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ZHCSDK9A March 2015 – April 2015 TPS22953 , TPS22954

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DSQ|10
- MPDS335B
DQC|10
- MPSS005A

散熱焊盤機械數據 (封裝 | 引腳)

DQC|10
- QFND196E

訂購信息

8 Specifications

8.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
V_IN	Input voltage range	–0.3	6	V
V_BIAS	Bias voltage range	–0.3	6	V
V_OUT	Output voltage range	–0.3	6	V
V_EN, V_SNS, V_PG	EN, SNS, and PG voltage range	–0.3	6	V
I_MAX	Maximum Continuous Switch Current, T_A = 70°C		5	A
I_PLS	Maximum Pulsed Switch Current, pulse <300µs, 2% duty cycle		7	A
T_J,MAX	Maximum junction temperature	Internally limited ⁽²⁾
T_stg	Storage temperature range	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) See TSD specification in Electrical Characteristics section and Thermal Considerations section.

8.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±750	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

8.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input voltage range	0.7	V_BIAS	V
V_BIAS	Bias voltage range	2.5	5.7	V
V_OUT	Output voltage range	0	5.7	V
V_EN, V_SNS, V_PG	EN, SNS, and PG voltage range	0	5.7	V
T_A⁽¹⁾	Operating free-air temperature range	–40	105	°C
T_J	Operating Junction Temperature	–40	125	°C

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature [T_J(max)], the maximum power dissipation of the device in the application [P_D(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θ_JA), as given by the following equation: T_A(max) = T_J(max) – (θ_JA × P_D(max))

8.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS22953/54		UNIT
THERMAL METRIC⁽¹⁾		DQC-10	DSQ-10	UNIT
R_θJA	Junction-to-ambient thermal resistance	65.2	63.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	73.9	81.6
R_θJB	Junction-to-board thermal resistance	25.5	34.1
ψ_JT	Junction-to-top characterization parameter	2	1.9
ψ_JB	Junction-to-board characterization parameter	25.4	34.5
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	8.5	7.9

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ TA ≤ 105 °C and the recommended V_BIAS voltage range of 2.5V to 5.7V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS	T_A	MIN	TYP	MAX	UNIT
VOLTAGE THRESHOLDS
V_EN	V_IH, Rising threshold	V_IN = 0.7V to V_BIAS	-40°C to 105°C	650	700	750	mV
V_EN	V_IL, Falling threshold	V_IN = 0.7V to V_BIAS	-40°C to 105°C	560	600	640	mV
V_SNS	V_IH, Rising threshold	V_IN = 0.7V to V_BIAS	-40°C to 105°C	465	515	565	mV
V_SNS	V_IL, Falling threshold	V_IN = 0.7V to V_BIAS	-40°C to 105°C	410	455	500	mV
TIMINGS
t_BLANK	Blanking time for EN and SNS	EN or SNS Rising	-40°C to 105°C		100		µs
t_DEGLITCH	Deglitch time for EN and SNS	EN or SNS Falling	-40°C to 105°C		5		µs
t_DIS	Output discharge time (TPS22954 Only)	C_L = 100 µF	-40°C to 105°C			10	ms
t_RESTART	Output Restart Time	SNS Falling	-40°C to 105°C		2		ms
THERMAL CHARACTERISTICS
T_SD	Thermal shutdown	Junction Temperature Rising	-	130	150	170	°C
TSD_HYS	Thermal shutdown hysteresis	Junction Temperature Falling	-		20		°C

