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SNVS790F January 2012 – November 2015 LM5114

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

NGG|6
- MPDS395
DBV|6
- MPDS026Q

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
VDD to VSS	−0.3	14	V
IN, INB to VSS	−0.3	14	V
N_OUT to VSS	−0.3	VDD + 0.3	V
P_OUT to VSS	−0.3	VDD + 0.3	V
Junction temperature		150	°C
Storage temperature, T_stg	−55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
VDD		4		12.6	V
Junction temperature		40		125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM5114		UNIT
		DBV (SOT-23)	NGG (WSON)
		6 PINS	6 PINS
R_θJA	Junction-to-ambient thermal resistance	108.1	51.0	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	54.2	47.0	°C/W
R_θJB	Junction-to-board thermal resistance	24.9	25.3	°C/W
ψ_JT	Junction-to-top characterization parameter	1.3	0.6	°C/W
ψ_JB	Junction-to-board characterization parameter	23.9	25.4	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	NA	5.8	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only. Unless otherwise specified, V_DD = 12 V ⁽¹⁾.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SUPPLY
V_DD	VDD operating voltage	(T_J) range of –40°C to 125°C		4.0		12.6	V
UVLO	VDD undervoltage lockout	VDD Rising	T_J = 25°C		3.6		V
	VDD undervoltage lockout	VDD Rising	(T_J) range of –40°C to 125°C	3.25		4.00	V
	VDD undervoltage lockout hysteresis				0.4		V
I_DD	VDD quiescent current	IN = INB = VDD	T_J = 25°C		0.95		mA
I_DD	VDD quiescent current	IN = INB = VDD	(T_J) range of –40°C to 125°C			1.9	mA
N-CHANNEL OUTPUT
R_ON-N (SOT-23-6)	Driver output resistance – pulling down	VDD = 10 V, I_N-OUT = –100 mA	T_J = 25°C		0.23	0.26	Ω
		VDD = 10 V, I_N-OUT = –100 mA	T_J = 125°C		0.38	0.43	Ω
		VDD = 4.5 V, I_N-OUT = –100 mA	T_J = 25°C		0.24	0.28	Ω
		VDD = 4.5 V, I_N-OUT = –100 mA	TJ = 125°C		0.40	0.47	Ω
R_ON-N (WSON-6)	Driver output resistance – pulling down	VDD = 10 V, I_N-OUT = –100 mA	T_J = 25°C		0.31	0.34	Ω
		VDD = 10 V, I_N-OUT = –100 mA	T_J = 125°C		0.46	0.51	Ω
		VDD = 4.5 V, I_N-OUT = –100 mA	T_J = 25°C		0.32	0.36	Ω
		VDD = 4.5 V, I_N-OUT = –100 mA	T_J = 125°C		0.48	0.55	Ω
	Power-off pulldown resistance	VDD = 0 V, I_N-OUT = –10 mA			3.3	10	Ω
	Power-off pulldown clamp voltage	VDD = 0 V, I_N-OUT = –10 mA			0.85	1.0	V
I_LK-N	Output leakage current	N_OUT = VDD	T_J = 25°C		6.85		µA
I_LK-N	Output leakage current	N_OUT = VDD	(T_J) range of –40°C to 125°C			20	µA
I_PK-N	Peak sink current	C_L = 10,000 pF			7.6		A
P-CHANNEL OUTPUT
R_ON-P (SOT-23-6)	Driver output resistance – pulling up	VDD = 10 V, I_P-OUT = 50 mA	T_J = 25°C		2.00	3.00	Ω
		VDD = 10 V, I_P-OUT = 50 mA	T_J = 125°C		2.85	4.30	Ω
		VDD = 4.5 V, I_P-OUT = 50 mA	T_J = 25°C		2.20	3.30	Ω
		VDD = 4.5 V, I_P-OUT = 50 mA	T_J = 125°C		3.10	4.70	Ω
R_ON-P (WSON-6)	Driver output resistance – pulling up	VDD = 10 V, I_P-OUT = 50 mA	T_J = 25°C		2.08	3.08	Ω
		VDD = 10 V, I_P-OUT = 50 mA	T_J = 125°C		2.93	4.38	Ω
		VDD = 4.5 V, I_P-OUT = 50 mA	T_J = 25°C		2.28	3.38	Ω
		VDD = 4.5 V, I_P-OUT = 50 mA	T_J = 125°C		3.18	4.78	Ω
I_LK-P	Output leakage current	P_OUT = 0	T_J = 25°C		0.001		µA
I_LK-P	Output leakage current	P_OUT = 0	(T_J) range of –40°C to 125°C			10	µA
I_PK-P	Peak source current	CL = 10,000 pF			1.3		A
LOGIC INPUT
V_IH	Logic 1 input voltage	LM5114A	(T_J) range of –40°C to 125°C	0.67 × VDD			V
V_IH	Logic 1 input voltage	LM5114B		2.4			V
V_IL	Logic 0 input voltage	LM5114A	(T_J) range of –40°C to 125°C			0.33 × VDD	V
V_IL	Logic 0 input voltage	LM5114B				0.8	V
LOGIC INPUT (continued)
V_HYS	Logic-input hysteresis	LM5114A			1.6		V
	Logic-input hysteresis	LM5114B			0.68		V
	Logic-input current	INB = VDD or 0	T_J = 25°C		0.001		µA
	Logic-input current	INB = VDD or 0	(T_J) range of –40°C to 125°C			10	µA
C_IN	Input capacitance				2.5		pF

