ZHCSHQ0B October 2017 – September 2019 TPS27S100
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械、封裝和可訂購信息
封裝選項
機械數據 (封裝 | 引腳)
散熱焊盤機械數據 (封裝 | 引腳)
- PWP|14
訂購信息
7.3.4.7 Reverse Current Protection
Reverse current occurs in two conditions: short to supply and reverse polarity.
● When a short to the supply occurs, there is only reverse current through the body diode. IR(1) specifies the limit of the reverse current.
● In a reverse-polarity condition, there are reverse currents through the body diode and the device GND pin. IR(2) specifies the limit of the reverse current.
To protect the device, TI recommends two types of external circuitry.
● Adding a blocking diode. Both the IC and load are protected when in reverse polarity.
Figure 31. Reverse-Current External Protection, Method 1 ● Adding a GND network. The reverse current through the device GND is blocked. The reverse current through the FET is limited by the load itself. TI recommends a resistor in parallel with the diode as a GND network. The recommended selection are 1-kΩ resistor in parallel with an >100-mA diode. The reverse current protection diode in the GND network forward voltage should be less than 0.6 V in any circumstances. In addition a minimum resistance of 4.7 K is recommended on the I/O pins.
Figure 32. Reverse-Current External Protection, Method 2