ZHCSOE2C November 2005 – July 2021 SN65C3221E , SN75C3221E
PRODUCTION DATA
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 ESD Ratings - IEC Specifications
- 7.4 Recommended Operating Conditions
- 7.5 Thermal Information
- 7.6 Electrical Characteristics
- 7.7 Driver Section: Electrical Characteristics
- 7.8 Switching Characteristics: Driver
- 7.9 Receiver Section: Electrical Characteristics
- 7.10 Switching Characteristics: Receiver
- 7.11 Auto-powerdown Section: Electrical Characteristics
- 7.12 Switching Characteristics: Auto-powerdown
- 8 Parameter Measurement Information
- 9 Detailed Description
- 10Application and Implementation
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
11.4 Electrostatic Discharge Caution
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |