ZHCSHZ4D April 2018 – October 2023 TLV758P
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Pin Configuration and Functions
- 5 Specifications
- 6 Detailed Description
- 7 Application and Implementation
- 8 Device and Documentation Support
- 9 Revision History
- 10Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DRV|6
訂購(gòu)信息
7.1.5 Reverse Current
As with most LDOs, excessive reverse current can damage this device.
Reverse current flows through the body diode on the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device, as a result of one of the following conditions:
- Degradation caused by electromigration
- Excessive heat dissipation
- Potential for a latch-up condition
Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT > VIN + 0.3 V:
- If the device has a large COUT and the input supply collapses with little or no load current
- The output is biased when the input supply is not established
- The output is biased above the input supply
If reverse current flow is expected in the application, external protection must be used to protect the device. Figure 7-4 shows one approach of protecting the device.
Figure 7-4 Example
Circuit for Reverse Current Protection Using a Schottky Diode