SBVS305 March 2017 TLV703
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DBV|5
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating junction temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Voltage(2) | IN, EN, OUT | –0.3 | 6 | V |
| Current (source) | OUT | Internally limited | ||
| Output short-circuit duration | Indefinite | |||
| Total continuous power dissipation | See Thermal Information | |||
| Temperature | Operating virtual junction, TJ | –55 | 150 | °C |
| Storage, Tstg | –55 | 150 | ||
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.
(2) All voltages are with respect to the network ground terminal.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Input voltage range | 2 | 5.5 | V | |
| VOUT | Output voltage range | 1.2 | 4.8 | V | |
| IOUT | Output current | 0 | 300 | mA | |
6.4 Thermal Information
| THERMAL METRIC(1) | TLV703 | UNIT | |
|---|---|---|---|
| DBV (SOT-23) | |||
| 5 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 254.1 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 143.9 | °C/W |
| RθJB | Junction-to-board thermal resistance | 58.0 | °C/W |
| ψJT | Junction-to-top characterization parameter | 25.3 | °C/W |
| ψJB | Junction-to-board characterization parameter | 56.6 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
at VIN = VOUT(nom) + 0.5 V or 2 V (whichever is greater), IOUT = 10 mA, VEN = 0.9 V, COUT = 1 μF, and TJ = –40°C to +125°C (unless otherwise noted); typical values are at TJ = 25°C| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
|---|---|---|---|---|---|---|---|---|
| VIN | Input voltage range | 2 | 5.5 | V | ||||
| VOUT | DC output accuracy | –40°C ≤ TJ ≤ 125°C | –2% | 0.5% | 2% | |||
| ΔVOUT(ΔVIN) | Line regulation | VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA |
1 | 5 | mV | |||
| ΔVOUT(ΔIOUT) | Load regulation | 0 mA ≤ IOUT ≤ 300 mA | 1 | 15 | mV | |||
| VDO | Dropout voltage(1) | VIN = 0.98 × VOUT(nom), IOUT = 300 mA | 260 | 375 | mV | |||
| ICL | Output current limit | VOUT = 0.9 × VOUT(nom) | 320 | 500 | 860 | mA | ||
| IGND | Ground pin current | IOUT = 0 mA | 35 | 55 | µA | |||
| IOUT = 300 mA, VIN = VOUT + 0.5 V | 370 | |||||||
| ISHDN | Ground pin current (shutdown) | VEN ≤ 0.4 V, VIN = 2 V | 400 | nA | ||||
| VEN ≤ 0.4 V, 2 V ≤ VIN ≤ 4.5 V, TJ = –40°C to +85°C |
1 | 2 | µA | |||||
| PSRR | Power-supply rejection ratio | VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA, f = 1 kHz |
68 | dB | ||||
| Vn | Output noise voltage | BW = 100 Hz to 100 kHz, VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA |
48 | µVRMS | ||||
| tSTR | Start-up time(2) | COUT = 1 µF, IOUT = 300 mA | 100 | µs | ||||
| VEN(high) | Enable pin high (enabled) | 0.9 | VIN | V | ||||
| VEN(low) | Enable pin low (disabled) | 0 | 0.4 | V | ||||
| IEN | Enable pin current | VIN = VEN = 5.5 V | 0.04 | µA | ||||
| UVLO | Undervoltage lockout | VIN rising | 1.9 | V | ||||
| Tsd | Thermal shutdown temperature | Shutdown, temperature increasing | 165 | °C | ||||
| Reset, temperature decreasing | 145 | |||||||
| TJ | Operating junction temperature | –40 | 125 | °C | ||||
(1) VDO is measured for devices with VOUT(nom) ≥ 2.35 V.
(2) Start-up time = time from EN assertion to 0.98 × VOUT(nom).
6.6 Typical Characteristics
over operating temperature range (TJ = –40°C to +125°C), VIN = VOUT(nom) + 0.5 V or 2 V, whichever is greater, IOUT = 10 mA, VEN = VIN, COUT = 1 μF (unless otherwise noted); typical values are at TJ = 25°C
| VOUT = 1.8 V, IOUT = 10 mA |
| VOUT = 1.8 V |
| VOUT = 1.8 V |
| VOUT = 1.8 V |
| VOUT = 1.8 V |
| VIN – VOUT = 0.5 V |
| VOUT = 1.8 V, IOUT = 10 mA, CIN = COUT = 1 µF |
| VOUT = 1.8 V, tR = tF = 1 µs |
| VOUT = 1.8 V, tR = tF = 1 µs |
| VOUT = 1.8 V, IOUT = 1 mA, slew rate = 1 V/µs |
| VOUT = 1.8 V, IOUT = 1 mA |
| VOUT = 1.8 V, IOUT = 300 mA |
| IOUT = 300 mA |
| VOUT = 1.8 V |
| VOUT = 1.8 V |
| VOUT = 1.8 V |
| VOUT = 1.8 V |
| VOUT = 1.8 V | ||
| VOUT = 1.8 V, tR = tF = 1 µs |
| VOUT = 1.8 V, IOUT = 300 mA, slew rate = 1 V/µs |
| VOUT = 1.8 V, IOUT = 300 mA, slew rate = 1 V/µs |