||||
| VOUT | Output Voltage Accuracy | PWM Mode, no load, TJ = 25°C to 85°C | -1 | +1 | % | |
| VOUT | Output Voltage Accuracy | PWM Mode, no load, TJ = -40°C to 125°C | -2 | +1.7 | % | |
| IVOS(LKG) | VOS input leakage current | EN = VIN, VOUT = 1.2 V (internal 12MΩ resistor divider), TJ = -40°C to +85°C |
100 | 400 | nA | |
| SWITCHING FREQUENCY | ||||||
| fSW(FCCM) | Switching frequency, TPS62861x | VIN = 3.6V, VOUT =1.2V, PWM operation | 4 | MHz | ||
| fSW(FCCM) | Switching frequency, TPS62860x | VIN = 3.6V, VOUT =1.2V, PWM operation | 1.5 | MHz | ||
| STARTUP | ||||||
| Internal fixed soft-start time | from VOUT = 0V to 95% of VOUT nominal | 0.125 | 0.2 | ms | ||
| EN HIGH to start of switching delay | 500 | 1000 | μs | |||
| POWER STAGE | ||||||
| RDSON(HS) | High-side MOSFET on-resistance | IOUT = 500 mA | 120 | 170 | mΩ | |
| RDSON(LS) | Low-side MOSFET on-resistance | IOUT = 500 mA | 80 | 115 | mΩ | |
| OVERCURRENT PROTECTION | ||||||
| IHS(OC) | High-side peak current limit | TPS628610 | 1.3 | 1.45 | 1.55 | A |
| ILS(OC) | Low-side valley current limit | TPS628610 | 1.2 | 1.35 | 1.45 | A |
| IHS(OC) | High-side peak current limit | TPS628601 | 0.95 | 1.1 | 1.2 | A |
| ILS(OC) | Low-side valley current limit | TPS628601 | 0.85 | 1.0 | 1.1 | A |
| ILS(NOC) | Low-side negative current limit | Sinking current limit on LS FET | 0.8 | A | ||
| POWER GOOD | ||||||
| VPGTH | Power Good threshold | PGOOD low, VOS falling | 93% | |||
| VPGTH | Power Good threshold | PGOOD high, VOS rising | 96% | |||
| tPG:DLY | Power good deglitch delay | PG rising edge | 16 | μs | ||
| IPG;LKG | Input leakage current into PG-pin | VPG = 5.0V | 10 | 100 | nA | |
| PG-pin output low-level voltage | IPG = 1mA | 400 | mV | |||
| OUTPUT DISCHARGE | ||||||
| Output discharge resistor on VOS pin | EN = GND, IVOS = –10 mA into VOS pin TJ = -40°C to +85°C |
7 | 11 | ? | ||
| THERMAL SHUTDOWN | ||||||
| TJ(SD) | Thermal shutdown threshold (1) | Temperature rising, PWM Mode | 160 | °C | ||
| TJ(HYS) | Thermal shutdown hysteresis (1) | 20 | °C | |||