ZHCSMB6E March 2010 – October 2020 TPS62065 , TPS62067
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Input voltage range | 2.9 | 6 | V | ||
| IQ | Operating quiescent current | IOUT = 0 mA, device operating in PFM mode and device not switching | 18 | μA | ||
| ISD | Shutdown current | EN = GND, current into AVIN and PVIN(1) | 0.1 | 1 | μA | |
| VUVLO | Undervoltage lockout threshold | Falling | 1.73 | 1.78 | 1.83 | V |
| Rising | 1.9 | 1.95 | 1.99 | |||
| ENABLE, MODE | ||||||
| VIH | High level input voltage | 2.9 V ≤ VIN ≤ 6 V | 1 | 6 | V | |
| VIL | Low level input voltage | 2.9 V ≤ VIN ≤ 6 V | 0 | 0.4 | V | |
| IIN | Input bias current | EN, mode tied to GND or AVIN(1) | 0.01 | 1 | μA | |
| POWER GOOD OPEN-DRAIN OUTPUT | ||||||
| VTHPG | Power good threshold voltage | Rising feedback voltage | 93% | 95% | 98% | |
| Falling feedback voltage | 87% | 90% | 92% | |||
| VOL | Output low voltage | IOUT = –1mA; must be limited by external pullup resistor (1) | 0.3 | V | ||
| VH | Output high voltage | Voltage applied to PG pin through external pullup resistor | VIN | V | ||
| ILKG | Leakage current into PG pin | V(PG) = 3.6V(1) | 100 | nA | ||
| tPGDL | Internal power good delay time | 5 | μs | |||
| POWER SWITCH | ||||||
| RDS(on) | High-side MOSFET on-resistance | VIN = 3.6 V (1) | 120 | 180 | m? | |
| VIN = 5 V(1) | 95 | 150 | ||||
| RDS(on) | Low-side MOSFET on-resistance | VIN = 3.6 V(1) | 90 | 130 | mΩ | |
| VIN = 5 V(1) | 75 | 100 | ||||
| ILIMF | Forward current limit MOSFET high-side and low-side | 2.9 V ≤ VIN ≤ 6 V | 2300 | 2750 | 3300 | mA |
| TSD | Thermal shutdown | Increasing junction temperature | 150 | °C | ||
| Thermal shutdown hysteresis | Decreasing junction temperature | 10 | ||||
| OSCILLATOR | ||||||
| fSW | Oscillator frequency | 2.9 V ≤ VIN ≤ 6 V | 2.6 | 3 | 3.4 | MHz |
| OUTPUT | ||||||
| Vref | Reference voltage | 600 | mV | |||
| VFB(PWM) | Feedback voltage PWM mode | PWM operation, MODE = VIN , 2.9 V ≤ VIN ≤ 6 V, 0 mA load | –1.5% | 0% | 1.5% | |
| VFB(PFM) | Feedback voltage PFM mode, voltage positioning | device in PFM mode, voltage positioning active(2) | 1% | |||
| VFB | Load regulation | –0.5 | %/A | |||
| Line regulation | 0 | %/V | ||||
| R(Discharge) | Internal discharge resistor | Activated with EN = GND, 2.9 V ≤ VIN ≤ 6 V, 0.8 ≤ VOUT ≤ 3.6 V | 75 | 200 | 1450 | Ω |
| tSTART | Start-up time | Time from active EN to reach 95% of VOUT | 500 | μs | ||