ZHCSE70D August 2015 – September 2017 TMDS181
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Power Supply Electrical Characteristics
- 6.6 TMDS Differential Input Electrical Characteristics
- 6.7 TMDS Differential Output Electrical Characteristics
- 6.8 DDC, I2C, HPD, and ARC Electrical Characteristics
- 6.9 Power-Up and Operation Timing Requirements
- 6.10 TMDS Switching Characteristics
- 6.11 HPD Switching Characteristics
- 6.12 DDC and I2C Switching Characteristics
- 6.13 Typical Characteristics
- 7 Parameter Measurement Information
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Reset Implementation
- 8.3.2 Operation Timing
- 8.3.3 Swap and Polarity Working
- 8.3.4 TMDS Inputs
- 8.3.5 TMDS Inputs Debug Tools
- 8.3.6 Receiver Equalizer
- 8.3.7 Input Signal Detect Block
- 8.3.8 Audio Return Channel
- 8.3.9 Transmitter Impedance Control
- 8.3.10 TMDS Outputs
- 8.3.11 Pre-Emphasis/De-Emphasis
- 8.4 Device Functional Modes
- 8.5 Register Maps
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)(2)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage(3) | VCC | –0.3 | 4 | V |
| VDD | –0.3 | 1.4 | ||
| Voltage | Main link input differential voltage (IN_Dx, IN_CLKx) IIN = 15mA | VCC - 0.75V | VCC + 0.3V | V |
| TMDS outputs ( OUT_Dx) | –0.3 | 4 | ||
| HPD_SRC, Vsadj, SDA_CTL, SCL_CTL, OE, A1, PRE_SEL, EQ_SEL/A0, I2C_EN/PIN, SIG_EN, TX_TERM_CTL, | –0.3 | 4 | ||
| HDP_SNK, SDA_SNK, SCL_SNK, SDA_SRC, SCL_SRC | –0.3 | 6 | ||
| Input Current IIN | Main link input current (IN_Dx, IN_CLKx) | 15 | mA | |
| Continuous power dissipation | See Thermal Information | |||
| Tstg | Storage temperature | –65 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.
(3) Tested in accordance with JEDEC Standard 22, Test Method A114-B
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| VCC | Supply voltage nominal value 3.3 V | 3.135 | 3.3 | 3.465 | V | |
| VDD | Supply voltage nominal value 1.2 V | 1.1 | 1.2 | 1.27 | V | |
| TCASE | Case temperature | 92.7 | °C | |||
| TA | Operating free-air temperature | TMDS181 | 0 | 85 | °C | |
| TMDS181I | –40 | 85 | °C | |||
| MAIN LINK DIFFERENTIAL PINS | ||||||
| VID_PP | Peak-to-peak input differential voltage | 75 | 1560 | mVpp | ||
| VIC | Input common mode voltage | VCC – 0.4 | VCC + 0.1 | V | ||
| dR | Data rate | 0.25 | 6 | Gbps | ||
| RVSADJ | TMDS compliant swing voltage bias resistor nominal | 4.5 | 7.06 | kΩ | ||
| CONTROL PINS | ||||||
| VI-DC | DC input voltage | Control pins | –0.3 | 3.6 | V | |
| VIL(1) | Low-level input voltage at PRE_SEL, EQ_SEL/A0, TX_TERM_CTL, SWAP/POL pins only | 0.3 | V | |||
| Low-level input voltage at OE | 0.8 | |||||
| VIM(1) | Mid-level input voltage at PRE_SEL, EQ_SEL/A0, TX_TERM_CTL, SWAP/POL pins only | 1 | 1.2 | 1.4 | V | |
| VIH(1) | High-level input voltage at PRE_SEL, EQ_SEL/A0, TX_TERM_CTL, SWAP/POL, OE(2) pins only | 2.6 | V | |||
| VOL | Low-level output voltage | 0.4 | V | |||
| VOH | High-level output voltage | 2.4 | V | |||
| IIH | High-level input current | –30 | 30 | µA | ||
| IIL | Low-level input current | –25 | 25 | µA | ||
| IOS | Short-circuit output current | –50 | 50 | mA | ||
| IOZ | High impedance output current | 10 | µA | |||
| ROEPU | Pullup resistance on OE pin | 150 | 250 | kΩ | ||
(1) These values are based upon a microcontroller driving the control pins. The pullup/pulldown/floating resistor configuration will set the internal bias to the proper voltage level which will not match the values shown here.
(2) This value is based upon a microcontroller driving the OE pin. A passive reset circuit using an external capacitor and the internal pullup resistor will set OE pin properly, but may have a different value than shown due to internal biasing.
6.4 Thermal Information
| THERMAL METRIC(1)(2) | TMDS181x | UNIT | |
|---|---|---|---|
| RGZ (VQFN) | |||
| 48 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 31.1 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 18.2 | °C/W |
| RθJB | Junction-to-board thermal resistance | 8.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.4 | °C/W |
| ψJB | Junction-to-board characterization parameter | 8.1 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 3.2 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Test conditions for ΨJB and ΨJT are clarified in the Semiconductor and IC Package Thermal Metrics.
6.5 Power Supply Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX(1) | UNIT | ||
|---|---|---|---|---|---|---|---|
| PD1(3)(4) | Device power dissipation (retimer operation) |
OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern, VI = 3.3 V, I2C_EN/PIN = L, PRE_SEL= NC, EQ_SEL= NC, SDA_CTL/CLK_CTL = 0 V |
800 | 900 | mW | ||
| PD2(3)(4) | Device power dissipation (redriver operation) |
OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V IN_Dx: VID_PP = 1200 mV, 2.97 Gbps TMDS pattern, VI = 3.3 V, I2C_EN/PIN = L, PRE_SEL= NC, EQ_SEL= H, SDA_CTL/CLK_CTL = 0 V |
500 | 600 | mW | ||
| PSD1(3)(4)(5) | Device power in standby | OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V, HPD = H, No valid input signal | 50 | 100 | mW | ||
| PSD2(3)(4)(5) | Device power in power down | OE = L, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V | 10 | 30 | mW | ||
| ICC1(3)(4) | VCC supply current (TMDS 6Gpbs retimer mode) | OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = NC, SDA_CTL/CLK_CTL = 0 V |
131 | 150 | mA | ||
| IDD1(3)(4) | VDD supply current (TMDS 6Gpbs retimer mode) | OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V IN_Dx: VID_PP = 1200 mV, 6 Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = NC, SDA_CTL/CLK_CTL = 0 V |
332 | 350 | mA | ||
| ICC2(3)(4) | VCC supply current (TMDS 6Gpbs redriver mode) | OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V IN_Dx: VID_PP = 1200 mV, 2.97 Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V |
92 | mA | |||
| IDD2(3)(4) | VDD supply current (TMDS 6Gpbs redriver mode) | OE = H, VCC= 3.3 V/3.465 V, VDD = 1.2 V/1.27 V IN_Dx: VID_PP = 1200 mV, 3.4 Gbps TMDS pattern I2C_EN/PIN = L, PRE_SEL = NC, EQ_CTL = H, SDA_CTL/CLK_CTL = 0 V |
187 | mA | |||
| ISD1(5) | Standby current | OE = H, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V, HPD = H: No valid signal on IN_CLK | 3.3 V rail(3) | 6 | 15 | mA | |
| 1.2 V rail | 40 | 50 | |||||
| ISD2(5) | Power-down current | OE = L, VCC = 3.3 V/3.465 V, VDD = 1.2 V/1.27 V | 3.3 V rail(3) | 2 | 5 | mA | |
| 1.2 V rail | 3.5 | 15 | |||||
(1) The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C temperature unless otherwise noted
(2) The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C temperature unless otherwise noted
(3) ICC is a direct result of the source design as the TMDS181x integrated receive termination resistor accounts for 85 to 110 mA.
(4) IDD is impacted by ARC usage. Connecting a 500 kΩ resistor to GND at SPDIF reduces the value by more than 20 mA
(5) The measurements were made with no active source connected.
6.6 TMDS Differential Input Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX(1) | UNIT | |
|---|---|---|---|---|---|---|
| DR_RX_DATA_RT | TMDS data lanes data rate (Retimer Mode) | 0.25 | 6 | Gbps | ||
| DR_RX_DATA_RD | TMDS data lanes data rate (Redriver Mode) | 0.25 | 3.4 | Gbps | ||
| DR_RX_CLK | TMDS clock lanes clock rate | 25 | 340 | MHz | ||
| tRX_DUTY | Input clock duty circle | 40% | 50% | 60% | ||
| tCLK_JIT | Input clock jitter tolerance | 0.3 | Tbit | |||
| tDATA_JIT | Input data jitter tolerance | Test the TTP2, see Figure 12 | 150 | ps | ||
| tRX_INTRA | Input intrapair skew tolerance | Test at TTP2 when DR = 1.6 Gbps, see Figure 12 | 112 | ps | ||
| tRX_INTER | Input interpair skew tolerance | 1.8 | ns | |||
| EQH(D) | Fixed EQ gain for data lane IN_D(0,1,2)n/p | EQ_SEL/A0 = H; fixed EQ gain, test at 6 Gbps | 15 | dB | ||
| EQL(D) | Fixed EQ gain for data lane IN_D(0,1,2)n/p | EQ_SEL/A0 = L; fixed EQ gain, test at 6 Gbps | 7.5 | dB | ||
| EQZ(D) | Adaptive EQ gain for data lane IN_D(0,1,2)n/p | EQ_SEL/A0 = NC; adaptive EQ (Retimer Mode Only) | 2 | 15 | dB | |
| EQ(c) | EQ gain for clock lane IN_CLKn/p | EQ_SEL/A0 = H,L,NC | 3 | dB | ||
| RINT | Input differential termination impedance | 85 | 100 | 115 | Ω | |
| VITERM | Input termination voltage | OE = H | 3.3 | 3.465 | V | |
(1) The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C unless otherwise noted
(2) The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C unless otherwise noted
6.7 TMDS Differential Output Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX(1) | UNIT | |
|---|---|---|---|---|---|---|
| VOH | Single-ended high level output voltage Data rate ≤1.65 Gbps |
PRE_SEL = NC; TX_TERM_CTL = H; OE = H; DR = 750 Mbps; VSadj = 7.06 kΩ; | VCC – 10 | VCC + 10 | V | |
| Single-ended high level output voltage Data rate >1.65 Gbps and <3.4 Gbps |
PRE_SEL = NC; TX_TERM_CTL = NC; OE = H; DR = 2.97 Gbps; VSadj = 7.06 kΩ; | VCC-200 | VCC + 10 | |||
| Single-ended high level output voltage Data rate >3.4 Gbps and < 6 Gbps(1) |
PRE_SEL = NC; TX_TERM_CTL = L; OE = H; DR = 6 Gbps; VSadj = 7.06 kΩ; | VCC – 400 | VCC + 10 | |||
| VOL | Single-ended low level output voltage Data rate ≤1.65 Gbps |
PRE_SEL = NC; TX_TERM_CTL = H; OE = H; DR = 750 Mbps; VSadj = 7.06 kΩ; | VCC – 600 | VCC – 400 | V | |
| Single-ended low level output voltage Data rate >1.65 Gbps and <3.4 Gbps |
PRE_SEL = NC; TX_TERM_CTL = NC; OE = H; DR = 2.97 Gbps; VSadj = 7.06 kΩ; | VCC – 700 | VCC – 400 | |||
| Single-ended low level output voltage Data rate >3.4 Gbps and < 6 Gbps(1) |
PRE_SEL = NC; TX_TERM_CTL = L; OE = H; DR = 6 Gbps; VSadj = 7.06 kΩ; | VCC – 1000 | VCC – 400 | |||
| VSWING_DA | Single-ended output voltage swing on data lane | PRE_SEL = NC; TX_TERM_CTL = H/NC/L; OE = H; DR = 270 Mbps/2.97/6 Gbps VSadj = 7.06 kΩ; | 400 | 500 | 600 | mV |
| VSWING_CLK | Single-ended output voltage swing on clock lane | PRE_SEL = NC; TX_TERM_CTL = H; OE = H; Data rate ≤ 3.4 Gbps; VSadj = 7.06 kΩ; | 400 | 500 | 600 | mV |
| PRE_SEL = NC; TX_TERM_CTL = NC; OE = H; Data rate > 3.4 Gbps; VSadj = 7.06 kΩ; | 200 | 300 | 400 | |||
| ΔVSWING | Change in single-end output voltage swing per 100 Ω ΔVSadj | 20 | mV | |||
| ΔVOCM(SS) | Change in steady state output common mode voltage between logic levels | –5 | 5 | mV | ||
| VOD(PP) | Output differential voltage before pre-emphasis | VSADJ = 7.06 kΩ; PRE_SEL = NC see Figure 10 | 800 | 1200 | mV | |
| VOD(SS) | Steady state output differential voltage | VSADJ = 7.06 kΩ; PRE_SEL = L, see Figure 11 | 600 | 1075 | mV | |
| VOD_range | Total TMDS data lanes output differential voltage for HDMI2.0. Retimer Mode Only See Figure 14 |
3.4 Gbps < Rbit ≤ 3.712 Gps TX_TERM_CTL = NC; PRE_SEL = NC; OE = H; VSadj = 7.06 kΩ; |
335 | mV | ||
| 3.712 Gbps < Rbit < 5.94 Gbps TX_TERM_CTL = NC; PRE_SEL = NC; OE = H; VSadj = 7.06 kΩ; |
–19.66 × (Rbit2) + (106.74 × Rbit) + 209.58 | |||||
| 5.94 Gbps ≤ Rbit ≤ 6.0 Gbps TX_TERM_CTL = NC; PRE_SEL = NC; OE = H; VSadj = 7.06 kΩ; |
150 | |||||
| IOS | Short-circuit current limit | Main link output shorted to GND | 50 | mA | ||
| ILEAK | Failsafe condition leakage current | VCC = 0 V; VDD = 0 V; TMDS Outputs pulled to 3.3 V through 50 Ω resistor; | 45 | μA | ||
| RTERM | Source termination resistance for HDMI2.0 | 75 | 150 | Ω | ||
(1) The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C unless otherwise noted
(2) The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C unless otherwise noted
6.8 DDC, I2C, HPD, and ARC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX(1) | UNIT | |
|---|---|---|---|---|---|---|
| DDC AND I2C | ||||||
| VI-DC | SCL/SDA_SNK, SCL/SDA_SRC DC input voltage | –0.3 | 5.5 | V | ||
| SCL/SDA_CTL, DC input voltage | –0.3 | 3.6 | V | |||
| VIL | SCL/SDA_SNK, SCL/SDA_SRC Low level input voltage | 0.3 x VCC | V | |||
| SCL/SDA_CTL Low level input voltage | 0.3 x VCC | V | ||||
| VIH | SCL/SDA_SNK, SCL/SDA_SRC high level input voltage | 3 | V | |||
| SCL/SDA_CTL high level input voltage | 0.7 x VCC | V | ||||
| VOL | SCL/SDA_CTL, SCL/SDA_SRC low level output voltage | I0 = 3 mA and VCC > 2 V | 0.4 | V | ||
| I0 = 3 mA and VCC < 2 V | 0.2 x VCC | |||||
| fSCL | SCL clock frequency fast I2C mode for local I2C control | 400 | kHz | |||
| Cbus | Total capacitive load for each bus line (DDC and local I2C pins) | 400 | pF | |||
| HPD | ||||||
| VIH | High-level input voltage | HPD_SNK | 2.1 | V | ||
| VIL | Low-level input voltage | HPD_SNK | 0.8 | V | ||
| VOH | High-level output voltage | IOH = –500 µA; HPD_SRC, | 2.4 | 3.6 | V | |
| VOL | Low-level output voltage | IOL = 500 µA; HPD_SRC, | 0 | 0.1 | V | |
| ILEAK | Failsafe condition leakage current | VCC = 0 V; VDD = 0 V; HPD_SNK = 5 V; | 40 | μA | ||
| IH_HPD | High-level input current | Device powered; VIH = 5 V; IH_HPD includes RpdHPD resistor current |
40 | µA | ||
| Device powered; VIL = 0.8 V; IL_HPD includes RpdHPD resistor current |
30 | |||||
| RpdHPD | HPD input termination to GND | VCC = 0 V | 150 | 190 | 220 | kΩ |
| SPDIF AND ARC | ||||||
| VEL | Operating DC voltage for single mode ARC output | Test at ARC_OUT, see Figure 22 | 0 | 5 | V | |
| VIN_DC | Operating DC voltage for SPDIF input | 0.05 | V | |||
| VSP_SW | Signal amplitude of SPDIF input | 0.2 | 0.5 | 0.6 | V | |
