ZHCSCL9A July 2014 – September 2021 TPS55340-EP
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| VIN | Input voltage | 2.9 | 32 | V | ||
| IQ | Operating quiescent current into Vin | Device nonswitching, VFB = 2 V | 0.5 | mA | ||
| ISD | Shutdown current | EN = GND | 2.7 | 10 | μA | |
| VUVLO | Undervoltage lockout threshold | VIN falling | 2.5 | 2.7 | V | |
| Vhys | Undervoltage lockout hysteresis | 120 | 140 | 160 | mV | |
| ENABLE AND REFERENCE CONTROL | ||||||
| VEN | EN threshold voltage | EN rising input | 0.9 | 1.08 | 1.30 | V |
| VENh | EN threshold hysteresis | 0.1 | 0.16 | 0.22 | V | |
| REN | EN pulldown resistor | 400 | 950 | 1600 | k? | |
| Toff | Shutdown delay, SS discharge | EN high to low | 1.0 | ms | ||
| VSYNh | SYN logic high voltage | 1.2 | ||||
| VSYNl | SYN logic low voltage | 0.4 | V | |||
| VOLTAGE AND CURRENT CONTROL | ||||||
| VREF | Voltage feedback regulation voltage | 1.204 | 1.229 | 1.254 | V | |
| IFB | Voltage feedback input bias current | 1.6 | 30 | nA | ||
| Isink | Comp pin sink current | VFB = VREF + 200 mV, VCOMP = 1 V | 42 | μA | ||
| Isource | Comp pin source current | VFB = VREF – 200 mV, VCOMP = 1 V | 42 | μA | ||
| VCCLP | Comp pin clamp voltage | High Clamp, VFB = 1 V Low Clamp, VFB = 1.5 V | 3.1 0.75 | V | ||
| VCTH | Comp pin threshold | Duty cycle = 0% | 1.04 | V | ||
| Gea | Error amplifier transconductance | 240 | 360 | 440 | μmho | |
| Rea | Error amplifier output resistance | 10 | MΩ | |||
| ?ea | Error amplifier crossover frequency | 500 | kHz | |||
| FREQUENCY | ||||||
| ?SW | Frequency | RFREQ = 480 kΩ | 75 | 94 | 130 | kHz |
| RFREQ = 80 kΩ | 460 | 577 | 740 | |||
| RFREQ = 40 kΩ | 920 | 1140 | 1480 | |||
| Dmax | Maximum duty cycle | VFB = 1 V, RFREQ = 80 kΩ | 89% | 96% | ||
| VFREQ | FREQ pin voltage | 1.25 | V | |||
| Tmin_on | Minimum on pulse width | RFREQ = 80 kΩ | 77 | ns | ||
| POWER SWITCH | ||||||
| RDS(ON) | N-channel MOSFET on-resistance | VIN = 5 V VIN = 3 V | 60 70 | 110 120 | mΩ | |
| ILN_NFET | N-channel leakage current | VDS = 25 V | 2.1 | μA | ||
| OCP and SS | ||||||
| ILIM | N-channel MOSFET current limit | D = Dmax | 5.25 | 6.6 | 8.25 | A |
| ISS | Soft-start bias current | Vss = 0 V | 6 | μA | ||
| THERMAL SHUTDOWN | ||||||
| Tshutdown | Thermal shutdown threshold | 165 | °C | |||
| Thysteresis | Thermal shutdown threshold hysteresis | 15 | °C | |||