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ZHCSBY9G July 2013 – June 2021 TPS54561

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DPR|10
- MPSS046C

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

DPR|10
- QFND434A

訂購(gòu)信息

6.5 Electrical Characteristics

T_J = –40°C to 150°C, V_IN = 4.5 V to 60 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
	Operating input voltage		4.5		60	V
	Internal undervoltage lockout threshold	Rising	4.1	4.3	4.48	V
	Internal undervoltage lockout threshold hysteresis			325		mV
	Shutdown supply current	EN = 0 V, 25°C, 4.5 V ≤ VIN ≤ 60 V		2.25	4.5	μA
	Operating: nonswitching supply current	FB = 0.9 V, T_A = 25°C		152	200	μA
ENABLE AND UVLO (EN PIN)
	Enable threshold voltage	No voltage hysteresis, rising and falling	1.1	1.2	1.3	V
	Input current	Enable threshold +50 mV		–4.6		μA
	Input current	Enable threshold –50 mV	–0.58	–1.2	-1.8	μA
	Hysteresis current		–2.2	–3.4	-4.5	μA
	Enable to COMP active	V_IN = 12 V, T_A = 25°C		540		μs
VOLTAGE REFERENCE
	Voltage reference		0.792	0.8	0.808	V
HIGH-SIDE MOSFET
	On-resistance	VIN = 12 V, BOOT-SW = 6 V		87	185	mΩ
ERROR AMPLIFIER
	Input current			50		nA
	Error amplifier transconductance (g_M)	–2 μA < I_COMP < 2 μA, V_COMP = 1 V		350		μMhos
	Error amplifier transconductance (g_M) during soft-start	–2 μA < I_COMP < 2 μA, V_COMP = 1 V, V_FB = 0.4 V		77		μMhos
	Error amplifier dc gain	V_FB = 0.8 V		10,000		V/V
	Min unity gain bandwidth			2500		kHz
	Error amplifier source/sink	V_(COMP) = 1 V, 100 mV overdrive		±30		μA
	COMP to SW current transconductance			17		A/V
CURRENT LIMIT
	Current limit threshold	All VIN and temperatures, Open Loop⁽¹⁾	6.3	7.5	8.8	A
		All temperatures, VIN = 12 V, Open Loop⁽¹⁾	6.3	7.5	8.3
		VIN = 12 V, T_A = 25°C, Open Loop⁽¹⁾	7.1	7.5	7.9
	Current limit threshold delay			60		ns
THERMAL SHUTDOWN
	Thermal shutdown			176		°C
	Thermal shutdown hysteresis			12		°C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
	RT/CLK high threshold			1.55	2	V
	RT/CLK low threshold		0.5	1.2		V
SOFT START AND TRACKING (SS/TR PIN)
	Charge current	V_SS/TR = 0.4 V		1.7		μA
	SS/TR-to-FB matching	V_SS/TR = 0.4 V		42		mV
	SS/TR-to-reference crossover	98% nominal		1.16		V
	SS/TR discharge current (overload)	FB = 0 V, V_SS/TR = 0.4 V		354		μA
	SS/TR discharge voltage	FB = 0 V		54		mV
POWER GOOD (PWRGD PIN)
	FB threshold for PWRGD low	FB falling		90		%
	FB threshold for PWRGD high	FB rising		93		%
	FB threshold for PWRGD low	FB rising		108		%
	FB threshold for PWRGD high	FB falling		106		%
	Hysteresis	FB falling		2.5		%
	Output high leakage	V_PWRGD = 5.5 V, T_A = 25°C		10		nA
	On resistance	I_PWRGD = 3 mA, V_FB < 0.79 V		45		Ω
	Minimum VIN for defined output	V_PWRGD < 0.5 V, I_PWRGD = 100 μA		0.9	2	V

(1) Open Loop current limit measured directly at the SW pin and is independent of the inductor value and slope compensation.