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SLVS279D March 2000 – August 2015 TPS61000 , TPS61002 , TPS61005 , TPS61006 , TPS61007

PRODUCTION DATA.

封裝選項

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機械數(shù)據(jù) (封裝 | 引腳)

DGS|10

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_I	Input voltage (V_BAT, V_OUT, COMP, FB, LBO, EN, LBI)	–0.3	3.6	V
V_I	Input voltage (SW)	–0.3	V_OUT + 0.7	V
	Peak current into SW		1300	mA
	Continuous total power dissipation	See Thermal Information
T_A	Operating free-air temperature	–40	85	°C
T_J	Maximum junction temperature		150	°C
	Lead temperature		260	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±1000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	NOM	MAX	UNIT
V_BAT	Supply voltage		0.8		V_O	V
V_O	Output current	V_BAT = 0.8 V		100		mA
V_O	Output current	V_BAT = 0.8 V		250		mA
	Inductor		10		33	µH
	Input capacitor			10		µF
	Output capacitor			22		µF
T_J	Operating junction temperature		–40		125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS6100x	UNIT
		DGS (VSSOP)
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	160.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	54.4	°C/W
R_θJB	Junction-to-board thermal resistance	80.5	°C/W
ψ_JT	Junction-to-top characterization parameter	6.3	°C/W
ψ_JB	Junction-to-board characterization parameter	79.2	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor andIC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over recommended operating free-air temperature range, V_BAT = 1.2 V, EN = V_BAT (unless otherwise noted)

PARAMETER			TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_I	Input voltage for start up		R_L = 33 Ω		0.9			V
	Input voltage for start up		R_L = 3 kΩ,	T_A = 25°C	0.8
	Input voltage once started		I_O = 100 mA		0.8
V_O	Programmable output voltage	TPS61000, TPS61007	I_O = 100 mA		1.5		3.3	V
V_O	Output voltage	TPS61001	1.2 V,	I_O = 1 mA	1.44	1.5	1.55	V
		TPS61001	0.8 V < V_I < V_O,	I_O = 100 mA	1.45	1.5	1.55	V
		TPS61002	1.2 V,	I_O = 1 mA	1,72	1.8	1.86	V
		TPS61002	0.8 V < V_I < V_O,	I_O = 100 mA	1.74	1.8	1.86	V
		TPS61003	1.2 V,	I_O = 1 mA	2.40	2.5	2.58	V
			0.8 V < V_I < V_O,	I_O = 100 mA	2.42	2.5	2.58
			1.6 V < V_I< V_O,	I_O = 200 mA	2.42	2.5	2.58
		TPS61004	1.2 V,	I_O = 1 mA	2.68	2.8	2.89	V
			0.8 V < V_I < V_O,	I_O = 100 mA	2.72	2.8	2.89
			1.6 V < V_I< V_O,	I_O = 200 mA	2.72	2.8	2.89
		TPS61005	1.2 V,	I_O = 1 mA	2.88	3.0	3.1	V
			0.8 V < V_I < V_O,	I_O = 100 mA	2.9	3.0	3.1
			1.6 V < V_I< V_O,	I_O = 200 mA	2.9	3.0	3.1
		TPS61006	1.2 V,	I_O = 1 mA	3.16	3.3	3.4	V
			0.8 V < V_I < V_O,	I_O = 100 mA	3.2	3.3	3.4
			1.6 V < V_I< V_O,	I_O = 200 mA	3.2	3.3	3.4
I_O	Maximum continuous output current		V_I = 0.8 V		100			mA
I_O	Maximum continuous output current		V_I = 1.8 V		250			mA
I_ILIM	Switch current limit	TPS61001	0.8 V < V_I < V_O			0.5		A
		TPS61002				0.65
		TPS61003				0.9
		TPS61004				0.95
		TPS61005				1
		TPS61006				1.1
V_FB	Feedback voltage	TPS61000, TPS61007			468	500	515	mV
f	Oscillator frequency				360	500	840	kHz
D_MAX	Maximum duty cycle					85%
r_DS(on)	Switch-on resistance		V_O = 3.3 V			0.18	0.27	Ω
	Line regulation ⁽¹⁾		V_I= 0.8 V to 1.25 V,	I_O = 50 mA		0.3		%/V
	Load regulation fixed output voltage versions ⁽¹⁾		V_I= 1.2 V,	I_O = 10 mA to 90 mA		0.25%
I_Q	Quiescent current drawn from power source ower (current into V_BAT and into V_OUT)		I_O = 0 mA, V_EN = V_I, V_O = 3.4 V	V_BAT			44	µA
I_Q			I_O = 0 mA, V_EN = V_I, V_O = 3.4 V	V_OUT			6	µA
I_SD	Shutdown current from power source (current into V_BAT and into V_OUT)		V_EN = 0 V			0.2	5	µA
V_IL	EN low-level input voltage						0.2x V_BAT	V
V_IH	EN high-level input voltage				0.8 × V_BAT			V
	EN input current		EN = GND or V_BAT			0.1	1	µA
V_IL	LBI low-level input voltage threshold		V_LBI voltage decreasing		470	500	530	mV
	LBI input hysteresis					10		mV
I_I	LBI input current					0.01	0.1	µA
V_OL	LBO low-level output voltage		V_LBI= 0 V, V_O = 3.3 V, I_OL = 50 µA			0.04	0.2	V
	LBO output leakage current		V_LBI = 650 mV, V_LBO = 3.3 V			0.01	1	µA
I_FB	FB input bias current (TPS61000, TPS61007 only)		V_FB = 500 mV			0.01	0.1	µA

(1) Line and load regulation is measured as a percentage deviation from the nominal value (i.e., as percentage deviation from the nominal output voltage). For line regulation, x %/V stands for ±x% change of the nominal output voltage per 1-V change on the input/supply voltage. For load regulation, y% stands for ±y% change of the nominal output voltage per the specified current change.

7.6 Typical Characteristics

Table 1. Table of Graphs

	TITLE
η	Efficiency	vs Output Current	Figure 1, Figure 2
		vs Inductor Type	Figure 3
		vs Input Voltage	Figure 4
I_O	Maximum Output Current	vs Input Voltage	Figure 5
V_O	Output Voltage	vs Output Current	Figure 6
V_O	TPS61007 Output Voltage	vs Output Current	Figure 7
I_Q	No-Load Supply Current	vs Input Voltage	Figure 8
I_SD	Shutdown Current	vs Input Voltage	Figure 9
V_I	Minimum Start-Up Input Voltage	vs Load Current	Figure 10
I_LIM	Switch Current Limit	vs Output Voltage	Figure 11