ZHCSCL9A July 2014 – September 2021 TPS55340-EP
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Revision History
- 5 說(shuō)明（續(xù)）
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Switching Frequency
- 8.3.2 Voltage Reference and Setting Output Voltage
- 8.3.3 Soft Start
- 8.3.4 Slope Compensation
- 8.3.5 Overcurrent Protection and Frequency Foldback
- 8.3.6 Enable and Thermal Shutdown
- 8.3.7 Undervoltage Lockout (UVLO)
- 8.3.8 Minimum On-Time and Pulse Skipping
- 8.3.9 Layout Considerations
- 8.3.10 Thermal Considerations
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Applications
- 9.2.1
Boost Converter Application
- 9.2.1.1 Design Requirements
- 9.2.1.2
Detailed Design Procedure
- 9.2.1.2.1 Selecting the Switching Frequency (R4)
- 9.2.1.2.2 Determining the Duty Cycle
- 9.2.1.2.3 Selecting the Inductor (L1)
- 9.2.1.2.4 Computing the Maximum Output Current
- 9.2.1.2.5 Selecting the Output Capacitor (C8 to C10)
- 9.2.1.2.6 Selecting the Input Capacitors (C2, C7)
- 9.2.1.2.7 Setting Output Voltage (R1, R2)
- 9.2.1.2.8 Setting the Soft-Start Time (C7)
- 9.2.1.2.9 Selecting the Schottky Diode (D1)
- 9.2.1.2.10 Compensating the Control Loop (R3, C4, C5)
- 9.2.1.3 Application Curves
- 9.2.2
SEPIC Converter Application
- 9.2.2.1 Design Requirements
- 9.2.2.2
Detailed Design Procedure
- 9.2.2.2.1 Selecting the Switching Frequency (R4)
- 9.2.2.2.2 Duty Cycle
- 9.2.2.2.3 Selecting the Inductor (L1)
- 9.2.2.2.4 Calculating the Maximum Output Current
- 9.2.2.2.5 Selecting the Output Capacitor (C8 to C10)
- 9.2.2.2.6 Selecting the Series Capacitor (C6)
- 9.2.2.2.7 Selecting the Input Capacitor (C2, C7)
- 9.2.2.2.8 Selecting the Schottky Diode (D1)
- 9.2.2.2.9 Setting the Output Voltage (R1, R2)
- 9.2.2.2.10 Setting the Soft-Start Time (C3)
- 9.2.2.2.11 MOSFET Rating Considerations
- 9.2.2.2.12 Compensating the Control Loop (R3, C4)
- 9.2.2.3 SEPIC Converter Application Curves
- 9.2.1
Boost Converter Application
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTE|16
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTE|16
訂購(gòu)信息
12.5 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |