ZHCSN54A May 2021 – December 2021 TPD1E01B04-Q1
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 10 nA | –3.6 | 3.6 | V | ||
| VBRF | Breakdown voltage, IO pin to GND | Measured as the maximum voltage before device snaps back into VHOLD voltage | 6.4 | V | |||
| VBRR | Breakdown voltage, GND to IO pin | –6.4 | V | ||||
| VHOLD | Holding voltage | IIO = 1 mA, TA = 25°C | 5 | 5.9 | 6.5 | V | |
| VCLAMP | Clamping voltage | IPP = 1 A, TLP, from IO to GND | 7 | V | |||
| IPP = 5 A, TLP, from IO to GND | 9.2 | ||||||
| IPP = 16 A, TLP, from IO to GND | 15 | ||||||
| IPP = 1 A, TLP, from GND to IO | 7 | ||||||
| IPP = 5 A, TLP, from GND to IO | 9.2 | ||||||
| IPP = 16 A, TLP, from GND to IO | 15 | ||||||
| ILEAK | Leakage current, IO to GND | VIO = ±2.5 V | 10 | nA | |||
| RDYN | Dynamic resistance | IO to GND | 0.57 | Ω | |||
| GND to IO | 0.57 | ||||||
| CL | Line capacitance | VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C | 0.2 | 0.23 | pF | ||