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ZHCSSK0P April 2004 – August 2024 TPS2041B , TPS2042B , TPS2043B , TPS2044B , TPS2051B , TPS2052B , TPS2053B , TPS2054B

PRODUCTION DATA

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

D|8
- MSOI002K
DGN|8
- MPDS046G
DBV|5
- MPDS018T

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

DGN|8
- PPTD362B

訂購信息

6.5 Electrical Characteristics

over recommended operating junction temperature range, V_I(IN) = 5.5 V, I_O = 0.5 A, V_I(/ENx) = 0 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS⁽¹⁾			MIN	TYP	MAX	UNIT
POWER SWITCH
r_DS(on)	Static drain-source on-state resistance, 5-V operation and 3.3-V operation	V_I(IN) = 5 V or 3.3 V, I_O = 0.5 A, -40°C ≤ T_J ≤ 125°C		D and DGN packages		70	135	m?
		V_I(IN) = 5 V or 3.3 V, I_O = 0.5 A, -40°C ≤ T_J ≤ 125°C		DBV package only		95	140	m?
	Static drain-source on-state resistance, 2.7-V operation	V_I(IN) = 2.7 V, I_O = 0.5 A, –40°C ≤ T_J ≤ 125°C		D and DGN packages		75	150	m?
	Static drain-source on-state resistance, 5-V operation	V_I(IN) = 5 V, I_O = 1 A, OUT1 and OUT2 connected, 0°C ≤ T_J ≤ 70°C		DGN package, TPS2042B/52B			49	m?
t_r	Rise time, output	V_I(IN) = 5.5 V	C_L = 1 μF, R_L = 10 ?	T_J = 25°C		0.6	1.5	ms
t_r	Rise time, output	V_I(IN) = 2.7 V				0.4	1
t_f	Fall time, output	V_I(IN) = 5.5 V			0.05		0.5
t_f	Fall time, output	V_I(IN) = 2.7 V			0.05		0.5
ENABLE INPUT EN AND ENx
V_IH	High-level input voltage	2.7 V ≤ V_I(IN) ≤ 5.5 V			2			V
V_IL	Low-level input voltage	2.7 V ≤ V_I(IN) ≤ 5.5 V					0.8	V
I_I	Input current	V_{I( ENx)} = 0 V or 5.5 V			–0.5		0.5	μA
t_on	Turnon time	C_L = 100 μF, R_L = 10 ?					3	ms
t_off	Turnoff time	C_L = 100 μF, R_L = 10 ?					10	ms
CURRENT LIMIT
I_OS	Short-circuit output current	V_I(IN) = 5 V, OUT connected to GND, device enabled into short-circuit		T_J = 25°C	0.75	1	1.25	A
				–40°C ≤ T_J ≤ 125°C	0.7	1	1.3
		V_I(IN) = 5 V, OUT1 and OUT2 connected to GND, device enabled into short-circuit, measure at IN		0°C ≤ T_J ≤ 70°C TPS2042B/52B	1.5
I_OC⁽²⁾	Overcurrent trip threshold	V_IN = 5 V, 100 A/s	TPS2042B TPS2052B (DRB package only)		I_OS	1.55	2	A
SUPPLY CURRENT (TPS2041B, TPS2051B)
Supply current, low-level output		No load on OUT, V_{I( ENx)} = 5.5 V, or V_I(ENx) = 0 V		T_J = 25°C		0.5	1	μA
Supply current, low-level output		No load on OUT, V_{I( ENx)} = 5.5 V, or V_I(ENx) = 0 V		-40°°C ≤ T_J ≤ 125°C		0.5	5	μA
Supply current, high-level output		No load on OUT, V_{I( ENx)} = 0 V, or V_I(ENx) = 5.5 V		T_J = 25°C		75	95	μA
Supply current, high-level output		No load on OUT, V_{I( ENx)} = 0 V, or V_I(ENx) = 5.5 V		–40°C ≤ T_J ≤ 125°C		75	95	μA
Leakage current		OUT connected to ground, V_{I( ENx)} = 5.5 V, or V_I(ENx) = 0 V		–40°C ≤ T_J ≤ 125°C		1		μA
Reverse leakage current		V_I(OUTx) = 5.5 V, IN = ground		T_J = 25°C		0		μA
SUPPLY CURRENT (TPS2042B, TPS2052B)
