4 修訂歷史記錄

Changes from D Revision (March 2019) to E Revision

• 將 THVD1451 從產品預覽 更改為生產 數據Go

Changes from C Revision (February 2019) to D Revision

• 將 THVD1410 從產品預覽 更改為生產數據Go

Changes from B Revision (December 2018) to C Revision

• 將 THVD1452 從產品預覽 更改為生產 數據Go

Changes from A Revision (May 2018) to B Revision

• 添加特性：“差分輸出超過 2.1 V...”Go
• 更改特性：將“±18kV IEC 61000-4-2 氣隙放電”更改為：“±25kV IEC 61000-4-2 氣隙放電”Go
• 添加 THVD1451 的 SOIC (8) 封裝Go
• Added Thermal Pad to the THVD1450 DRB packageGo
• Added Thermal Pad to the THVD1451 DRB packageGo
• Changed all pins HBM ESD rating from 4 kV to 8 kVGo
• Changed IEC ESD air-gap discharge rating from 18 kV to 25 kVGo
• Changed THVD1410 power dissipation numbersGo
• Changed THVD1410 driver t_r, t_f TYP from 400 ns to 460 ns and MAX from 600 ns to 680 nsGo
• Changed THVD1410 receiver t_r, t_f TYP from 13 ns to 10 nsGo
• Changed THVD1410 receiver t_PHL, t_PLH TYP from 60 ns to 35 nsGo
• Added Typical Characteristics, THD1450DGo
• Added condition to Figure 8 to Figure 3Go
• Added Typical Characteristics, THD1410Go
• Changed A to A/Y and B to B/Z in Figure 20 to Figure 24Go
• Added 3rd paragraph to the Overview sectionGo

Changes from * Revision (November 2017) to A Revision

• 將文檔狀態從預告信息 更改為生產數據Go