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ZHCSFU9A November 2016 – November 2017 MUX506 , MUX507

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DW|28
- MPDS175A
PW|28
- MPDS364

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

DW|28
- QFND317C

訂購信息

6.6 Electrical Characteristics: Single Supply

at T_A = 25°C, V_DD = 12 V, and V_SS = 0 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
ANALOG SWITCH
	Analog signal range	T_A = –40°C to +125°C			V_SS		V_DD	V
R_ON	On-resistance	V_S = 10 V, I_S = –1 mA				235	340	Ω
			T_A = –40°C to +85°C				390
			T_A = –40°C to +125°C				430
ΔR_ON	On-resistance match	V_S = 10 V, I_S = –1 mA				7	20	Ω
			T_A = –40°C to +85°C				35
			T_A = –40°C to +125°C				40
	On-resistance drift	V_S = 10 V				1.07		Ω/°C
I_S(OFF)	Input leakage current	Switch state is off, V_S = 1 V and V_D = 10 V, or V_S = 10 V and V_D = 1 V⁽¹⁾			–1	0.001	1	nA
			T_A = –40°C to +85°C		–10		10
			T_A = –40°C to +125°C		–25		25
I_D(OFF)	Output off leakage current	Switch state is off, V_S = 1 V and V_D = 10 V, or V_S = 10 V and V_D = 1 V⁽¹⁾			–1	0.01	1	nA
			T_A = –40°C to +85°C		–10		10
			T_A = –40°C to +125°C		–25		25
I_D(ON)	Output on leakage current	Switch state is on, V_D = 1 V and 10 V, V_S = floating			–1	0.02	1	nA
			T_A = –40°C to +85°C		–10		10
			T_A = –40°C to +125°C		–50		50
LOGIC INPUT
V_IH	Logic voltage high				2.0			V
V_IL	Logic voltage low						0.8	V
I_D	Input current						0.1	µA
SWITCH DYNAMIC CHARACTERISTICS⁽²⁾
t_ON	Enable turn-on time	V_S = 8 V, R_L = 300 Ω, C_L= 35 pF				90	145	ns
			T_A = –40°C to +85°C				145
			T_A = –40°C to +125°C				149
t_OFF	Enable turn-off time	V_S = 8 V, R_L = 300 Ω, C_L= 35 pF				66	84	ns
			T_A = –40°C to +85°C				94
			T_A = –40°C to +125°C				102
t_t	Transition time	V_S = 8 V, C_L= 35 pF				107	147	ns
		V_S = 8 V, R_L = 300 Ω, C_L= 35 pF,	T_A = –40°C to +85°C				153
		V_S = 8 V, R_L = 300 Ω, C_L= 35 pF,	T_A = –40°C to +125°C				155
t_BBM	Break-before-make time delay	V_S = 8 V, R_L = 300 Ω, C_L= 35 pF, T_A = –40°C to +125°C			30	54		ns
Q_J	Charge injection	C_L = 1 nF, R_S = 0 Ω	V_S = 6 V	TSSOP package		0.12		pC
			V_S = 6 V	SOIC package		0.38
			V_S = 0 V to 12 V	TSSOP		±0.17
			V_S = 0 V to 12 V	SOIC package		±0.48
	Off-isolation	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channel to D, DA, DB	TSSOP package		–97		dB
			Nonadjacent channel to D, DA, DB	SOIC package		–94
			Adjacent channel to D, DA, DB	TSSOP package		–94
			Adjacent channel to D, DA, DB	SOIC package		–88
	Channel-to-channel crosstalk	R_L = 50 Ω, V_S = 1 V_RMS, f = 1 MHz	Nonadjacent channels	TSSOP package		–100		dB
			Nonadjacent channels	SOIC package		–99
			Adjacent channels	TSSOP		-88
			Adjacent channels	SOIC package		-83
C_S(OFF)	Input off-capacitance	f = 1 MHz, V_S = 6 V				2.4	3.4	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 6 V	MUX506			14	15.4	pF
C_D(OFF)	Output off-capacitance	f = 1 MHz, V_S = 6 V	MUX507			7.8	9.1	pF
C_S(ON), C_D(ON)	Output on-capacitance	f = 1 MHz, V_S = 6 V	MUX506			16.2	18	pF
C_S(ON), C_D(ON)	Output on-capacitance	f = 1 MHz, V_S = 6 V	MUX507			9.9	11.6	pF
POWER SUPPLY
	V_DD supply current	All V_A = 0 V or 3.3 V, V_S= 0 V, V_EN = 3.3 V				41	59	µA
			T_A = –40°C to +85°C				62
			T_A = –40°C to +125°C				83
	V_SS supply current	All V_A = 0 V or 3.3 V, V_S = 0 V, V_EN = 3.3 V				22	34	µA
			T_A = –40°C to +85°C				37
			T_A = –40°C to +125°C				57

(1) When V_S is 1 V, V_D is 10 V, and vice versa.

(2) Specified by design, not subject to production test.