ZHCSAT5F January 2013 – January 2015 TPD4S214
PRODUCTION DATA.
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Tstg | Storage temperature range | –40 | 85 | °C | |
| VOTG_IN, ADJ, EN | Input voltage | –0.5 | 7 | V | |
| VBUS | Output voltage to USB connector | –7 | 30 | V | |
| FLT, DET | Output voltage | –0.5 | 7 | V | |
| Input clamp current | VI < 0 | –50 | mA | ||
| IOUT Continuous current through FLT and DET output | 10 | mA | |||
| IGND Continuous current through GND | 100 | mA | |||
| TJ(max) maximum junction temperature | –65 | 150 | °C | ||
| D+, D-, ID, VBUS pins | IEC 61000-4-2 Contact Discharge at 25°C | ±15 | kV | ||
| D+, D-, ID, VBUS pins | IEC 61000-4-2 Air-gap Discharge at 25°C | ±15 | kV | ||
| D+, D-, ID pins | Peak Pulse Current (tp = 8/20 μs) at 25°C | 7.8 | A | ||
| D+, D-, ID pins | Peak Pulse Power (tp = 8/20 μs) at 25°C | 84 | W | ||
| VALUE | UNIT | |||||
|---|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V | ||
| Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±500 | |||||
| IEC 61000-4-2 Contact Discharge | D+, D-, ID, VBUS Pins | ±15000 | V | |||
| IEC 61000-4-2 Air-gap Discharge | ||||||
| MIN | TYP | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| TA | Operating free-air temperature | -40 | 85 | °C | ||
| VIH | High-level input voltage EN | 1.2 | V | |||
| VIL | Low-level input voltage EN | 0.4 | V | |||
| tEN | EN ramp rate for proper turn on | Valid ramp rate is between 10 µs and 100 ms, rising and falling | 0.01 | 100 | ms | |
| tUVLO_SLEW | VOTG_IN ramp rate for proper UVLO operation | Valid ramp rate is between 10 µs and 100 ms, rising and falling | 0.01 | 100 | ms | |
| tOVLO_SLEW | VBUS ramp rate for proper OVLO operation | Valid ramp rate is between 10 µs and 100 ms, rising and falling | 0.01 | 100 | ms | |
| TA_VBUS_ATT | Time to detect VBUS device attachment and turn on DET | 200 | ms | |||
| THERMAL METRIC(1) | TPD4S214 | UNIT | |
|---|---|---|---|
| YFF | |||
| 12 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 89.1 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 0.5 | |
| RθJB | Junction-to-board thermal resistance | 40.0 | |
| ψJT | Junction-to-top characterization parameter | 3.0 | |
| ψJB | Junction-to-board characterization parameter | 39.0 | |
| PARAMETER | TEST CONDITIONS | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| TSHDN+ | Shutdown temp rising | 141 | ºC | ||
| TSHDN– | Shutdown temp falling | 125 | ºC | ||
| THYST | Thermal-shutdown Hysteresis | 16 | ºC | ||
| PMAX | Maximum power dissipation | VOTG_IN = 5 V, Rload = 5 Ω, EN = 5 V, RADJ = 75 KΩ | 0.16 | W | |
| TJMAX | Junction Temp at max power dissipation | 150 | ºC | ||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| IIL_EN | EN pin input leakage current | EN = 3.3 V | 1 | µA | ||
| IOL | FLT, DET pin output leakage current | FLT, DET = 3.6 V | 1 | µA | ||
| VOL_FLT | Low-level output voltage FLT | VBUS or VOTG_IN = 5 V or 0 V IOL = 100 µA | 100 | mV | ||
| VOL_DET | Low-level output voltage DET | VBUS and VOTG_IN = 5 V or 0 V IOL = 100 µA | 100 | mV | ||
| CEN | Enable capacitance | VBIAS = 1.8 V, f = 1 MHz, 30 mVpp ripple, VOTG_IN = 5 V | 4.5 | pF | ||
| VD | Diode forward voltage D+, D–, ID pins; lower clamp diode | IO = 8 mA | 0.95 | V | ||
| IL_D | Leakage current on D+, D–, ID Pins | D+, D–, ID = 3.3 V | 100 | nA | ||
| ΔCIO | Differential capacitance between the D+, D– lines | VBIAS = 1.8 V, f = 1 MHz, 30 mVpp ripple, VOTG_IN = 5 V | 0.04 | pF | ||
| CIO | Capacitance to GND for the D+, D– lines | VBIAS = 1.8 V, f = 1 MHz, 30 mVpp ripple, VOTG_IN = 5 V | 1.9 | pF | ||
| Capacitance to GND for the ID lines | 1.9 | |||||
| VBR | Breakdown voltage D+, D–, ID pins | Ibr = 1 mA | 6 | V | ||
| Breakdown voltage on VBUS | Ibr = 1 mA | 33 | V | |||
| RDYN | Dynamic on resistance D+, D–, ID clamps | 1 | Ω | |||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| INPUT UNDER-VOLTAGE LOCKOUT | ||||||
| VUVLO+ | Under-voltage lock-out, input power detected threshold rising | VOTG_IN increasing from 0 V to 5 V, No load on VBUS pin | 3.4 | 3.6 | 3.8 | V |
| VUVLO– | Under-voltage lock-out, input power detected threshold falling | VOTG_IN decreasing from 5 V to 0 V, No load on VBUS pin | 3.0 | 3.2 | 3.5 | V |
| VHYS-UVLO | Hysteresis on UVLO | Δ of VUVLO+ and VUVLO– | 260 | mV | ||
| TRUVLO | Recovery time from UVLO | VOTG_IN increasing from 0V to 5V, No load on VBUS pin; time from VOTG_IN = VUVLO+ to FLT toggles high |
18 | ms | ||
| TRESP_UVLO | Response time for UVLO | VOTG_IN decreasing from 5V to 0V, No load on VBUS pin; time from VOTG_IN = VUVLO– to FLT toggles low |
0.18 | µs | ||
| OUTPUT OVERVOLTAGE LOCKOUT | ||||||
| VOVP+ | OVLO rising threshold | Both VOTG_IN and VBUS increasing from 5 V to 7 V | 5.55 | 6.15 | 6.45 | V |
| VOVP– | OVLO falling threshold | Both VOTG_IN and VBUS decreasing from 7 V to 5 V | 5.4 | 6 | 6.3 | V |
| VHYS-OVP | Hysteresis on OVLO | Δ of VUVLO+ and VUVLO– | 100 | mV | ||
| TROVLO | Recovery time from OVLO | Both VOTG_IN and VBUS decreasing from 7 V to 5 V, VOTG_IN = 5 V; time from VBUS = VOVP– to FLT toggles high |
9 | ms | ||
| TRESP_OVLO | Response time for OVLO | Both VOTG_IN and VBUS increasing from 5 V to 7 V, VOTG_IN = 5 V; time from VBUS = VOVP+ to FLT toggles low |
17 | µs | ||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VBUS_VALID– | Valid VBUS voltage detect | VBUS = 7 V to 0 V | 2.7 | 2.9 | 3 | V |
| VBUS_VALID+ | Valid VBUS voltage detect | VBUS = 0 V to 7 V | 5.3 | 5.4 | 5.6 | V |