8.6 Electrical Characteristics, V_BIAS = 5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ TA ≤ 105 °C and V_BIAS = 5V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7V to V_BIAS, V_EN= 5V		-40°C to 85°C	34	45	µA
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7V to V_BIAS, V_EN= 5V		-40°C to 105°C		50
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0V, V_IN = 0.7V to V_BIAS, V_EN = 0V		-40°C to 85°C	5	7	µA
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0V, V_IN = 0.7V to V_BIAS, V_EN = 0V		-40°C to 105°C		8	µA
I_{SD, IN}	Input shutdown current	V_EN = 0V, V_OUT = 0V	V_IN = 5.0V	-40°C to 85°C	0.02	4	µA
			V_IN = 5.0V	-40°C to 105°C		13
			V_IN = 3.3V	-40°C to 85°C	0.01	3
			V_IN = 3.3V	-40°C to 105°C		10
			V_IN = 1.8V	-40°C to 85°C	0.01	3
			V_IN = 1.8V	-40°C to 105°C		10
			V_IN = 1.2V	-40°C to 85°C	0.01	2
			V_IN = 1.2V	-40°C to 105°C		8
			V_IN = 0.7V	-40°C to 85°C	0.01	2
			V_IN = 0.7V	-40°C to 105°C		8
I_EN	EN pin input leakage current	V_EN = 0V to 5.7V		-40°C to 105°C		0.1	µA
I_SNS	SNS pin input leakage current	V_SNS≤ V_BIAS		-40°C to 105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA	V_IN = 5.0V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 3.3V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 1.8V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 1.5V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 1.2V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 0.7V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		25°C	15	28	Ω
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		-40°C to 105°C		30	Ω

8.7 Electrical Characteristics, V_BIAS = 3.3 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ TA ≤ 105 °C and V_BIAS = 3.3V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7V to V_BIAS, V_EN= 5V		-40°C to 85°C	19	35	µA
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7V to V_BIAS, V_EN= 5V		-40°C to 105°C		37
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0V, V_IN = 0.7V to V_BIAS, V_EN = 0V		-40°C to 85°C	4	6	µA
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0V, V_IN = 0.7V to V_BIAS, V_EN = 0V		-40°C to 105°C		7	µA
I_{SD, IN}	Input shutdown current	V_EN = 0V, V_OUT = 0V	V_IN = 3.3V	-40°C to 85°C	0.01	3	µA
			V_IN = 3.3V	-40°C to 105°C		10
			V_IN = 1.8V	-40°C to 85°C	0.01	3
			V_IN = 1.8V	-40°C to 105°C		10
			V_IN = 1.2V	-40°C to 85°C	0.01	2
			V_IN = 1.2V	-40°C to 105°C		8
			V_IN = 0.7V	-40°C to 85°C	0.01	2
			V_IN = 0.7V	-40°C to 105°C		8
I_EN	EN pin input leakage current	V_EN = 0V to 5.7V		-40°C to 105°C		0.1	µA
I_SNS	SNS pin input leakage current	V_SNS= 0V to V_BIAS		-40°C to 105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA	V_IN = 3.3V	25°C	15	21	mΩ
				-40°C to 85°C		24
				-40°C to 105°C		25
			V_IN = 1.8V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 1.5V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 1.2V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
			V_IN = 0.7V	25°C	14	20	mΩ
				-40°C to 85°C		23
				-40°C to 105°C		24
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		25°C	13	28	Ω
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		-40°C to 105°C		30	Ω

8.8 Electrical Characteristics, V_BIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ TA ≤ 105 °C and V_BIAS = 2.5V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7V to V_BIAS, V_EN= 5V		-40°C to 85°C	16	25	µA
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7V to V_BIAS, V_EN= 5V		-40°C to 105°C		27
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0V, V_IN = 0.7V to V_BIAS, V_EN = 0V		-40°C to 85°C	4	5	µA
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0V, V_IN = 0.7V to V_BIAS, V_EN = 0V		-40°C to 105°C		6	µA
I_{SD, IN}	Input shutdown current	V_EN = 0V, V_OUT = 0V	V_IN = 2.5V	-40°C to 85°C	0.01	3	µA
			V_IN = 2.5V	-40°C to 105°C		10
			V_IN = 1.8V	-40°C to 85°C	0.01	3
			V_IN = 1.8V	-40°C to 105°C		10
			V_IN = 1.2V	-40°C to 85°C	0.01	2
			V_IN = 1.2V	-40°C to 105°C		8
			V_IN = 0.7V	-40°C to 85°C	0.01	2
			V_IN = 0.7V	-40°C to 105°C		8
I_EN	EN pin input leakage current	V_EN = 0V to 5.7V		-40°C to 105°C		0.1	µA
I_SNS	SNS pin input leakage current	V_SNS= 0V to V_BIAS		-40°C to 105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA	V_IN = 2.5V	25°C	16	23	mΩ
				-40°C to 85°C		26
				-40°C to 105°C		27
			V_IN = 1.8V	25°C	15	22	mΩ
				-40°C to 85°C		25
				-40°C to 105°C		26
			V_IN = 1.5V	25°C	15	22	mΩ
				-40°C to 85°C		25
				-40°C to 105°C		26
			V_IN = 1.2V	25°C	15	22	mΩ
				-40°C to 85°C		24
				-40°C to 105°C		25
			V_IN = 0.7V	25°C	14	21	mΩ
				-40°C to 85°C		24
				-40°C to 105°C		25
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		25°C	12	28	Ω
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		-40°C to 105°C		30	Ω

