ZHCSCL8 July 2014 TPS54060-EP
PRODUCTION DATA.
- 1 特性
- 2 應用范圍
- 3 說明
- 4 簡化電路原理圖
- 5 修訂歷史記錄
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Fixed Frequency PWM Control
- 8.3.2 Slope Compensation Output Current
- 8.3.3 Low-Dropout Operation and Bootstrap Voltage (Boot)
- 8.3.4 Error Amplifier
- 8.3.5 Voltage Reference
- 8.3.6 Adjusting the Output Voltage
- 8.3.7 Enable and Adjusting UVLO
- 8.3.8 Slow Start/Tracking Pin (SS/TR)
- 8.3.9 Overload Recovery Circuit
- 8.3.10 Sequencing
- 8.3.11 Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
- 8.3.12 Overcurrent Protection and Frequency Shift
- 8.3.13 Selecting the Switching Frequency
- 8.3.14 How to Interface to RT/CLK Pin
- 8.3.15 Power Good (PWRGD Pin)
- 8.3.16 Overvoltage Transient Protection (OVTP)
- 8.3.17 Thermal Shutdown
- 8.3.18 Small Signal Model for Loop Response
- 8.3.19 Simple Small Signal Model for Peak Current Mode Control
- 8.3.20 Small Signal Model for Frequency Compensation
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Selecting the Switching Frequency
- 9.2.2.2 Output Inductor Selection (LO)
- 9.2.2.3 Output Capacitor
- 9.2.2.4 Catch Diode
- 9.2.2.5 Input Capacitor
- 9.2.2.6 Slow Start Capacitor
- 9.2.2.7 Bootstrap Capacitor Selection
- 9.2.2.8 UVLO Set Point
- 9.2.2.9 Output Voltage and Feedback Resistors Selection
- 9.2.2.10 Compensation
- 9.2.3 Application Curves
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械封裝和可訂購信息
12 器件和文檔支持
12.1 器件支持
12.1.1 第三方產品免責聲明
TI 發布的與第三方產品或服務有關的信息，不能構成與此類產品或服務或保修的適用性有關的認可，不能構成此類產品或服務單獨或與任何 TI 產品或服務一起的表示或認可。
12.2 Trademarks
Eco-mode, PowerPAD, SwitcherPro are trademarks of Texas Instruments.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.