| TDET_DELAY– | VBUS detect propagation delay– | VBUS 0 V to 4 V, 200 ns ramp; VBUS = VBUS_VALID– MIN to DET toggles high | 4.9 | µs | ||
| TDET_DELAY+ | VBUS detect propagation delay+ | VBUS 6 V to 4 V, 200 ns ramp; VBUS = VBUS_VALID+ MAX to DET toggles low | 1.8 | µs | ||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| RDS_ON | OTG switch resistance | TA = 25 °C, VBUS = 5 V, IOUT = 100 mA, RADJ = 75 kΩ(1) | 263 | 290 | mΩ | ||
| VDROP | OTG switch voltage drop | VBUS = 5 V, IOUT = 100 mA, RADJ = 75 kΩ | 12.6 | 29 | mV | ||
| IOTG_OFF_30V | Leakage current at 30V | Measured at VOTG_IN | VBUS = 30 V, EN = 5 V, VOTG_IN = 5 V | 6 | µA | ||
| VBUS = 30 V, EN = 5 V, VOTG_IN = 0 V | 11 | nA | |||||
| IOTG_OFF_2V | Leakage current at–2V | VBUS = -2 V, EN = 5 V, VOTG_IN = 5 V | 30 | µA | |||
| IOTG_OFF | Standby Leakage current | VBUS = 0 V, EN = 0 V, VOTG_IN = 5 V | 32 | µA | |||
| VBUS = 5 V, EN = 0 V, VOTG_IN = 0 V | 10 | nA | |||||
| IBUS_REV | Reverse Leakage current | VBUS = 5 V, EN = 5 V, VOTG_IN = 0V | 1 | nA | |||
| VBUS = 5.5 V, EN = 5 V, VOTG_IN = 5 V | 6 | µA | |||||
| TON | Turn-ON time | RL = 100 Ω, CL = 1 µF, RADJ = 75 kΩ | 16 | ms | |||
| TOFF_EN | Turn-OFF time | RL = 100 Ω, CL = 1 µF, RADJ = 75 kΩ, toggle EN | 80 | µs | |||
| TOFF_OTG | Turn-OFF time | RL = 100 Ω, CL = 1 µF, RADJ = 75 kΩ, toggle VOTG_IN | 0.5 | µs | |||
| TRISE | Output rise time | RL = 100 Ω, CL = 1 µF, RADJ = 75 kΩ | 137 | µs | |||
| TFALL | Output fall time | RL = 100 Ω, CL = 1 µF, RADJ = 75 kΩ | 1.6 | µs | |||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| IOCP | Current−limit threshold (maximum DC output current IOUT delivered to load) | VOTG_IN = 5 V, RLOAD = 2.0 Ω | RADJ = 226 kΩ(1) | 235 | 245 | 281 | mA |
| RADJ = 75 kΩ(1) | 735 | 792 | 830 | ||||
| RADJ = 62 kΩ(1) | 885 | 959 | 1005 | ||||
| RADJ = 45 kΩ(1) | 1128 | 1200 | 1363 | ||||
| TBLANK | Blanking time after enable | VOTG_IN = 5 V | RL = 1 Ω, CL = 1 µF, RADJ = 75 kΩ |
4 | ms | ||
| TDEGL | Deglitch time while enabled | VOTG_IN = 5 V, RL = 100 Ω, CL = 1 µF, RADJ = 75 kΩ, apply short to ground |
9.4 | ms | |||
| TDET_SC | Response time to short circuit | 10 | µs | ||||
| TREG | Short circuit regulation time | Hiccup pulse width; auto-retry time | 13 | ms | |||
| TOCP | Short circuit over current protection time | Hiccup pulse period | 153 | ms | |||
| VSHORT | Short circuit threshold | 4 | V | ||||
| IINRUSH | Inrush current during a startup | SeeFigure 23 under test configuration | RL = 100 Ω, CL = 22 µF, RADJ = 75 kΩ | 726 | mA | ||
| PARAMETER | TEST CONDITIONS | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|
| IVOTG_INON | High-level VOTG_IN operating current consumption | VOTG_IN = 5 V, No load on VBUS, EN = 5 V |
RADJ = 75 kΩ | 162 | 200 | µA |
| RADJ = 226 kΩ | 150 | 200 | µA | |||
















