ZHCSJE4B September 2017 – February 2019 TPS61085A-Q1
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械、封裝和可訂購信息
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
- DGK|8
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
8.2.2.2 Rectifier Diode Selection
To achieve high efficiency, a Schottky type must be used for the rectifier diode. The reverse voltage rating must be higher than the maximum output voltage of the converter. The averaged rectified forward current Iavg, the Schottky diode requirement is rated for, is equal to the output current Iout:
Usually a Schottky diode with 2-A maximum average rectified forward current rating is sufficient for most applications. The Schottky rectifier can be selected with lower forward current capability depending on the output current Iout but must be able to dissipate the power. The dissipated power is the average rectified forward current times the diode forward voltage.
Typically the diode must be able to dissipate around 500 mW depending on the load current and forward voltage. See Table 4 for few diode options. Customers must verify and validate these components for suitability with their application before using them.
Table 4. Rectifier Diode Selection
| CURRENT RATING (Iavg) | Vr | Vforward / Iavg | SUPPLIER(1) | COMPONENT CODE | PACKAGE TYPE |
|---|---|---|---|---|---|
| 750 mA | 20 V | 0.425 V / 750 mA | Fairchild Semiconductor | FYV0704S | SOT-23 |
| 1 A | 20 V | 0.39 V / 1 A | NXP | PMEG2010AEH | SOD-123 |
| 1 A | 20 V | 0.52 V / 1 A | Vishay Semiconductor | B120 | SMA |
| 1 A | 20 V | 0.5 V / 1 A | Vishay Semiconductor | SS12 | SMA |
| 1 A | 20 V | 0.44 V / 1 A | Vishay Semiconductor | MSS1P2L | µ-SMP
(Low Profile) |