| VElSWING | Signal amplitude on the ARC output | Test at ARC_OUT, 55 Ω external termination resistor, see Figure 22 | 0.4 | 0.5 | 0.6 | V |
| CLK_ARC | Signal frequency on ARC | Test at ARC_OUT, see Figure 22 | 3.687 | 5.645 ±0.1% | 13.517 | MHz |
| Duty cycle | Output clock duty cycle | 45% | 50% | 55% | ||
| Data rate | SPDIF input DR | 7.373 | 11.29 | 27.034 | Mbps | |
| tEDGE | Rise/fall time for ARC output | From 10% to 90% voltage level | 0.4 | UI | ||
| R_IN_SPDIF | Input termination resistance for SPDIF | 75 | Ω | |||
| Rest | Single mode output termination resistance | 0.1 MHz to 128× the maximum frame rate | 36 | 55 | 75 | Ω |
(1) The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C unless otherwise noted
(2) The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C unless otherwise noted
6.9 Power-Up and Operation Timing Requirements
over operating free-air temperature range (unless otherwise noted) (1)
(1) See Operation Timing for more information
Figure 2. CDR Timing for TMDS181
6.10 TMDS Switching Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX(1) | UNIT | |
|---|---|---|---|---|---|---|
| REDRIVER MODE | ||||||
| dR | Data rate (redriver mode) | 250 | 3400 | Mbps | ||
| tPLH | Propagation delay time (low to high) | 250 | 600 | ps | ||
| tPHL | Propagation delay time (high to low) | 250 | 800 | ps | ||
| tT1(1.4b) | Transition time (rise and fall time); measured at 20% and 80% levels for data lanes. TMDS clock meets tT3 for all three times. | TX_TERM_CTL = NC; PRE_SEL = NC; OE = H; 1.48 Gbps and 2.97 Gbps data lines, 148 MHz and 297 MHz clock | 75 | ps | ||
| tT3 | TX_TERM_CTL = NC; PRE_SEL = NC; OE = H; 1.48 Gbps, 2.97 Gbps | 100 | ps | |||
| tSK_INTRA | Intra-pair output skew | Default setting for internal intra-pair skew adjust, TX_TERM_CTL = NC; PRE_SEL = NC; 1.48 Gbps, 2.97 Gbps; See Figure 8 | 40 | ps | ||
| tSK_INTER | Inter-pair output skew | Default setting for internal inter-pair skew adjust, TX_TERM_CTL = NC; PRE_SEL = NC; 1.48 Gbps, 2.97 Gbps; See Figure 8 | 100 | ps | ||
| tJITD1(1.4b) | Total output data jitter HDMI1.4b | DR = 2.97 Gbps, PRE_SEL = NC, EQ_SEL/A0 = NC ; . See Figure 12 at TTP3 | 0.2 | Tbit | ||
| tJITC1(1.4b) | Total output clock jitter | CLK = 25 MHz, 74.25 MHz, 75 MHz, 150 MHz, 297 MHz | 0.25 | Tbit | ||
| RETIMER MODE | ||||||
| dR | Data rate (retimer mode) | 0.25 | 6 | Gbps | ||
| dXVR | Automatic redriver to retimer crossover (when selected) | Measured with input signal applied = 200 mVpp | 0.75 | 1 | 1.25 | Gbps |
| fCROSSOVER | Crossover frequency hysteresis | 250 | MHz | |||
| PLLBW | Data retimer PLL bandwidth | Default loop bandwidth setting | 0.4 | 1 | MHz | |
| tACQ | Input clock frequency detection and retimer acquisition time | 180 | µs | |||
| IJT1 | Input clock jitter tolerance | Tested when data rate >1.0Gbps | 0.3 | Tbit | ||
| tT1(2.0) | Transition time (rise and fall time); measured at 20% and 80% levels for data lanes. TMDS clock meets tT3 for all three times. | TX_TERM_CTL = L; PRE_SEL = NC; 6 Gbps data lines, | 45 | ps | ||
| tT1 (1.4b) | TX_TERM_CTL = NC; PRE_SEL = NC; 1.48 Gbps and 2.97 Gbps data lines, 148 MHz and 297 MHz clock | 75 | ps | |||