(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using statistical quality control (SQC) methods. Limits are used to calculate TI’s average outgoing quality level (AOQL).

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
POWER SUPPLY
UVLO	VDD undervoltage lockout to output delay time	VDD Rising				300		ns
SWITCHING CHARACTERISTICS FOR VDD = 10 V
t_R	Rise time	C_L = 1000 pF				8		ns
		C_L = 5000 pF				45		ns
		C_L = 10,000 pF				82		ns
t_F	Fall time	C_L = 1000 pF				3.2		ns
		C_L = 5000 pF				7.5		ns
		C_L = 10,000 pF				12.5		ns
t_D-ON	Turnon propagation delay	C_L = 1000 pF	LM5114A	T_J = 25°C		12		ns
			LM5114A	(T_J) range of –40°C to 125°C	5		30
			LM5114B	T_J = 25°C		12
			LM5114B	(T_J) range of –40°C to 125°C	6		25
t_D-OFF	Turnoff propagation delay	C_L = 1000 pF	LM5114A	T_J = 25°C		12		ns
			LM5114A	(T_J) range of –40°C to 125°C	5		30
			LM5114B	T_J = 25°C		12
			LM5114B	(T_J) range of –40°C to 125°C	6		25
Break-before-make Time						2.5		ns
SWITCHING CHARACTERISTICS FOR VDD = 4.5 V
t_R	Rise time	C_L = 1000 pF				12		ns
		C_L = 5000 pF				41		ns
		C_L = 10,000 pF				74		ns
t_F	Fall time	C_L = 1000 pF				3.0		ns
		C_L = 5000 pF				7.0		ns
		C_L = 10,000 pF				11.3		ns
t_D-ON	Turnon propagation delay	C_L = 1000 pF	LM5114A	T_J = 25°C			36	ns
			LM5114A	(T_J) range of –40°C to 125°C	5		17
			LM5114B	T_J = 25°C			27
			LM5114B	(T_J) range of –40°C to 125°C	8		14
SWITCHING CHARACTERISTICS FOR VDD = 4.5 V (continued)
t_D-OFF	Turnoff propagation delay	C_L = 1000 pF	LM5114A	T_J = 25°C			36	ns
			LM5114A	(T_J) range of –40°C to 125°C	5		17
			LM5114B	T_J = 25°C			27
			LM5114B	(T_J) range of –40°C to 125°C	8		14
Break-before-make time						4.2		ns