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ZHCSCW7D October 2014 – February 2018 LMH5401

PRODUCTION DATA.

封裝選項

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RMS|14
- MPQF401

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.5 Electrical Characteristics: V_S = 5 V

at T_A = 25°C, VS+ = 2.5 V, VS– = –2.5 V, V_CM = 0 V, R_L = 200-Ω differential, G = 12 dB (4 V/V), single-ended input, differential output, and R_S = 50 Ω, (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT	TEST LEVEL⁽²⁾
AC PERFORMANCE
GBP	Gain bandwidth product	G = 30 dB (32 V/V)			8		GHz	C
SSBW	Small-signal, –3-dB bandwidth	V_O = 200 mV_PP			6.2		GHz	C
LSBW	Large-signal, –3-dB bandwidth	V_O = 2 V_PP			4.8		GHz	C
	Bandwidth for 0.1-dB flatness	V_O = 2 V_PP			800		MHz	C
SR	Slew rate	2-V step			17500		V/µs	C
	Rise and fall time	1-V step, 10% to 90%			80		ps	C
	Overdrive recovery	Overdrive = ±0.5 V			300		ps	C
	Output balance error	f = 1 GHz			47		dBc	C
z_o	Output impedance	At DC, differential		16	20	24	Ω	A
	0.1% settling time	2 V, R_L = 200 Ω			1		ns	C
HD2	Second-order harmonic distortion	f = 100 MHz, V_O = 2 V_PP			–99		dBc	C
		f = 200 MHz, V_O = 2 V_PP			–92		dBc	C
		f = 500 MHz, V_O = 2 V_PP			–75		dBc	C
		f = 1 GHz, V_O = 2 V_PP			–56		dBc	C
HD3	Third-order harmonic distortion	f = 100 MHz, V_O = 2 V_PP			–94		dBc	C
		f = 200 MHz, V_O = 2 V_PP			–90		dBc	C
		f = 500 MHz, V_O = 2 V_PP			–75		dBc	C
		f = 1 GHz, V_O = 2 V_PP			–58		dBc	C
IMD3	Third-order intermodulation	f = 100 MHz, V_O = 1 V_PP per tone			–95		dBc	C
		f = 200 MHz, V_O = 1 V_PP per tone			–91		dBc	C
		f = 500 MHz, V_O = 1 V_PP per tone			–75		dBc	C
		f = 1 GHz, V_O = 1 V_PP per tone			–60		dBc	C
IMD2	Second-order intermodulation	f = 100 MHz, V_O = 1 V_PP per tone			–95		dBc	C
		f = 200 MHz, V_O = 1 V_PP per tone			–89		dBc	C
		f = 500 MHz, V_O = 1 V_PP per tone			–71		dBc	C
		f = 1 GHz, V_O = 1 V_PP per tone			–52		dBc	C
NOISE PERFORMANCE
e_n	Input voltage noise density				1.25		nV/√Hz	C
i_n	Input noise current				3.5		pA/√Hz	C
NF	Noise figure	R_S = 50 Ω, SE-DE, 200 MHz (see Figure 59)			9.6		dB	C
INPUT
V_OS	Input offset voltage				±0.5	±5	mV	A
I_B	Input bias current				70	150	µA	A
I_OS	Input offset current				±1	±10	µA	A
	Differential resistance	Open-loop			4600		Ω	C
V_ICL	Input common-mode low voltage				VS–	(VS–) + 0.41	V	A
V_ICH	Input common-mode high voltage			(VS+) – 1.41	(VS+) – 1.2		V	A
CMRR	Common-mode rejection ratio	Differential, 1-V_PP input shift, DC			72		dBc	C
OUTPUT
V_OCRH	Output voltage range, high	Measured single-ended	T_A = 25°C	(VS+) – 1.3	(VS+) – 1.1		V	A
V_OCRH	Output voltage range, high	Measured single-ended	T_A = –40°C to +85°C		(VS+) – 1.2		V	C
V_OCRL	Output voltage range, low	Measured single-ended	T_A = 25°C	(VS–) + 1.3	(VS–) + 1.1		V	A
V_OCRL	Output voltage range, low	Measured single-ended	T_A = –40°C to +85°C		(VS–) + 1.2		V	C
V_OD	Differential output voltage swing	Differential			5.8		V_PP	C
I_OD	Differential output current	V_O = 0 V⁽³⁾		40	50		mA	A
POWER SUPPLY
V_S	Supply voltage			3.15		5.25	V	A
PSRR	Power-supply rejection ratio	VS–		–50	–80		dB	A
PSRR	Power-supply rejection ratio	VS+		–60	–82		dB	A
I_Q	Quiescent current	Power down = 0		50	55	62	mA	A
I_Q	Quiescent current	Power down = 1		1	3	6	mA	A
OUTPUT COMMON-MODE CONTROL PIN (V_CM)
SSBW	Small-signal bandwidth	V_OCM = 100 mV_PP			1.2		GHz	C
	V_CM slew rate	V_OCM = 500 mV_PP			2900		V/µs	C
	V_CM voltage range low	Differential gain shift < 1 dB			(VS–) + 1.4	(VS–) + 2	V	A
	V_CM voltage range high	Differential gain shift < 1 dB		(VS+) – 2	(VS+) – 1.4		V	A
	V_CM gain	V_CM = 0 V		0.98	1	1.01	V/V	A
	V_OCM output common-mode offset from V_CM input voltage	V_CM = 0 V			–27		mV	C
V_OCM	Common-mode offset voltage	Output-referred			0.4		mV	A
POWER DOWN (PD PIN)
V_T	Enable or disable voltage threshold	Device powers on below 0.8 V Device powers down above 1.2 V		0.9	1.1	1.2	V	A
	Power down quiescent current			1	3	6	mA	A
	Power down bias current	Power down = 2.5 V			10	±100	µA	C
	Turnon time delay	Time to V_O = 90% of final value			10		ns	C
	Turnoff time delay	Time to V_O = 10% of original value			10		ns	C

(1) The input resistance and corresponding gain are obtained with the external resistance added.

(2) Test levels: (A) 100% tested at 25°C. Overtemperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information.

(3) This test shorts the outputs to ground (midsupply) then sources or sinks 60 mA and measures the deviation from the initial condition.

封裝選項

機(jī)械數(shù)據(jù) (封裝 | 引腳)

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.5 Electrical Characteristics: VS = 5 V

6.5 Electrical Characteristics: V_S = 5 V