8.9 Switching Characteristics, CT = 1000 pF

Refer to the timing test circuit in Figure 1 (unless otherwise noted) for references to external components used for the test condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up sequence where V_IN and V_BIAS are already in steady state condition before the EN terminal is asserted high.

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = 5V, V_EN = V_BIAS = 5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1265	µs
t_OFF	Turn-off time		6.0
t_R	V_OUT rise time		1492
t_F	V_OUT fall time		2.2
t_D	ON delay time		519
V_IN = 2.5V, V_EN = V_BIAS = 5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	813	µs
t_OFF	Turn-off time		6.1
t_R	V_OUT rise time		765
t_F	V_OUT fall time		2.2
t_D	ON delay time		430
V_IN= 0.7V, V_EN = V_BIAS = 5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	476	µs
t_OFF	Turn-off time		6.2
t_R	V_OUT rise time		245
t_F	V_OUT fall time		2.1
t_D	ON delay time		353
V_IN = 2.5V, V_EN = 5V, V_BIAS= 2.5V, T_A= 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	813	µs
t_OFF	Turn-off time		4.9
t_R	V_OUT rise time		765
t_F	V_OUT fall time		2.2
t_D	ON delay time		430
V_IN = 0.7V, V_EN = 5V, V_BIAS = 2.5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	476	µs
t_OFF	Turn-off time		6.1
t_R	V_OUT rise time		245
t_F	V_OUT fall time		2.1
t_D	ON delay time		353

8.10 Switching Characteristics, CT = 0 pF

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = 5V, V_EN = V_BIAS = 5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	235	µs
t_OFF	Turn-off time		6.0
t_R	V_OUT rise time		140
t_F	V_OUT fall time		2.2
t_D	ON delay time		165
V_IN = 2.5V, V_EN = V_BIAS = 5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	200	µs
t_OFF	Turn-off time		6
t_R	V_OUT rise time		79
t_F	V_OUT fall time		2.1
t_D	ON delay time		160
V_IN= 0.7V, V_EN = V_BIAS = 5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	170	µs
t_OFF	Turn-off time		6
t_R	V_OUT rise time		32
t_F	V_OUT fall time		2
t_D	ON delay time		154
V_IN = 2.5V, V_EN = 5V, V_BIAS= 2.5V, T_A= 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	200	µs
t_OFF	Turn-off time		6
t_R	V_OUT rise time		79
t_F	V_OUT fall time		2.1
t_D	ON delay time		160
V_IN = 0.7V, V_EN = 5V, V_BIAS = 2.5V, T_A = 25°C
t_ON	Turn-on time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	170	µs
t_OFF	Turn-off time		6
t_R	V_OUT rise time		32
t_F	V_OUT fall time		2
t_D	ON delay time		154

