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ZHCSUE4 August 2024 LMR51606-Q1 , LMR51610-Q1

PRODUCTION DATA

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DBV|6
- MPDS026Q

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcsue4_oa

6.5 Electrical Characteristics

Limits apply over operating junction temperature (T_J) range of –40°C to +150°C, unless otherwise stated. Minimum and Maximum limits⁽¹⁾ are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: V_IN = 4V to 65V.

PARAMETER	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
I_Q(VIN)	VIN quiescent current ⁽³⁾	V_EN= 3V, FPWM operation		420		μA
I_Q(VIN)	VIN quiescent current (non-switching)⁽²⁾	V_EN= 3V, V_FB= 1V, PFM operation		26.5	40	μA
I_SD(VIN)	VIN shutdown supply current	V_EN = 0V		0.8	3	μA
UVLO
V_{IN_}_UVLO(R)	V_IN UVLO rising threshold	V_IN rising		3.82	4	V
V_{IN_}_UVLO(F)	V_IN UVLO falling threshold	V_IN falling	3.4	3.56		V
V_{IN_}_UVLO(H)	V_IN UVLO hysteresis			0.25		V
ENABLE
V_EN(R)	EN voltage rising threshold	EN rising, enable switching	1.1	1.227	1.36	V
V_EN(F)	EN voltage falling threshold	EN falling, disable switching	0.85	1.0	1.15	V
I_EN(P2)	EN pin sourcing current post EN rising threshold	V_EN= 3V		10	50	nA
REFERENCE VOLTAGE
V_FB	Reference voltage		0.792	0.8	0.808	V
I_FB(LKG)	FB input leakage current	V_FB= 0.8V		0.2		nA
SWITCHING FREQUENCY
f_SW(CCM)	Switching frequency, CCM operation		360	400	440	KHz
STARTUP
t_SS	Internal fixed soft-start time			2.3		ms
POWER STAGE
R_DSON(HS)	High-side MOSFET on-resistance	V_IN = 12V, T_J = 25°C		0.7		Ω
R_DSON(LS)	Low-side MOSFET on-resistance	V_IN = 12V, T_J = 25°C		0.36		Ω
t_{ON_MIN}	Minimum ON pulse width	V_IN = 12V, I_OUT = 0.1A		80		ns
t_{ON_MAX}	Maximum ON pulse width	V_IN = 12V, I_OUT= 0.5A		5		μs
t_{OFF_MIN}	Minimum OFF pulse width	V_IN = 5V		200		ns
OVERCURRENT PROTECTION
I_{HS_PK(OC)}	High-side peak current limit	LMR51610-Q1	1.30	1.6	1.90	A
I_{LS_V(OC)}	Low-side valley current limit	LMR51610-Q1	0.7	1.1	1.3	A
I_LS(NOC)	Low-side negative current limit	LMR51610-Q1 FPWM Only		–0.66		A
I_{HS_PK(OC)}	High-side peak current limit	LMR51606-Q1	0.8	1.1	1.4	A
I_{LS_V(OC)}	Low-side valley current limit	LMR51606-Q1	0.62	0.8	0.98	A
I_LS(NOC)	Low-side negative current limit	LMR51606-Q1 FPWM Only		–0.36		A
I_ZC	Zero-cross detection current threshold ⁽³⁾			0		A
THERMAL SHUTDOWN
T_J(SD)	Thermal shutdown threshold ⁽³⁾	Junction temperature rising		165		°C
T_J(HYS)	Thermal shutdown hysteresis ⁽³⁾			20		°C

(1) MIN and MAX limits are 100% production tested at 25℃. Limits over the operating temperature range verified through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

(2) This is the current used by the device open loop, it does not represent the total input current of the system when in regulation.

(3) Not production tested. Specified by correlation by design.