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ZHCSSD8F april 2000 – july 2023 LP2980-ADJ

PRODUCTION DATA

封裝選項

機械數據 (封裝 | 引腳)

DBV|5
- MPDS018T

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6.5 Electrical Characteristics

specified at T_J = 25°C, V_IN = V_OUT(nom) + 1.0 V or VIN = 2.5 V (whichever is greater), I_OUT = 1 mA, V_ON/OFF = 2 V, C_IN = 1.0 μF, and C_OUT = 2.2 μF (unless otherwise noted)

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_REF	Reference Voltage	Legacy Chip	I_L = 1mA	1.213	1.225	1.237	V
		New Chip	I_L = 1mA	1.194	1.2	1.206
		Legacy Chip	1 mA < I_L < 50 mA, V_OUT + 1 ≤ V_IN ≤ 16V, T_J = 25°C	1.206	1.225	1.243
		New Chip	1 mA < I_L < 50 mA, V_OUT + 1 ≤ V_IN ≤ 16V, T_J = 25°C	1.1928	1.2	1.206
		Legacy Chip	1 mA < I_L < 50 mA, V_OUT + 1 ≤ V_IN ≤ 16V, –40°C ≤ T_J≤ 125°C	1.182	1.225	1.268
		New Chip		1.1892	1.2	1.2108
ΔV_REF/ΔV_IN	Reference Voltage Line Regulation	Legacy Chip	2.5V ≤ VIN ≤ 16V, T_J= 25°C		3.0	6.0	mV
		New Chip	2.5V ≤ VIN ≤ 16V, T_J= 25°C		–0.5	4.0
		Legacy Chip	2.5V ≤ VIN ≤ 16V, –40°C ≤ T_J≤ 125°C			15.0
		New Chip	2.5V ≤ VIN ≤ 16V, –40°C ≤ T_J≤ 125°C			4.25
V_IN - V_OUT	Dropout voltage	Legacy Chip	I_L = 0mA		1	3	mV
		New Chip	I_L = 0mA		1	3.5
		Legacy Chip	I_L = 0mA, –40°C ≤ T_J≤ 125°C			5
		New Chip	I_L = 0mA, –40°C ≤ T_J≤ 125°C			5.5
		Legacy Chip	I_L = 1mA		7	10
		New Chip	I_L = 1mA		10.5	15.5
		Legacy Chip	I_L = 1mA, –40°C ≤ T_J≤ 125°C			15
		New Chip	I_L = 1mA, –40°C ≤ T_J≤ 125°C			18.5
		Legacy Chip	I_L = 10mA		40	60
		New Chip	I_L = 10mA		95	115
		Legacy Chip	I_L = 10mA, –40°C ≤ T_J≤ 125°C			90
		New Chip	I_L = 10mA, –40°C ≤ T_J≤ 125°C			148
		Legacy Chip	I_L = 50mA		120	150
		New Chip	I_L = 50mA		120	145
		Legacy Chip	I_L = 50mA, –40°C ≤ T_J≤ 125°C			225
		New Chip	I_L = 50mA, –40°C ≤ T_J≤ 125°C			184
I_GND	Ground Pin Current	Legacy Chip	I_L = 0mA		60	95	μA
		New Chip	I_L = 0mA		55	70
		Legacy Chip	I_L = 0mA, –40°C ≤ T_J≤ 125°C			125
		New Chip	I_L = 0mA, –40°C ≤ T_J≤ 125°C			90
		Legacy Chip	I_L = 1mA		80	110
		New Chip	I_L = 1mA		70	82
		Legacy Chip	I_L = 1mA, –40°C ≤ T_J≤ 125°C			170
		New Chip	I_L = 1mA, –40°C ≤ T_J≤ 125°C			105
		Legacy Chip	I_L = 10mA		120	220
		New Chip	I_L = 10mA		150	188
		Legacy Chip	I_L = 10mA, –40°C ≤ T_J≤ 125°C			460
		New Chip	I_L = 10mA, –40°C ≤ T_J≤ 125°C			220
		Legacy Chip	I_L = 50mA		320	600
		New Chip	I_L = 50mA		350	420
		Legacy Chip	I_L = 50mA, –40°C ≤ T_J≤ 125°C			1200
		New Chip	I_L = 50mA, –40°C ≤ T_J≤ 125°C			600
		Legacy Chip	V_ON/OFF < 0.18V, V_IN ≤ 4.3V, –40°C ≤ T_J≤ 125°C		0.01	1
		New Chip	V_ON/OFF < 0.18V, V_IN ≤ 4.3V, –40°C ≤ T_J≤ 125°C		0.2	0.8
		New Chip	V_ON/OFF < 0.18V, V_IN = 16V, –40°C ≤ T_J≤ 125°C			2.5
I_ADJ	ADJ Pin Bias Current	Legacy Chip	1 mA ≤ I_L ≤ 50 mA		150	350	nA
I_ADJ	ADJ Pin Bias Current	New Chip	1 mA ≤ I_L ≤ 50 mA		0.35	30	nA
V_UVLO+	Rising bias supply UVLO	New Chip	V_IN rising, –40°C ≤ T_J ≤ 125°C		2.2	2.4	V
V_UVLO-	Falling bias supply UVLO		V_IN falling, –40°C ≤ T_J ≤ 125°C	1.9	2.07
V_UVLO(HYST)	UVLO hysteresis		–40°C ≤ T_J ≤ 125°C		0.130
V_ON/OFF	ON/OFF input voltage	Legacy Chip	High = O/P ON	1.6	1.4		V
		Legacy Chip	Low = O/P OFF		0.55	0.18
		New Chip	High = O/P ON	1.6	0.82
		New Chip	Low = O/P OFF		0.7	0.18
I_ON/OFF	ON/OFF input Current	Legacy Chip	V_ON/OFF = 0		0.01	–1	μA
		Legacy Chip	V_ON/OFF = 5V		5	15
		New Chip	V_ON/OFF = 0		–0.35	–0.7
		New Chip	V_ON/OFF = 5V		0.008	0.5
I_O(PK)	Peak Output Current	Legacy Chip	V_OUT ≥ V_O(NOM) – 5%	100	150		mA
I_O(PK)	Peak Output Current	New Chip	V_OUT ≥ V_O(NOM) – 5%	130	150
I_O(MAX)	Short Circuit Current	Legacy Chip	R_L = 0 (Steady State)		150
I_O(MAX)	Short Circuit Current	New Chip	R_L = 0 (Steady State)		160
e_n	Output Noise Voltage (RMS)	Legacy Chip	BW = 300 Hz to 50 kHz, C_OUT = 10μF		160		μV
		New Chip	BW = 300 Hz to 50 kHz, C_OUT = 2.2μF		160
		New Chip	BW = 10 Hz to 100 kHz, C_OUT = 2.2μF		220
ΔV_OUT/ΔV_IN	Ripple Rejection	Legacy Chip	f = 1 kHz, C_OUT = 10μF		68		dB
		New Chip	f = 1 kHz, C_OUT = 2.2μF		68
		New Chip	f = 100 kHz, C_OUT = 2.2μF		45
T_sd(shutdown)	Thermal shutdown threshold	New Chip	Shutdown, temperature increasing		170		°C
T_sd(reset)	Thermal shutdown threshold	New Chip	Reset, temperature decreasing		150		°C