ZHCSR19G December 2002 – September 2022 SN65HVD20 , SN65HVD21 , SN65HVD22 , SN65HVD23 , SN65HVD24
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Revision History
- 5 說(shuō)明（續(xù)）
- 6 Device Comparison
- 7 Pin Configuration and Functions
-
8 Specifications
- 8.1 Absolute Maximum Ratings
- 8.2 ESD Ratings
- 8.3 Recommended Operating Conditions
- 8.4 Thermal Information
- 8.5 Driver Electrical Characteristics
- 8.6 Receiver Electrical Characteristics
- 8.7 Driver Switching Characteristics
- 8.8 Receiver Switching Characteristics
- 8.9 Receiver Equalization Characteristics
- 8.10 Power Dissipation
- 8.11 Typical Characteristics
- 9 Parameter Measurement Information
- 10Detailed Description
- 11Application and Implementation
- 12Power Supply Recommendations
- 13Layout
- 14Device and Documentation Support
- 15Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- D|8
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
14.4 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |