ZHCSAK8J December 2003 – June 2022 TPS40054 , TPS40055 , TPS40057
PRODUCTION DATA
請參考 PDF 數據表獲取器件具體的封裝圖。
MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (VDS) applications. The turn-on is caused by the capacitor divider that is formed by CGD and CGS. High dv/dt conditions and drain-to-source voltage on the MOSFET causes current flow through CGD and causes the gate-to-source voltage to rise. If the gate-to-source voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large shoot-through currents. Therefore, the SR MOSFET should be chosen so that the QGD charge is smaller than the QGS charge.