TPS22954 TPS22953 Timing_Test_Circuit.gif

A. Rise and fall times of the control signal is 100 ns.

Figure 1. Timing Test Circuit

Figure 2. Timing Waveforms

8.11 Typical DC Characteristics

V_IN = 1.8 V	V_EN = 5.7V	V_OUT = 0V

Figure 3. I_Q,BIAS vs V_BIAS

V_IN = 1.8 V	V_EN = 0V	V_OUT = 0V

Figure 5. I_SD,BIAS vs V_BIAS

V_BIAS = 2.5 V	Iout = –200 mA	V_EN = 5V

Figure 7. R_ON vs Temperature, V_BIAS = 2.5V

V_BIAS = 2.5 V	Iout = –200 mA	V_EN = 5V

Figure 9. R_ON vs V_IN, V_BIAS = 2.5 V

V_BIAS = 5 V	Iout = –200 mA	V_EN = 5V

Figure 11. R_ON vs V_IN, V_BIAS = 5 V

V_BIAS = 2.5 V	V_EN = 5V

Figure 13. R_ON vs I_OUT, V_BIAS = 2.5 V

V_BIAS = 5 V	V_EN = 5V

Figure 15. R_ON vs I_OUT, V_BIAS = 5 V

V_BIAS = 3.3 V	V_IN = V_OUT	V_EN = 0V

Figure 17. R_PD vs V_OUT, V_BIAS = 3.3 V

V_BIAS = 5 V	V_EN = 5.7V	V_OUT = 0V

Figure 4. I_Q,BIAS vs V_IN

V_BIAS = 5 V	V_EN = 0V	V_OUT = 0V

Figure 6. I_SD,IN vs V_IN

V_BIAS = 3.3 V	Iout = –200 mA	V_EN = 5V

Figure 8. R_ON vs Temperature, V_BIAS = 3.3 V

V_BIAS = 3.3 V	Iout = –200 mA	V_EN = 5V

Figure 10. R_ON vs V_IN, V_BIAS = 3.3 V

T_A= 25°C	Iout = –200 mA	V_EN = 5V

Figure 12. R_ON vs V_IN

V_BIAS = 3.3 V	V_EN = 5V

Figure 14. R_ON vs I_OUT, V_BIAS = 3.3 V

V_BIAS = 2.5 V	V_IN = V_OUT	V_EN = 0V

Figure 16. R_PD vs V_OUT, V_BIAS = 2.5 V

V_BIAS = 5 V	V_IN = V_OUT	V_EN = 0V

Figure 18. R_PD vs V_OUT, V_BIAS = 5 V

8.12 Typical Switching Characteristics

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = low to high

Figure 19. t_R vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = high to low

Figure 21. t_F vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = low to high

Figure 23. t_ON vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = high to low

Figure 25. t_OFF vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = low to high

Figure 27. t_D vs V_IN , V_BIAS = 2.5 V

	V_IN = 2.5 V	CT = 1000 pF	V_EN = low to high

Figure 29. t_R vs V_BIAS

V_BIAS = 5 V	CT = 1000 pF	V_EN = low to high

Figure 20. t_Rvs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN = high to low

Figure 22. t_F vs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN = low to high

Figure 24. t_ON vs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN = high to low

Figure 26. t_OFF vs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN = low to high

Figure 28. t_Dvs V_IN , V_BIAS= 5 V

V_IN = 0.7 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 30. Turn On Waveform, V_BIAS = 2.5 V

V_IN = 0.7 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 32. Turn On Waveform, V_BIAS = 5 V

V_IN = 2.5 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 34. Turn On Waveform, V_BIAS = 2.5 V

V_IN = 2.5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 36. Turn On Waveform, V_BIAS = 5 V

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 38. Turn On Waveform, V_BIAS = 5 V

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 40. Turn On Waveform, V_BIAS = 5 V

TPS22954 TPS22953 On_3p3V_5V_No_Load.png

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = Open

Figure 42. Turn On Waveform, No Load

TPS22954 TPS22953 On_3.3V_5V_Heavy_Load.png

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 1 Ω

Figure 44. Turn On Waveform, Heavy Load

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 100 µF	R_L = 10 Ω

Figure 46. PG Response to EN Falling (t_DEGLITCH)

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 100 µF	R_L = 10 Ω

Figure 48. PG Response to SNS Rising (t_BLANK)

V_IN = 0.7 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 31. Turn Off Waveform, V_BIAS = 2.5 V

V_IN = 0.7 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 33. Turn Off Waveform, V_BIAS = 5 V

V_IN = 2.5 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 35. Turn Off Waveform, V_BIAS = 2.5 V

V_IN = 2.5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 37. Turn Off Waveform, V_BIAS = 5 V

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 39. Turn Off Waveform, V_BIAS = 5 V

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 41. Turn Off Waveform, V_BIAS = 5 V

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = Open

Figure 43. Turn On Waveform, No Load

TPS22954 TPS22953 On_5V_5V_Heavy_Load.png

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 1 Ω

Figure 45. Turn On Waveform, Heavy Load

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 100 µF	R_L = 10 Ω

Figure 47. PG Response to SNS Falling with Auto-Restart (t_DEGLITCH and t_RESTART)

	V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
	C_IN = 1 µF	C_L = 100 µF	R_L = None

Figure 49. Quick Output Discharge of 100µF Load (t_DIS)