Supply current, low-level output		No load on OUT, V_{I( ENx)} = 5.5 V		T_J = 25°C		0.5	1	μA
Supply current, low-level output		No load on OUT, V_{I( ENx)} = 5.5 V		–40°C ≤ T_J ≤ 125°C		0.5	5	μA
Supply current, high-level output		No load on OUT, V_{I( ENx)} = 0 V	TPS20x2B (DRB package only)	T_J = 25°C		50	70	μA
			TPS20x2B (DRB package only)	–40°C ≤ T_J ≤ 125°C		50	90	μA
			TPS20x2B (D and DGN packages)	T_J = 25°C		95	120	uA
			TPS20x2B (D and DGN packages)	–40°C ≤ T_J ≤ 125°C		95	120	uA
Leakage current		OUT connected to ground, V_{I( ENx)} = 5.5 V		–40°C ≤ T_J ≤ 125°C		1		μA
Reverse leakage current		V_I(OUTx) = 5.5 V, IN = ground		T_J = 25°C		0.2		μA
SUPPLY CURRENT (TPS2043B, TPS2053B)
Supply current, low-level output		No load on OUT, V_I(ENx) = 0 V		T_J = 25°C		0.5	2	μA
Supply current, low-level output		No load on OUT, V_I(ENx) = 0 V		–40°C ≤ T_J ≤ 125°C		0.5	10	μA
Supply current, high-level output		No load on OUT, V_I(ENx) = 5.5 V		T_J = 25°C		65	90	μA
Supply current, high-level output		No load on OUT, V_I(ENx) = 5.5 V		–40°C ≤ T_J ≤ 125°C		65	110	μA
Leakage current		OUT connected to ground, V_I(ENx) = 0 V		–40°C≤ T_J ≤ 125°C		1		μA
Reverse leakage current		V_I(OUTx) = 5.5 V, INx = ground		T_J = 25°C		0.2		μA
SUPPLY CURRENT (TPS2044B, TPS2054B)
Supply current, low-level output		No load on OUT, V_{I( ENx)} = 5.5 V, or V_I(ENx) = 0 V		T_J = 25°C		0.5	2	μA
Supply current, low-level output		No load on OUT, V_{I( ENx)} = 5.5 V, or V_I(ENx) = 0 V		–40°C ≤ T_J ≤ 125°C		0.5	10	μA
Supply current, high-level output		No load on OUT, V_{I( ENx)} = 0 V, or V_I(ENx) = 5.5 V		T_J = 25°C		75	110	μA
Supply current, high-level output		No load on OUT, V_{I( ENx)} = 0 V, or V_I(ENx) = 5.5 V		–40°C ≤ T_J ≤ 125°C		75	140	μA
Leakage current		OUT connected to ground, V_{I( ENx)} = 5.5 V, or V_I(ENx) = 0 V		–40°C≤ T_J ≤ 125°C		1		μA
Reverse leakage current		V_I(OUTx) = 5.5 V, INx = ground		T_J = 25°C		0.2		μA
UNDERVOLTAGE LOCKOUT (TPS20x3BD, TPS20x4BD, & TPS20x2BDRB)
Low-level input voltage, IN, INx					2		2.5	V
Hysteresis, IN, INx		T_J = 25°C				75		mV
UNDERVOLTAGE LOCKOUT (TPS20x1B & TPS20x2B; D/DBV/DGN packages)
Low-level input voltage, IN, INx					2		2.6	V
Hysteresis, IN, INx		T_J = 25°C				75		mV
OVERCURRENT OC and OCx
Output low voltage, V_OL(/OCx)		I_{O( OCx)} = 5 mA					0.4	V
Off-state current		V_{O( OCx)} = 5 V or 3.3 V					1	μA
OC deglitch		OCx assertion or deassertion			4	8	15	ms
THERMAL SHUTDOWN⁽³⁾
Thermal shutdown threshold					135			°C
Recovery from thermal shutdown					125			°C
Hysteresis						10		°C

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

(2) TPS20x1B and TPS20x2B devices in the D, DGN, and DBV packages do not have overcurrent trip thresholds. Current is limited to I_OS under different test condition. Check Section 8.3.7 for more details.

(3) The thermal shutdown only reacts under overcurrent conditions.