| tT3 | TX_TERM_CTL = NC; PRE_SEL = NC; 1.48 Gbps, 2.97 Gbps, 6 Gbps data lines, 148 MHz, 297 MHz clock | 100 | ps | |||
| tDCD | OUT_CLK ± duty cycle | 40% | 50% | 60% | ||
| tSK_INTER | Inter-pair output skew | Default setting for internal inter-pair skew adjust, TX_TERM_CTL = NC; PRE_SEL = NC; 1.48 Gbps, 2.97 Gbps, 6 Gbps data lines, 148 MHz, 297 MHz clock; See Figure 8 | 0.2 | Tch | ||
| tSK_INTRA | Intra-pair output skew | Default setting for internal intra-pair skew adjust, TX_TERM_CTL = NC; PRE_SEL = NC; 1.48 Gbps, 2.97 Gbps, 6 Gbps data lines, 148 MHz, 297 MHz clock; See Figure 8 | 0.15 | Tbit | ||
| tJITC1(1.4b) | Total output clock jitter | CLK = 25 MHz, 74.25 MHz, 75 MHz, 150 MHz, 297 MHz | 0.25 | Tbit | ||
| tJITC1(2.0) | DR = 6 Gbps: CLK = 150 MHz | 0.3 | Tbit | |||
| tJITD2 | Total output data jitter See Figure 14 |
3.4 Gbps < Rbit ≤ 3.712 Gps TX_TERM_CTL = NC; PRE_SEL = NC; OE = H |
0.4 | Tbit | ||
| 3.712 Gbps < Rbit < 5.94 Gbps TX_TERM_CTL = NC; PRE_SEL = NC; OE = H |
–0.0332Rbit2 + 0.2312Rbit + 0.1998 | |||||
| 5.94 Gbps ≤ Rbit ≤ 6.0 Gbps TX_TERM_CTL = NC; PRE_SEL = NC; OE = H |
0.6 | |||||
(1) The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C unless otherwise noted
(2) The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C unless otherwise noted
6.11 HPD Switching Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX(1) | UNIT | |
|---|---|---|---|---|---|---|
| tPD(HPD) | Propagation delay from HPD_SNK to HPD_SRC; rising edge and falling edge(1) | See Figure 16; not valid during switching time | 40 | 120 | ns | |
| tT(HPD) | HPD logical disconnected timeout | See Figure 17 | 2 | ms | ||
(1) The maximum rating is simulated at 3.465 V VCC and 1.27 V VDD and at 85°C unless otherwise noted
(2) The typical rating is simulated at 3.3 V VCC and 1.2 V VDD and at 27°C unless otherwise noted
6.12 DDC and I2C Switching Characteristics
over operating free-air temperature range (unless otherwise noted) (1)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| tr | Rise time of both SDA and SCL signals | VCC = 3.3 V | 300 | ns | ||
| tf | Fall time of both SDA and SCL signals | 300 | ns | |||
| tHIGH | Pulse duration, SCL high | 0.6 | μs | |||
| tLOW | Pulse duration, SCL low | 1.3 | μs | |||
| tSU1 | Setup time, SDA to SCL | 100 | ns | |||
| tST, STA | Setup time, SCL to start condition | 0.6 | μs | |||
| tHD,STA | Hold time, start condition to SCL | 0.6 | μs | |||
| tST,STO | Setup time, SCL to stop condition | 0.6 | μs | |||
| t(BUF) | Bus free time between stop and start condition | 1.3 | μs | |||
| tPLH1 | Propagation delay time, low-to-high-level output | Source to sink: 100kbps pattern; Cb(Sink) = 400 pF(1); see Figure 20 | 360 | ns | ||
| tPHL1 | Propagation delay time, high-to-low-level output | 230 | ns | |||
| tPLH2 | Propagation delay time, low-to-high-level output | Sink to source: 100kbps pattern; Cb(Source) = 100 pF(1); see Figure 21 | 250 | ns | ||
| tPHL2 | Propagation delay time, high-to-low-level output | 200 | ns | |||
(1) Cb = total capacitance of one bus line in pF.
6.13 Typical Characteristics
