ZHCSJE4B September 2017 – February 2019 TPS61085A-Q1
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Input voltage | 2.3 | 6 | V | ||
| IQ | Operating quiescent current into IN | Device not switching, VFB = 1.3 V | 70 | 100 | µA | |
| ISDVIN | Shutdown current into IN | EN = GND | 1 | µA | ||
| UVLO | Undervoltage lockout threshold | VIN falling | 2.2 | V | ||
| VIN rising | 2.3 | |||||
| TSD | Thermal shutdown | Temperature rising, TJ | 150 | °C | ||
| TSD(HYS) | Thermal shutdown hysteresis | 14 | °C | |||
| LOGIC SIGNALS EN, FREQ | ||||||
| VIH | High level input voltage | VIN = 2.3 V to 6 V | 2 | V | ||
| VIL | Low level input voltage | VIN = 2.3 V to 6 V | 0.5 | V | ||
| Ilkg | Input leakage current | EN = FREQ = GND | 0.1 | µA | ||
| BOOST CONVERTER | ||||||
| VS | Boost output voltage | VIN + 0.5 | 18.5 | V | ||
| VFB | Feedback regulation voltage | 1.230 | 1.238 | 1.246 | V | |
| gm | Transconductance error amplifier | 107 | µA/V | |||
| IFB | Feedback input bias current | VFB = 1.238 V | 0.1 | µA | ||
| RDS(on) | N-channel MOSFET ON-resistance | VIN = VGS = 5 V, ISW = current limit | 0.13 | 0.2 | Ω | |
| VIN = VGS = 3.3 V, ISW = current limit | 0.15 | 0.24 | ||||
| Ilkg | SW leakage current | EN = GND, VSW = 6 V | 2 | µA | ||
| ILIM | N-channel MOSFET current limit | 2 | 2.6 | 3.2 | A | |
| ISS | Soft-start current | VSS = 1.238 V | 7 | 10 | 13 | µA |
| fosc | Oscillator frequency | FREQ = high | 0.9 | 1.2 | 1.5 | MHz |
| FREQ = low | 480 | 650 | 820 | kHz | ||
| Line regulation | VIN = 2.3 V to 6 V, IOUT = 10 mA | 0.0002 | %/V | |||
| Load regulation | VIN = 3.3 V, IOUT = 1 mA to 400 mA | 0.11 | %/A | |||